公开(公告)号：US20230420439A1

公开(公告)日：2023-12-28

申请号：US17849353

申请日：2022-06-24

Applicant: WOLFSPEED, INC.

Inventor： Haedong JANG ,  Marvin MARBELL ,  Jeremy FISHER

IPC: H01L25/18 ,  H01L27/01 ,  H01L25/065 ,  H03F1/56 ,  H03F3/195

CPC classification number: H01L25/18 ,  H01L27/01 ,  H01L25/0655 ,  H03F1/565 ,  H03F3/195 ,  H01L24/45

Abstract: An amplifier circuit that includes an RF amplifier; an impedance matching network; a higher order harmonic termination circuit; a fundamental frequency matching circuit; and an integrated passive device (IPD) that includes a silicon carbide (SiC) substrate. The integrated passive device (IPD) includes one or more reactive components of the fundamental frequency matching circuit and one or more reactive components of the higher order harmonic termination circuit.

公开(公告)号：US20240341026A1

公开(公告)日：2024-10-10

申请号：US18296461

申请日：2023-04-06

Applicant: WOLFSPEED, INC.

Inventor： Haedong JANG ,  Marvin MARBELL ,  Jeremy FISHER

IPC: H05K1/02 ,  H05K1/11 ,  H05K1/18

CPC classification number: H05K1/0201 ,  H05K1/116 ,  H05K1/181 ,  H01L25/162 ,  H05K2201/0326 ,  H05K2201/066 ,  H05K2201/10015

Abstract: A component includes a substrate board; a thermal bridge structured and arranged on the substrate board, where the thermal bridge is configured to transfer heat from the substrate board including an area adjacent to or on a hotspot of the substrate board; where the thermal bridge is configured to transfer the heat to another location on the substrate board for removal of the heat from the substrate board; and where the thermal bridge may include silicon carbide.

公开(公告)号：US20240213184A1

公开(公告)日：2024-06-27

申请号：US18145961

申请日：2022-12-23

Applicant: WOLFSPEED, INC.

Inventor： Haedong JANG ,  Mehdi HASAN ,  Marvin MARBELL ,  Jeremy FISHER

IPC: H01L23/66 ,  H01L21/48 ,  H01L23/00 ,  H01L23/053 ,  H01L23/367 ,  H01L25/16

CPC classification number: H01L23/66 ,  H01L21/4817 ,  H01L23/053 ,  H01L23/367 ,  H01L24/48 ,  H01L25/165 ,  H01L2223/6672 ,  H01L2224/48175 ,  H01L2924/1033 ,  H01L2924/1205 ,  H01L2924/1207 ,  H01L2924/13064 ,  H01L2924/1421

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; an IPD component arranged on said metal submount, and the IPD component having a baseband damping resistor arranged on a thermally conductive dielectric substrate; and a second IPD component arranged on said metal submount, and the second IPD component may include a baseband decoupling capacitor arranged on a thermally conductive dielectric substrate.

公开(公告)号：US20250080063A1

公开(公告)日：2025-03-06

申请号：US18461980

申请日：2023-09-06

Applicant: WOLFSPEED, INC.

Inventor： Jonathan CHANG ,  Qianli MU ,  Marvin MARBELL ,  Zulhazmi MOKHTI

IPC: H03F3/195 ,  H01L23/66 ,  H01L29/778 ,  H03F1/02 ,  H03F1/56

Abstract: A device may include at least one drain pad arranged at a first die side of the transistor die and/or at a second die side of the transistor die, the first die side and the second die side being opposed sides of the transistor die. Also, the device may include drain fingers configured to extend from the at least one drain pad longitudinally toward a central location of the transistor die. Furthermore, the device may include source fingers configured to extend from the at least one drain pad longitudinally toward the central location of the transistor die. In addition, the device may include a gate pad and a gate and the gate is configured to extend along implementations of the drain fingers and/or the source fingers. Moreover, the device may include where the gate pad is arranged on an axis at least semi-orthogonally to an axis of the at least one drain pad.

公开(公告)号：US20240105390A1

公开(公告)日：2024-03-28

申请号：US17951523

申请日：2022-09-23

Applicant: WOLFSPEED, INC.

Inventor： Kok Meng KAM ,  Eng Wah WOO ,  Samantha CHEANG ,  Marvin MARBELL ,  Haedong JANG ,  Jeremy FISHER ,  Basim NOORI

IPC: H01G4/228 ,  H01L23/00 ,  H01L23/48 ,  H01L25/04 ,  H01L49/02

CPC classification number: H01G4/228 ,  H01L23/481 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L25/04 ,  H01L28/60 ,  H01L2224/05541 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/32227 ,  H01L2224/83815 ,  H01L2924/10272 ,  H01L2924/1205

Abstract: In some aspects, a device includes a substrate. A first metallization arranged on the substrate. A second metallization arranged on the substrate. A circuit arranged on the substrate and electrically connected to the first metallization and the second metallization. The first metallization and the second metallization being configured, structured, and arranged to make a solder connection to a device, where the substrate may include silicon carbide (SiC).

公开(公告)号：US20230207496A1

公开(公告)日：2023-06-29

申请号：US17560811

申请日：2021-12-23

Applicant: WOLFSPEED, INC.

Inventor： Marvin MARBELL

IPC: H01L23/66 ,  H01L23/495 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

CPC classification number: H01L23/66 ,  H01L23/49575 ,  H01L24/48 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/48195 ,  H01L2224/48175 ,  H01L2223/6655

Abstract: A device that includes a metal submount; a first transistor die arranged on said metal submount; a second transistor die arranged on said metal submount; a set of primary interconnects; and a set of secondary interconnects. Additionally, the set of primary interconnects and the set of secondary interconnects are configured to provide RF signal coupling between the first transistor die and the second transistor die by electromagnetic coupling.

公开(公告)号：US20230197698A1

公开(公告)日：2023-06-22

申请号：US17555015

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Marvin MARBELL ,  Haedong JANG ,  Jeremy FISHER ,  Basim NOORI

IPC: H01L25/16

CPC classification number: H01L25/16 ,  H01L2924/1205 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/13064 ,  H01L2924/13063 ,  H01L24/48

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; a first integrated passive device (IPD) component that includes a first substrate arranged on said metal submount; and a second integrated passive device (IPD) component that includes a second substrate arranged on the metal submount. Additionally, the first substrate is a different material from the second substrate.

公开(公告)号：US20230197587A1

公开(公告)日：2023-06-22

申请号：US17555106

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Donald FARRELL ,  Marvin MARBELL ,  Jeremy FISHER ,  Dan NAMISHIA ,  Scott SHEPPARD ,  Dan ETTER

IPC: H01L23/495 ,  H01L23/64 ,  H01L23/00

CPC classification number: H01L23/49589 ,  H01L23/645 ,  H01L23/647 ,  H01L23/49575 ,  H01L24/85 ,  H01L29/778

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; at least one integrated passive device (IPD) component that includes a substrate arranged on said metal submount; and one or more interconnects extending between the transistor die and the at least one integrated passive device (IPD) component. The substrate includes a silicon carbide (SiC) substrate.