Method And Apparatus For Determining The Emissivity, Area And Temperature Of An Object
    2.
    发明申请
    Method And Apparatus For Determining The Emissivity, Area And Temperature Of An Object 有权
    用于确定物体的发射率,面积和温度的方法和装置

    公开(公告)号:US20100256945A1

    公开(公告)日:2010-10-07

    申请号:US11951698

    申请日:2007-12-06

    Inventor: Ronald N. Murata

    Abstract: Methods and apparatus are provided to determine the emissivity, temperature and area of an object. The methods and apparatus are designed such that the emissivity and area of the object may be separately determined as functions dependent upon the temperature of the object derived from a three or more band infrared measurement sensor. As such, the methods and apparatus may only require a regression analysis of the temperature of the object without any regression analysis of the emissivity and area of the object.

    Abstract translation: 提供方法和装置来确定物体的发射率,温度和面积。 方法和装置被设计成使得物体的发射率和面积可以单独地确定为取决于从三个或更多个带状红外测量传感器导出的物体的温度的函数。 因此,方法和装置可以仅需要物体的温度的回归分析,而不对物体的发射率和面积进行任何回归分析。

    Thermal imaging system and method
    3.
    发明授权
    Thermal imaging system and method 失效
    热成像系统及方法

    公开(公告)号:US07422365B2

    公开(公告)日:2008-09-09

    申请号:US10554140

    申请日:2004-04-23

    Abstract: A thermal imaging system and method for quantitative thermal mapping of a scene. The system comprises a thermal imaging device, a heat source of known temperature and emissivity located within the scene viewed by the thermal imaging device and a processor adapted to generate a calibrated temperature map of the scene from the data supplied by the thermal imaging device, based on the known temperature of the heat source. This enables accurate temperature measurements to be made using inexpensive uncooled Focal Plane Array detectors.

    Abstract translation: 一种用于场景的定量热映射的热成像系统和方法。 该系统包括热成像装置,已知温度的热源和位于由热成像装置观看的场景内的发射率,以及处理器,其适于根据由热成像装置提供的数据生成校准的温度图, 在已知的热源温度下。 这使得可以使用廉价的未冷却的焦平面阵列检测器进行精确的温度测量。

    Apparatus for measuring temperature inside reactors
    4.
    发明授权
    Apparatus for measuring temperature inside reactors 有权
    用于测量反应器内温度的装置

    公开(公告)号:US6053632A

    公开(公告)日:2000-04-25

    申请号:US175809

    申请日:1998-10-20

    Abstract: An apparatus for measuring the temperature of a gasification reactor using an optical pyrometer is disclosed. In one embodiment the apparatus may include a feed injector adapted to receive light conduits. The feed injector (2) includes a feed injector tip (6) having an opening, the feed injector tip being in fluid communication with a feed inlet (8) and a flange connector (4), the flange connector being in optical alignment with the opening of the feed injector tip. A blind flange (10) should be sized to fit on the flange connector of the feed injector and thereby form a gas pressure resistant seal. A pressure sealing gland (12) is fitted in the blind flange such that a light conduit (22a or 22b) can pass through the blind flange and that the receiving end of the light conduit extends into the feed injector such that the light receiving end of the light conduit is in optical alignment with the opening of the feed injector tip. An optical coupler (26a or 26b) functions as an optical connection between the light transmitting end of the light conduit to an fiber optic cable (28a or 28b) and thus to an optical pyrometer.

    Abstract translation: 公开了一种使用光学高温计测量气化反应器的温度的装置。 在一个实施例中,设备可以包括适于接收光导管的进料喷射器。 进料喷射器(2)包括具有开口的进料喷射器末端(6),进料喷射器尖端与进料入口(8)和凸缘连接器(4)流体连通,凸缘连接器与 打开进料喷嘴尖端。 一个盲法兰(10)的尺寸应适合装在进料注射器的法兰连接器上,从而形成耐气体的密封。 在盲法兰中安装有压力密封压盖(12),使得光导管(22a或22b)能够穿过盲凸缘,并且光导管的接收端延伸到进料喷射器中,使得光导管 光导管与进料喷射器尖端的开口光学对准。 光耦合器(26a或26b)用作光导管的光传输端与光纤电缆(28a或28b)之间的光学连接,从而用作光学高温计。

    Non-contact temperature measurement of a film growing on a substrate
    5.
    发明授权
    Non-contact temperature measurement of a film growing on a substrate 失效
    在基板上生长的膜的非接触式温度测量

    公开(公告)号:US5377126A

    公开(公告)日:1994-12-27

    申请号:US759427

    申请日:1991-09-13

    Abstract: Apparatus and method for non-contact temperature measurement of a film growing on a substrate which accounts for the change in emissivity due to the change in film thickness. The system employs an adaptively calibrated pyrometer wherein the substrate emittance is continuously computed so that the temperature measurement is accurate regardless of the emittance variation. The new system is easily constructed by adding data processing system software and hardware to conventional pyrometers.

