中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

15 records (took 0.013 seconds)

    PROBE, A SYSTEM AND A METHOD FOR ANALYSIS OF A LIQUID IN A MIXTURE OF THE LIQUID AND SOLID SUBSTANCE
    1.
    发明公开
    PROBE, A SYSTEM AND A METHOD FOR ANALYSIS OF A LIQUID IN A MIXTURE OF THE LIQUID AND SOLID SUBSTANCE 审中-公开

    公开(公告)号：US20240035964A1

    公开(公告)日：2024-02-01

    申请号：US18224135

    申请日：2023-07-20

    Applicant: Stichting Imec Nederland

    Inventor： Mark ZENTILE ,  Xu Zhang ,  Peter Offermans ,  David Young ,  Arjan Tibbe

    IPC: G01N21/41

    CPC classification number: G01N21/4133 ,  G01N2201/08

    Abstract: According to an aspect of the present inventive concept there is provided a probe for analysis of a liquid in a mixture of the liquid and solid substance. The probe comprises: a tube comprising a sample end configured to be inserted into the mixture; a cap configured to come into contact with the mixture at the sample end, the cap comprising one or more openings configured for allowing passage of the liquid therethrough, and for preventing passage of the solid substance therethrough; and an optical measurement head arranged in the tube and configured to come into contact with the liquid having passed the one or more openings, wherein the optical measurement head is configured to collect measurement information for analysis of the liquid.

    SENSOR FOR SENSING THE PRESENCE OF AT LEAST ONE FLUIDUM
    2.
    发明申请
    SENSOR FOR SENSING THE PRESENCE OF AT LEAST ONE FLUIDUM 有权
    传感器用于感测至少一个流体的存在

    公开(公告)号：US20130334061A1

    公开(公告)日：2013-12-19

    申请号：US13909937

    申请日：2013-06-04

    Applicant: Stichting IMEC Nederland

    Inventor： Peter Offermans ,  Roman Vitushinsky ,  Mercedes Crego Calama ,  Sywert Brongersma

    IPC: G01N27/414

    CPC classification number: G01N27/4146 ,  G01N27/4143

    Abstract: A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

    Abstract translation: 公开了一种用于感测在邻近传感器的空间中存在至少一个流体的传感器。 在一个方面，传感器具有二维电子气（2DEG）层堆叠，覆盖至少部分2DEG层堆叠的栅电极，用于静电控制2DEG层堆叠中的2DEG的电子密度，以及源极和漏极 电极与2DEG层堆叠接触以电接触2DEG，其中检测开口设置在栅电极和2DEG层堆之间，并且其中检测开口通过检测开口入口与空间连通，使得流体的分子可以移动 从相邻的空间通过检测开口入口进入检测开口，在那里它们可以可测量地改变2DEG的电特性。

    TWO-DIMENSIONAL ELECTRON GAS SENSOR AND METHODS FOR MAKING AND USING THE SENSOR
    4.
    发明申请
    TWO-DIMENSIONAL ELECTRON GAS SENSOR AND METHODS FOR MAKING AND USING THE SENSOR 有权
    二维电子气体传感器及其制造和使用传感器的方法

    公开(公告)号：US20140175516A1

    公开(公告)日：2014-06-26

    申请号：US14133373

    申请日：2013-12-18

    Applicant: Stichting IMEC Nederland

    Inventor： Roman Vitushinsky ,  Peter Offermans ,  Mercedes Crego Calama ,  Sywert Brongersma

    IPC: G01N27/414 ,  H01L29/66 ,  H01L29/778

    CPC classification number: G01N27/4141 ,  H01L29/66431 ,  H01L29/778

    Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG. The 2DEG layer stack of the sensor comprises a contact surface contacting the space and provided to contact molecules of the fluidum which is desired to be detected, and the gate of the sensor comprises a doped semiconductor bottom layer of the 2DEG layer stack in electrical contact with at least one gate electrode, where the doped semiconductor bottom layer being located at a side of the 2DEG layer stack opposing the contact surface.

