公开(公告)号：US20230420220A1

公开(公告)日：2023-12-28

申请号：US18213228

申请日：2023-06-22

Applicant: ULVAC, Inc.

Inventor： Taichi SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32541 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334

Abstract: A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ2 to the third electrode. A relationship of λ1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.

公开(公告)号：US20220344167A1

公开(公告)日：2022-10-27

申请号：US17728524

申请日：2022-04-25

Applicant: ULVAC, Inc.

Inventor： Taichi SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC: H01L21/3065 ,  H01J37/32 ,  B81C1/00 ,  C23C14/34 ,  C23C14/02

Abstract: An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

公开(公告)号：US20240304453A1

公开(公告)日：2024-09-12

申请号：US18665377

申请日：2024-05-15

Applicant: ULVAC, INC.

Inventor： TAICHI SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC: H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

Abstract: The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SixOyαz; wherein a is any one of F, Cl, H, and CkHl; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

公开(公告)号：US20170316917A1

公开(公告)日：2017-11-02

申请号：US15314772

申请日：2016-01-08

Applicant: ULVAC, INC.

Inventor： Takahide MURAYAMA ,  Yasuhiro MORIKAWA ,  Toshiyuki SAKUISHI

IPC: H01J37/32 ,  H01J17/04 ,  H05H1/46 ,  H05H1/38 ,  H05H1/24

CPC classification number: H01J37/321 ,  H01J17/04 ,  H01J37/32568 ,  H01J2237/0206 ,  H01L21/3065 ,  H05H1/38 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4652 ,  H05H2001/4667 ,  H05H2001/469

Abstract: A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.

公开(公告)号：US20250069858A1

公开(公告)日：2025-02-27

申请号：US18807175

申请日：2024-08-16

Applicant: ULVAC, INC.

Inventor： Kenta DOI ,  Toshiyuki NAKAMURA ,  Yasuhiro MORIKAWA ,  Kensuke AKAZAWA ,  Daisuke HIRONIWA

IPC: H01J37/32 ,  H01J37/09

Abstract: [Object] To provide a plasma processing apparatus capable of expanding an formation region of plasma generated on an upper electrode side to increase the processing speed and a control method therefor.
[Solving Means] A plasma processing apparatus according to an embodiment of the present invention includes a vacuum chamber, a substrate-supporting stage, a counter electrode, and a resonant circuit. The substrate-supporting stage is disposed inside the vacuum chamber and is connected to a first high-frequency power supply circuit that supplies a high-frequency power at a first frequency. The counter electrode is disposed in opposite to the stage and is connected to a second high-frequency power supply circuit that supplies a high-frequency power at a second frequency. The resonant circuit allows high-frequency current at the second frequency from the counter electrode to pass therethrough.

公开(公告)号：US20200315021A1

公开(公告)日：2020-10-01

申请号：US16313847

申请日：2017-11-30

Applicant: ULVAC, INC.

Inventor： Muneyuki SATO ,  Yasuhiro MORIKAWA ,  Minoru SUZUKI

IPC: H05K3/00 ,  H05K3/46

Abstract: A method of the invention is a method of processing a wiring substrate that includes a configuration in which conductors locally disposed on a substrate are coated with resin having inorganic members that form a filler and are dispersed in an organic member, the method including: removing the organic member from a surface layer side of the resin by use of an ashing method; and removing, by use of a wet cleaning method, the inorganic members remaining the surface layer side of the resin from which the organic member is removed.

公开(公告)号：US20150200078A1

公开(公告)日：2015-07-16

申请号：US14671911

申请日：2015-03-27

Applicant: ULVAC, INC.

Inventor： Yasuhiro MORIKAWA

IPC: H01J37/32 ,  C23F4/00

CPC classification number: H01J37/3266 ,  C23F4/00 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J2237/334

Abstract: A method for etching a substrate with plasma, including: holding a substrate on a substrate stage; forming an annular zero magnetic field region lying along a circumferential direction of an inner side of a middle-stage coil of three stages of concentrically-arranged magnetic field coils; supplying-etching gas to an interior of a chamber main body; supplying high frequency power to a high-frequency antenna and an electrode to form an induced electric field in the zero magnetic field region to generate plasma; and etching the substrate with the plasma. Forming an annular zero magnetic field region includes forming the region in a state in which the chamber main body is internally inserted from an inner side of a lowermost stage coil of the magnetic field coils to the inner side of the middle-stage coil so that the zero magnetic field region is formed near an inner surface of the top part.

Abstract translation: 一种用等离子体蚀刻衬底的方法，包括：将衬底保持在衬底台上; 形成沿三个同心配置的磁场线圈的中间线圈的内侧的周向的环状零磁场区域; 向室主体的内部供应蚀刻气体; 向高频天线和电极提供高频电力，以在零磁场区域中形成感应电场以产生等离子体; 并用等离子体蚀刻衬底。 形成环状零磁场区域包括在室主体从磁场线圈的最下段线圈的内侧向中间线圈的内侧内插入的状态下形成区域，使得 零磁场区域形成在顶部的内表面附近。