公开(公告)号：US12216406B2

公开(公告)日：2025-02-04

申请号：US17623392

申请日：2020-06-25

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Masatoshi Kawakita ,  Kosuke Yoshihara

IPC: B05D1/00 ,  B05B12/04 ,  B05B13/02 ,  B05D1/40 ,  G03F7/16

Abstract: A coating method of supplying a treatment solution to a substrate and coating the substrate with the treatment solution by a spin coating method. The method includes mixing a solvent for the treatment solution lower in surface tension than the treatment solution into the treatment solution concurrently with a start of supply of the treatment solution or later than the start of the supply of the treatment solution, and then supplying the treatment solution to the substrate.

公开(公告)号：US11938511B2

公开(公告)日：2024-03-26

申请号：US17809947

申请日：2022-06-30

Applicant: Tokyo Electron Limited

Inventor： Masatoshi Kawakita ,  Yusaku Hashimoto ,  Kosuke Yoshihara

IPC: B05D1/00 ,  B05C5/02 ,  B05D3/10

CPC classification number: B05D1/005 ,  B05C5/02 ,  B05D3/10

Abstract: A coating method includes supplying a film forming liquid onto a center of a front surface of a substrate from a nozzle in a state that a distance between the front surface and the nozzle is maintained at a coating distance; rotating the substrate at a first rotation speed in a period during which the film forming liquid is supplied onto the front surface, to allow the film forming liquid to be diffused toward an edge of the substrate from an outer periphery of the nozzle; and rotating the substrate at a second rotation speed after the supplying of the film forming liquid is stopped, to allow the film forming liquid to be further diffused. The coating distance is set to allow the film forming liquid to be kept between the nozzle and the front surface when a discharge of the film forming liquid is stopped.

公开(公告)号：US20220323990A1

公开(公告)日：2022-10-13

申请号：US17809947

申请日：2022-06-30

Applicant: Tokyo Electron Limited

Inventor： Masatoshi Kawakita ,  Yusaku Hashimoto ,  Kosuke Yoshihara

IPC: B05D1/00 ,  B05D3/10 ,  B05C5/02

Abstract: A coating method includes supplying a film forming liquid onto a center of a front surface of a substrate from a nozzle in a state that a distance between the front surface and the nozzle is maintained at a coating distance; rotating the substrate at a first rotation speed in a period during which the film forming liquid is supplied onto the front surface, to allow the film forming liquid to be diffused toward an edge of the substrate from an outer periphery of the nozzle; and rotating the substrate at a second rotation speed after the supplying of the film forming liquid is stopped, to allow the film forming liquid to be further diffused. The coating distance is set to allow the film forming liquid to be kept between the nozzle and the front surface when a discharge of the film forming liquid is stopped.

公开(公告)号：US11065639B2

公开(公告)日：2021-07-20

申请号：US16468356

申请日：2017-11-24

Applicant: Tokyo Electron Limited

Inventor： Shogo Inaba ,  Kosuke Yoshihara ,  Shinichi Hatakeyama

IPC: B05C11/08 ,  B05C5/02 ,  B05D1/36 ,  B05D3/12 ,  B05D1/00 ,  H01L21/027

Abstract: A method for coating a top of a substrate with a coating solution includes supplying, before a solution film of the coating solution formed on the substrate dries, a solvent for the coating solution to a peripheral portion on the solution film of the coating solution on the substrate while rotating the substrate at a predetermined rotation speed to form a mixed layer of the coating solution and the solvent at the peripheral portion. The method includes, then, controlling a film thickness of the coating solution after drying by rotating the substrate at a rotation speed higher than the predetermined rotation speed to push the mixed layer to an outer peripheral side.

公开(公告)号：US11407005B2

公开(公告)日：2022-08-09

申请号：US16869664

申请日：2020-05-08

Applicant: Tokyo Electron Limited

Inventor： Masatoshi Kawakita ,  Yusaku Hashimoto ,  Kosuke Yoshihara

IPC: B05D1/00 ,  B05D3/10 ,  B05C5/02

Abstract: A coating method includes supplying a film forming liquid onto a center of a front surface of a substrate from a nozzle in a state that a distance between the front surface and the nozzle is maintained at a coating distance; rotating the substrate at a first rotation speed in a period during which the film forming liquid is supplied onto the front surface, to allow the film forming liquid to be diffused toward an edge of the substrate from an outer periphery of the nozzle; and rotating the substrate at a second rotation speed after the supplying of the film forming liquid is stopped, to allow the film forming liquid to be further diffused. The coating distance is set to allow the film forming liquid to be kept between the nozzle and the front surface when a discharge of the film forming liquid is stopped.

公开(公告)号：US11693319B2

公开(公告)日：2023-07-04

申请号：US17496965

申请日：2021-10-08

Applicant: Tokyo Electron Limited

Inventor： Keiichi Tanaka ,  Kosuke Yoshihara ,  Yoshihiro Kondo ,  Makoto Muramatsu ,  Teruhiko Kodama

IPC: G03F7/16 ,  G03F7/20 ,  G03F7/00

CPC classification number: G03F7/168 ,  G03F7/2004 ,  G03F7/70058 ,  G03F7/70891

Abstract: A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.