    Abstract translation: 所公开的技术通常涉及传感器及其制造和使用方法，更具体地涉及被配置为感测至少一个流体的存在的传感器。 在一个方面，用于感测与传感器邻接的空间中的流体的传感器包括二维电子气（2DEG）层堆叠。 该传感器还包括位于与2DEG层堆叠的至少一部分相邻并且被配置为静电地控制2DEG层堆叠中的二维电子气（2DEG）的电子密度的栅极。 传感器还包括与2DEG层堆叠接触的源电极，用于电接触2DEG。 该传感器的2DEG层叠层包括与该空间相接触的接触表面，并提供给与期望被检测的流体的分子接触，并且该传感器的栅极包括与2DEG层堆叠电子接触的掺杂半导体底层 至少一个栅电极，其中掺杂半导体底层位于与接触表面相对的2DEG层堆叠的一侧。

    Chemical Sensor
    5.
    发明申请
    Chemical Sensor 有权
    化学传感器

    公开(公告)号：US20130111977A1

    公开(公告)日：2013-05-09

    申请号：US13666356

    申请日：2012-11-01

    Applicant: Stichting IMEC Nederland

    Inventor： Peter Offermans ,  Roman Vitushinsky ,  Mercedes Crego Calama ,  Sywert Brongersma

    IPC: H01L29/66 ,  G01N7/00 ,  H01L29/205

    CPC classification number: G01N27/128 ,  G01N27/129 ,  G01N33/0009 ,  G01N33/0027

    Abstract: The application describes methods and apparatus for chemical sensing, e.g. gas sensing, which have high sensitivity but low power operation. A sensor is described having a flexible membrane comprising a III/N heterojunction structure configured so as to form a two dimensional electron gas within said structure. A sensing material is disposed on at least part of the flexible membrane, the sensing material being sensitive to one or more target chemicals so as to undergo a change in physical properties in the presence of said one or more target chemicals. The sensing material is coupled to said heterojunction structure such that said change in physical properties of the sensing material imparts a change in stress within the heterojunction structure which modulates the resistivity of the two dimensional electron gas.

    Abstract translation: 本申请描述了用于化学感测的方法和装置，例如。 气敏，灵敏度高，功率低。 描述了具有柔性膜的传感器，该柔性膜包括III / N异质结结构，其被配置为在所述结构内形成二维电子气。 感测材料设置在柔性膜的至少一部分上，感测材料对一种或多种目标化学物质敏感，以便在所述一种或多种目标化学品的存在下经历物理性能的变化。 感测材料耦合到所述异质结结构，使得感测材料的物理性质的变化赋予了调制二维电子气体的电阻率的异质结结构内的应力变化。

    Device and Method for Dielectric Material Characterization
    6.
    发明公开
    Device and Method for Dielectric Material Characterization 审中-公开

    公开(公告)号：US20240035987A1

    公开(公告)日：2024-02-01

    申请号：US18362051

    申请日：2023-07-31

    Applicant: Stichting IMEC Nederland

    Inventor： Rahul Yadav ,  Peter Offermans ,  Jan Willem de Wit ,  Bas Boom

    IPC: G01N22/00 ,  G01N33/02 ,  H01P7/10

    CPC classification number: G01N22/00 ,  G01N33/025 ,  H01P7/10

    Abstract: A device for dielectric material characterization of a test sample is provided. The device comprises a resonator block comprising a groove at at least one side of the resonator block, wherein the groove comprises at least a first inclined surface and a second inclined surface and is configured to contact the test sample via the first inclined surface and/or the second inclined surface. In this regard, the resonator block is configured to generate a rotational electric field coupled between the first inclined surface and the second inclined surface of the groove and further to propagate the rotational electric field partially or fully through the test sample in order to perform dielectric material characterization of the test sample.

