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公开(公告)号：JP2003197864A
公开(公告)日：2003-07-11
申请号：JP2002353268
申请日：2002-12-05
Applicant: ABB RESEARCH LTD
Inventor： BIJLENGA BO , ZWICK FABIAN , LINDER STEFAN , ERNE PATRICK
Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor module having a unit with a large blocking voltage per physical height. SOLUTION: The power semiconductor module (1) comprises a housing (5), a covering panel (11) and at least two submodules (21, 22). The submodules (21, 22) each comprises at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections (3, 4) of the submodules. The submodules (21, 22) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel (11) of the module. The submodules are electrically connected in series. The maximum blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003197861A
公开(公告)日：2003-07-11
申请号：JP2002350739
申请日：2002-12-03
Applicant: ABB RESEARCH LTD
Inventor： BIJLENGA BO , ZWICK FABIAN , HAMIDI AMINA , MEYSENC LUC , KAUFMANN STEFAN , ERNE PATRICK
Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor submodule and power semiconductor module which have higher blocking voltages and are substantially equal in physical height to each other. SOLUTION: The power semiconductor module (1) has at least two semiconductor chips (21, 22), which have two main electrodes 3 and 4 between two main connection parts (6, 7) and also have one main electrode (3) applied with a contact force by a contact die (8) to press the other electrode (4) against a base plate (5). Those two semiconductor chips (21, 22) are electrically connected in series between two main connection parts (6, 7) of the power semiconductor submodule. COPYRIGHT: (C)2003,JPO
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