公开(公告)号：US20240421053A1

公开(公告)日：2024-12-19

申请号：US18334527

申请日：2023-06-14

Applicant: WOLFSPEED, INC.

Inventor： Qianli MU ,  Heather BARTON ,  Basim NOORI ,  Dan NAMISHIA ,  Dan ETTER ,  Alexander KOMPOSCH

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/14 ,  H01L23/58

Abstract: A device includes at least one integrated passive device having at least one bond pad; at least one semiconductor device having at least one bond pad; and at least one connection structure arranged on the at least one integrated passive device. Additionally, the at least one connection structure includes a solder portion configured to form a solder connection to the at least one bond pad of the at least one semiconductor device.

公开(公告)号：US20230197587A1

公开(公告)日：2023-06-22

申请号：US17555106

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Donald FARRELL ,  Marvin MARBELL ,  Jeremy FISHER ,  Dan NAMISHIA ,  Scott SHEPPARD ,  Dan ETTER

IPC: H01L23/495 ,  H01L23/64 ,  H01L23/00

CPC classification number: H01L23/49589 ,  H01L23/645 ,  H01L23/647 ,  H01L23/49575 ,  H01L24/85 ,  H01L29/778

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; at least one integrated passive device (IPD) component that includes a substrate arranged on said metal submount; and one or more interconnects extending between the transistor die and the at least one integrated passive device (IPD) component. The substrate includes a silicon carbide (SiC) substrate.