    CIRCUIT FOR OPTOELECTRONIC DOWN-CONVERSION OF THZ SIGNALS
    7.
    发明申请
    CIRCUIT FOR OPTOELECTRONIC DOWN-CONVERSION OF THZ SIGNALS 有权

    公开(公告)号：US20220077603A1

    公开(公告)日：2022-03-10

    申请号：US17466908

    申请日：2021-09-03

    Applicant: IMEC VZW ,  Stichting IMEC Nederland

    Inventor： Peter Offermans ,  Davide Guermandi ,  Ashwyn Srinivasan

    IPC: H01Q23/00 ,  H01Q9/28

    Abstract: A circuit for optoelectronic down-conversion of a terahertz, THz, signal comprises a first photodiode and a second photodiode configured to be excited by an optical beat signal. The photodiodes are coupled in series through a common antenna. The terminals of the antenna are coupled to form an output terminal and the antenna is configured to receive the terahertz, THz, signal. The photodiodes thereby, via the optical beat signal, respectively, down-convert the THz signal and generate a current comprising an intermediate frequency, IF, component and a direct current, DC, component. The respective generated currents are summed at the output terminal, thereby obtaining the IF components and cancelling the DC components.

    Two-dimensional electron gas sensor and methods for making and using the sensor
    9.
    发明授权
    Two-dimensional electron gas sensor and methods for making and using the sensor 有权
    二维电子气体传感器及制造和使用传感器的方法

    公开(公告)号：US09207203B2

    公开(公告)日：2015-12-08

    申请号：US14133373

    申请日：2013-12-18

    Applicant: Stichting IMEC Nederland

    Inventor： Roman Vitushinsky ,  Peter Offermans ,  Mercedes Crego Calama ,  Sywert Brongersma

    IPC: H01L29/778 ,  G01N27/414 ,  H01L29/66

    CPC classification number: G01N27/4141 ,  H01L29/66431 ,  H01L29/778

    Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG. The 2DEG layer stack of the sensor comprises a contact surface contacting the space and provided to contact molecules of the fluidum which is desired to be detected, and the gate of the sensor comprises a doped semiconductor bottom layer of the 2DEG layer stack in electrical contact with at least one gate electrode, where the doped semiconductor bottom layer being located at a side of the 2DEG layer stack opposing the contact surface.

    Abstract translation: 所公开的技术通常涉及传感器及其制造和使用方法，更具体地涉及被配置为感测至少一个流体的存在的传感器。 在一个方面，用于感测与传感器邻接的空间中的流体的传感器包括二维电子气（2DEG）层堆叠。 该传感器还包括位于与2DEG层堆叠的至少一部分相邻并且被配置为静电地控制2DEG层堆叠中的二维电子气（2DEG）的电子密度的栅极。 传感器还包括与2DEG层堆叠接触的源电极，用于电接触2DEG。 该传感器的2DEG层叠层包括与该空间相接触的接触表面，并提供给与期望被检测的流体的分子接触，并且该传感器的栅极包括与2DEG层堆叠电子接触的掺杂半导体底层 至少一个栅电极，其中掺杂半导体底层位于与接触表面相对的2DEG层堆叠的一侧。

    2DEG-BASED SENSOR AND DEVICE FOR ECG SENSING
    10.
    发明申请
    2DEG-BASED SENSOR AND DEVICE FOR ECG SENSING 有权
    基于2DEG的传感器和用于ECG感测的设备

    公开(公告)号：US20140323895A1

    公开(公告)日：2014-10-30

    申请号：US14265088

    申请日：2014-04-29

    Applicant: Stichting IMEC Nederland

    Inventor： Roman Vitushinsky ,  Peter Offermans

    IPC: A61B5/0408 ,  H01L27/088 ,  H01L29/423 ,  H01L29/778

    CPC classification number: A61B5/0408 ,  A61B5/02125 ,  A61B5/0452 ,  A61B5/6824 ,  G01N27/129 ,  G01N27/414 ,  H01L27/088 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/7786

    Abstract: The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor.

    Abstract translation: 所公开的技术通常涉及包括二维电子气体（2DEG）的传感器，更具体地涉及用于感测与心电图相关的信号的基于AlGaN / GaN 2DEG的传感器及其使用方法。 一方面，传感器包括在衬底上形成的衬底和GaN / AlGaN异质结结构，并被配置为在GaN / AlGaN异质结结构内形成二维电子气（2DEG）沟道。 传感器还包括连接到电气金属化和2DEG通道的欧姆接触，其中GaN / AlGaN异质结结构在欧姆接触之间形成凹陷。 传感器还包括形成在传感器的顶表面上的电介质层。

Patent Agency Ranking