公开(公告)号：US20240421053A1

公开(公告)日：2024-12-19

申请号：US18334527

申请日：2023-06-14

Applicant: WOLFSPEED, INC.

Inventor： Qianli MU ,  Heather BARTON ,  Basim NOORI ,  Dan NAMISHIA ,  Dan ETTER ,  Alexander KOMPOSCH

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/14 ,  H01L23/58

Abstract: A device includes at least one integrated passive device having at least one bond pad; at least one semiconductor device having at least one bond pad; and at least one connection structure arranged on the at least one integrated passive device. Additionally, the at least one connection structure includes a solder portion configured to form a solder connection to the at least one bond pad of the at least one semiconductor device.

公开(公告)号：US20240429122A1

公开(公告)日：2024-12-26

申请号：US18340607

申请日：2023-06-23

Applicant: WOLFSPEED, INC.

Inventor： Kyle BOTHE ,  James TWEEDIE ,  Fabian RADULESCU ,  Michael SCHUETTE ,  Jeremy FISHER ,  Basim NOORI ,  Scott SHEPPARD

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498

Abstract: A thermally conductive interposer includes an interposer substrate having a first substrate surface and a second substrate surface. The first substrate surface being configured to be attached to a first device component. The second substrate surface being configured to be attached to a second device component. The interposer substrate being configured to support the second device component on the first device component and integrate the first device component and the second device component within a microelectronic device. Further, the interposer substrate is configured to transfer heat between the first device component and the second device component; and the interposer substrate is configured to be electrically nonconductive.

公开(公告)号：US20240105390A1

公开(公告)日：2024-03-28

申请号：US17951523

申请日：2022-09-23

Applicant: WOLFSPEED, INC.

Inventor： Kok Meng KAM ,  Eng Wah WOO ,  Samantha CHEANG ,  Marvin MARBELL ,  Haedong JANG ,  Jeremy FISHER ,  Basim NOORI

IPC: H01G4/228 ,  H01L23/00 ,  H01L23/48 ,  H01L25/04 ,  H01L49/02

CPC classification number: H01G4/228 ,  H01L23/481 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L25/04 ,  H01L28/60 ,  H01L2224/05541 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/32227 ,  H01L2224/83815 ,  H01L2924/10272 ,  H01L2924/1205

Abstract: In some aspects, a device includes a substrate. A first metallization arranged on the substrate. A second metallization arranged on the substrate. A circuit arranged on the substrate and electrically connected to the first metallization and the second metallization. The first metallization and the second metallization being configured, structured, and arranged to make a solder connection to a device, where the substrate may include silicon carbide (SiC).

公开(公告)号：US20230197698A1

公开(公告)日：2023-06-22

申请号：US17555015

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Marvin MARBELL ,  Haedong JANG ,  Jeremy FISHER ,  Basim NOORI

IPC: H01L25/16

CPC classification number: H01L25/16 ,  H01L2924/1205 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/13064 ,  H01L2924/13063 ,  H01L24/48

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; a first integrated passive device (IPD) component that includes a first substrate arranged on said metal submount; and a second integrated passive device (IPD) component that includes a second substrate arranged on the metal submount. Additionally, the first substrate is a different material from the second substrate.