公开(公告)号：US09559023B2

公开(公告)日：2017-01-31

申请号：US14311747

申请日：2014-06-23

Applicant: Ultratech, Inc.

Inventor： James T. McWhirter ,  Andrew Hawryluk ,  Serguei Anikitichev ,  Masoud Safa

IPC: H01L21/26 ,  H01L21/66 ,  H01L21/324 ,  B23K26/00 ,  B23K26/03 ,  H01L21/268 ,  H01L21/67

CPC classification number: H01L22/26 ,  B23K26/034 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10

Abstract: Systems and methods for reducing beam instability in laser annealing are disclosed. The method includes: directing a conditioned laser beam through an opening in an aperture using a beam-redirecting element; forming a line image on the surface of the semiconductor wafer by imaging the aperture onto the surface, thereby locally heating the surface to form an annealing temperature distribution; detecting a thermal emission from the locally heated wafer surface; determining the annealing temperature distribution from the detected thermal emission; determining from the annealing temperature distribution a line-image intensity profile that includes a time-varying amount of slope; and adjusting the beam-redirecting element to redirect the laser beam to reduce or eliminate the time-varying amount of slope in the line-image intensity profile.

Abstract translation: 公开了用于减少激光退火中的束不稳定性的系统和方法。 该方法包括：使用光束重定向元件将经调节的激光束引导通过孔中的开口; 通过将孔成像到表面上，在半导体晶片的表面上形成线图像，从而局部加热表面以形成退火温度分布; 检测来自局部加热的晶片表面的热发射; 从所检测的热发射确定退火温度分布; 从退火温度分布确定包括时变量斜率的线图像强度分布; 并且调整光束重定向元件以重定向激光束以减少或消除线图像强度分布中的时间变化量的斜率。

公开(公告)号：US20160354865A1

公开(公告)日：2016-12-08

申请号：US15145833

申请日：2016-05-04

Applicant: Ultratech, Inc.

Inventor： James T. McWhirter

IPC: B23K26/12 ,  B23K26/00

CPC classification number: B23K26/125 ,  B23K26/123 ,  B23K26/126 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/0214 ,  H01L21/02247 ,  H01L21/28202 ,  H01L21/3115

Abstract: Microchamber laser processing systems and methods that use a localized process-gas atmosphere are disclosed. The method includes processing a substrate with a surface by providing a process gas to a central region of the microchamber that includes the surface of the substrate and providing a curtain gas to a peripheral region of the chamber that includes the surface of the substrate. The method also includes providing a vacuum to a region of the chamber between its central and peripheral regions of the chamber, wherein the vacuum removes the process gas and curtain gas, thereby forming a localized process-gas atmosphere at the surface of the substrate in the central region of the chamber and a gas curtain of the curtain gas in the peripheral region of the chamber. The method also includes irradiating the surface of the substrate through the localized process-gas atmosphere with a laser beam that forms a laser line to perform a laser process on the surface of the substrate.

Abstract translation: 公开了使用局部化工艺气体气氛的微孔激光加工系统和方法。 该方法包括通过向包括衬底的表面的微室的中心区域提供处理气体来处理具有表面的衬底，并向包括衬底表面的室的周边区域提供帘式气体。 该方法还包括在腔室的中心区域和周边区域之间为腔室的区域提供真空，其中真空去除工艺气体和帘式气体，从而在衬底的表面上形成局部化的工艺气体气氛 腔室的中心区域和腔室的周边区域中的帘式气体的气幕。 该方法还包括用形成激光线的激光束通过局部化的处理气体气氛照射衬底的表面，以在衬底的表面上执行激光处理。

公开(公告)号：US20150371911A1

公开(公告)日：2015-12-24

申请号：US14311747

申请日：2014-06-23

Applicant: Ultratech, Inc.

Inventor： James T. McWhirter ,  Andrew Hawryluk ,  Serguei Anikitichev ,  Masoud Safa

IPC: H01L21/66 ,  B23K26/03 ,  B23K26/00 ,  H01L21/324 ,  H01L21/268

CPC classification number: H01L22/26 ,  B23K26/034 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10

Abstract: Systems and methods for reducing beam instability in laser annealing are disclosed. The method includes: directing a conditioned laser beam through an opening in an aperture using a beam-redirecting element; forming a line image on the surface of the semiconductor wafer by imaging the aperture onto the surface, thereby locally heating the surface to form an annealing temperature distribution; detecting a thermal emission from the locally heated wafer surface; determining the annealing temperature distribution from the detected thermal emission; determining from the annealing temperature distribution a line-image intensity profile that includes a time-varying amount of slope; and adjusting the beam-redirecting element to redirect the laser beam to reduce or eliminate the time-varying amount of slope in the line-image intensity profile.

Abstract translation: 公开了用于减少激光退火中的束不稳定性的系统和方法。 该方法包括：使用光束重定向元件将经调节的激光束引导通过孔中的开口; 通过将孔成像到表面上，在半导体晶片的表面上形成线图像，从而局部加热表面以形成退火温度分布; 检测来自局部加热的晶片表面的热发射; 从所检测的热发射确定退火温度分布; 从退火温度分布确定包括时变量斜率的线图像强度分布; 并且调整光束重定向元件以重定向激光束以减少或消除线图像强度分布中的时间变化量的斜率。

公开(公告)号：US08691598B1

公开(公告)日：2014-04-08

申请号：US13706397

申请日：2012-12-06

Applicant: Ultratech, Inc.

Inventor： James T. McWhirter ,  David Gaines ,  Joseph Lee ,  Paolo Zambon

IPC: H01L21/00

CPC classification number: B23K26/083 ,  B23K26/0006 ,  B23K26/034 ,  B23K26/0732 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/52 ,  C30B33/04 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02675 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248

Abstract: Systems and methods for performing semiconductor laser annealing using dual loop control are disclosed. The first control loop operates at a first frequency and controls the output of the laser and controls the 1/f laser noise. The second control loop also controls the amount of output power in the laser and operates at second frequency lower than the first frequency. The second control loop measures the thermal emission of the wafer over an area the size of one or more die so that within-die emissivity variations are average out when determining the measured annealing temperature. The measured annealing temperature and an annealing temperature set point are used to generate the control signal for the second control loop.

Abstract translation: 公开了使用双回路控制进行半导体激光退火的系统和方法。 第一个控制回路以第一个频率工作，控制激光器的输出并控制1 / f激光噪声。 第二控制回路还控制激光器中的输出功率量并且在比第一频率低的第二频率下工作。 第二控制回路测量在一个或多个管芯的尺寸的区域上的晶片的热发射，使得当确定测量的退火温度时，在管芯内的发射率变化是平均的。 测量退火温度和退火温度设定点用于产生第二控制回路的控制信号。