    Abstract translation: 用于在基板上生长的膜的非接触式温度测量的装置和方法,其考虑了由于膜厚度的变化引起的发射率的变化。 该系统采用自适应校准的高温计,其中连续地计算衬底发射率,使得温度测量是准确的,而与发射率变化无关。 通过将数据处理系统软件和硬件添加到常规高温计中,可以轻松构建新系统。

    Reflectance probe
    6.
    发明授权
    Reflectance probe 失效
    反射探头

    公开(公告)号:US5282017A

    公开(公告)日:1994-01-25

    申请号:US461285

    申请日:1990-01-05

    Abstract: Apparatus for measuring the value of the directional spectral hemispherical reflectance of the surface of a target when not engaging but being spaced from the target employs a hollow elongated member having a longitudinal axis and first and second opposite ends. The area of the first end is relatively large relative to that of the second end. The first end is open. The member has an inner chamber extending between the ends and has an inner surface adapted to reflect light falling within a specified wave band. The member when the apparatus is in use is positioned with the first end adjacent but spaced from a selected portion of the surface of the target. The longitudinal axis is oriented essentially normal to a region on the selected surface which would be engaged by a line coincident with the axis and sufficiently extended outwardly from the first end. A beam of light falling within said band is directed within at least a portion of the chamber along the axis and outward through the first end to impinge upon the selected surface portion. A portion of the beam is reflected after said impingement backward through the first end into the chamber. The reflected light which strikes the inner surface of the chamber is directed backwardly within the chamber toward the second end. An electrical signal derived from at least a portion of the backwardly directed light provides a measurement of said reflectance value.

    Abstract translation: 用于测量目标表面的方向光谱半球反射值在不接合但与目标间隔时的值的装置采用具有纵向轴线的中空细长构件以及第一和第二相对端。 第一端的面积相对于第二端的面积相对较大。 第一端是开放的 该构件具有在端部之间延伸的内室,并且具有适于反射落入指定波段内的光的内表面。 当设备使用时的构件定位成第一端与目标的表面的选定部分相邻但间隔开。 纵向轴线基本上垂直于所选择的表面上的区域,该区域将被与轴线重合并且从第一端向外充分延伸的线路接合。 落在所述带内的光束沿着轴线被引导到腔室的至少一部分内并且穿过第一端向外引导到所选择的表面部分上。 所述梁的一部分在所述冲击之后通过所述第一端向后反射进入所述室。 撞击室的内表面的反射光在腔室内向后指向第二端。 从后向光的至少一部分导出的电信号提供所述反射率值的测量值。

    Apparatus and method for compensating for errors in temperature
measurement of semiconductor wafers during rapid thermal processing
    7.
    发明授权
    Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing 失效
    用于在快速热处理期间补偿半导体晶片的温度测量误差的装置和方法

    公开(公告)号:US4969748A

    公开(公告)日:1990-11-13

    申请号:US337628

    申请日:1989-04-13

    Abstract: The present invention is a method and apparatus for calibrating a temperature feedback value in a wafer processing chamber to automatically compensate for variations in infrared emissions from a heated semiconductor wafer due to variations in composition and coatings from wafer to wafer. A calibration wafer with an imbedded thermocouple is used to generate a table relating actual wafer temperatures to power supplied to the heating chamber and infrared emissions detected by a pyrometer. A sample wafer of a batch to be processed is subsequently placed in the chamber at a known power level, and any difference between the detected infrared emission value and the value in the table is used to adjust the entire table according to a first predetermined formula or table. Before each wafer is processed, a known source of infrared light is reflected off the wafer and detected. The reflected light value is compared to a reflection measurement for the sample wafer. The difference in reflection measurements is correlated to emissions from heating, and the calibration table is fine-tuned with the correlation value according to a second predetermined formula or table to account for variations in emissions between individual wafers due to variances in wafer surface conditions.

    Abstract translation: 本发明是用于校准晶片处理室中的温度反馈值的方法和装置,以自动补偿来自加热的半导体晶片的红外发射的变化,这是由于晶片与晶片的组成和涂层的变化。 具有嵌入式热电偶的校准晶片用于产生将实际晶片温度与供应到加热室的功率和由高温计检测到的红外发射相关的表格。 随后将待处理批次的样品晶片以已知功率水平放置在腔室中,并且使用检测到的红外发射值与表中的值之间的任何差异来根据第一预定公式调整整个工作台,或 表。 在每个晶片被处理之前,已知的红外光源从晶片反射并被检测。 将反射光值与样品晶片的反射测量进行比较。 反射测量的差异与来自加热的发射相关,并且校准表根据第二预定公式或表通过相关值进行微调,以考虑由于晶片表面条件的变化而导致的各个晶片之间的发射变化。

    Laser radiometer
    8.
    发明授权
    Laser radiometer 失效
    激光辐射计

    公开(公告)号:US4417822A

    公开(公告)日:1983-11-29

    申请号:US319244

    申请日:1981-11-09

    Abstract: The present invention teaches a unique laser radiometer capable of accurately measuring the radiation temperature of a radiant surface and independently measuring the surface's emissivity. A narrow-band radiometer is combined with a laser reflectometer to measure concurrently radiance and emissivity of a remote, hot surface. Together, radiance and emissivity yield the true surface temperature of the remote target. A narrow receiver bandwidth is attained by one of two methods; (a) heterodyne detection or (b) optical filtering. A direct measurement of emissivity is used to adjust the value obtained for the thermal radiation signal to substantially enhance the accuracy of the temperature measurement for a given subject surface. The technique provides substantially high detection sensitivity over a very narrow spectral bandwidth.

    Abstract translation: 本发明教导了一种独特的激光辐射计,能够精确地测量辐射表面的辐射温度并独立地测量表面的发射率。 窄带辐射计与激光反射计相结合,以测量远程热表面的辐射和发射率。 一起,辐射和发射率产生远程目标的真实表面温度。 通过两种方法之一获得窄的接收机带宽; (a)外差检测或(b)光学滤波。 使用辐射率的直接测量来调整对于热辐射信号获得的值,以显着提高给定对象表面的温度测量的精度。 该技术在非常窄的光谱带宽上提供了显着高的检测灵敏度。

Patent Agency Ranking