Abstract:
Apparatus for spraying paint on a can or can top includes a carrier for the article, the carrier being formed of with a pedestal, a shaft extending upwardly from the pedestal, and an adapter mounted on the shaft. The adapter engages the article and causes it spin as the carrier spins at the spray painting station. Further, a bottom plate of the apparatus is formed with a slot through which the carrier shaft extends, thereby shielding lower portions of the apparatus from inadvertent spraying. Additionally, the apparatus positions individual carriers at the spraying station by means of a rotatable disc in which a slot that extends from the periphery toward the center of the disc engages the shaft of a carrier and, as the disc rotates, moves the shaft and the can it carries to the desired
Abstract:
The invention concerns a method which consists in maintaining the two ends (2, 4) of the bar (1) on the end supports (3, 5) of a frame (10), one of the ends (2) being maintained fixed, and in driving the bar in rotation. The invention is characterised in that it consists further in drawing the bar (1) while spraying a coat on the bar, the drawing of the bar corresponding to an elongation of about 0.2 to 0.001%.
Abstract:
The disk carrier with spindle comprises an outer shell including an upper portion and a lower portion that connect together to form a chamber to enclose disks and constrain a spindle in place in the chamber. The spindle further comprises elongated portions or partial cylinder sections joined by a hinge so that the spindle can be moved into a contracted position to freely pass through a central aperture of a disk or into an expanded position to contact the inner perimeter of the disk and secure the disk.
Abstract:
A plasma processing system has a susceptor, provided in a processing vessel, for supporting thereon a substrate. A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film formed on a base, and a plurality of protrusions formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.
Abstract:
In a method of injecting an electrically conductive epoxy into blind vias during drilling or shortly thereafter in order to avoid oxidation of the copper or other metal of the imbedded layer, a machine tool is provided with at least one controllable spindle and at least one injection device. Alternatively, two machine tools, one with at least one controllable spindle and one with at least one injection device, may be provided. A printed circuit board mounted on the machine tool table for drilling is registered in the usual way for the particular machine tool. The machine tool part program then drills a particular pattern for the circuit board for mounting of circuit board components. All of the blind vias as well as through hole vias are drilled at one time by the machine tool by the tools mounted in the spindle or by laser drilling systems, but may also be drilled and filled in any sequence. The drilling operation is followed by the epoxy injecting operation in which a controlled operating device, comprising a reservoir, a pumping mechanism, a hollow needle through which the conductive epoxy flows to the bottom of the hole, a control mechanism, and sensors detect various mechanism operations and when hole fill is completed.
Abstract:
A system for processing a workpiece includes a base having a bowl or recess for holding a liquid. A process reactor or head holds a workpiece between an upper rotor and a lower rotor. A head lifter lowers the head holding the workpiece into contact with the liquid. The head spins the workpiece during or after contact with the liquid. The upper and lower rotors have side openings for loading and unloading a workpiece into the head. The rotors are axially moveable to align the side openings.
Abstract:
A method for staining a plurality of semiconductor wafers and wafer samples with a chemical. The method includes gripping first and second semiconductor wafers and orienting the second semiconductor wafer such that it is substantially coplanar with the first semiconductor wafer and suspending the first and second semiconductor wafers such that at least portions thereof extend into the chemical. The method may also include gripping a first semiconductor wafer and a second semiconductor wafer that has a different size from the first and suspending first and second semiconductor wafers such that at least portions thereof extend into the chemical.
Abstract:
An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.
Abstract:
A substrate holding structure having excellent corrosion resistance and airtightness, having excellent dimensional accuracy and having sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure according to the present invention comprises a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned between the ceramic base (2) and the protective cylinder (7) for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest ratio among the aforementioned three types of components in the joining layer (8).