반도체 기판의 제조 방법에서 사용하기 위한 절단 가능한 첨가제

    公开(公告)号:KR20200139192A

    公开(公告)日:2020-12-11

    申请号:KR20207030926

    申请日:2019-04-02

    Applicant: BASF SE

    Abstract: 반도체기판의적어도하나의표면의개질및/또는처리에서절단가능한첨가제로서, 바람직하게는절단가능한계면활성제로서의유기화합물의사용이기재되어있다. 더욱이, 반도체기판을제조하는방법이설명되어있는데, 이는적어도하나의표면을유기화합물과, 또는이를포함하는조성물과접촉시켜상기표면을처리또는개질하는단계, 상기유기화합물을단편들의세트로절단하는단계및 상기단편들의세트를접촉표면에서제거하는단계를포함한다. 보다구체적으로, 반도체기판또는중간반도체기판을세정또는린싱하는방법이기재되어있다. 또한, 위에서지적한용도및 방법에적합하고바람직하게는절단가능한계면활성제인화합물이기재되어있다.

    Composición acuosa alcalina de grabado y de limpieza y procedimiento de tratamiento de la superficie de sustratos de silicio

    公开(公告)号:ES2699223T3

    公开(公告)日:2019-02-08

    申请号:ES11792023

    申请日:2011-06-01

    Applicant: BASF SE

    Abstract: Una composición acuosa alcalina de grabado y de limpieza que comprende: (A) al menos un hidróxido de amonio cuaternario; preferiblemente seleccionado del grupo que consiste en hidróxido de tetrametilamonio e hidróxido de tetraetilamonio; y (B) al menos un componente seleccionado del grupo que consiste en (b1) ácidos sulfónicos solubles en agua y sus sales solubles en agua de fórmula general I: (R1-SO3-)nXn+ (I), (b2) ácidos fosfónicos solubles en agua y sus sales solubles en agua de fórmula general II: R-PO32-(Xn+)3-n (II), (b3) ésteres de ácido sulfúrico solubles en agua y sus sales solubles en agua de fórmula general III: (RO-SO3-)nXn+ (III), (b4) ésteres de ácido fosfórico solubles en agua y sus sales solubles en agua de fórmula general (IV): RO-PO32-(Xn+)3-n (IV), y (b5) ésteres de ácido fosfórico solubles en agua y sus sales solubles en agua de fórmula general (V): [(RO)2PO2 -]nXn+ (V); en las que el índice n = 1 o 2; la variable X se selecciona del grupo que consiste en hidrógeno, metal alcalino y metal alcalinotérreo; la variable R1 se selecciona del grupo que consiste en restos alifáticos que tienen de 2 a 5 átomos de carbono y al menos un doble enlace olefínicamente insaturado, y restos cicloalifáticos que tienen de 4 a 6 átomos de carbono y al menos un doble enlace olefínicamente insaturado; preferiblemente, por lo que R1 se selecciona de vinilo, prop-1-en-1-ilo, prop-2-en-1-ilo (alilo) y alfa-metil-vinilo; y la variable R se selecciona del grupo que consiste en restos alifáticos que tienen 2 a 5 átomos de carbono y al menos un doble enlace olefínicamente insaturado, restos cicloalifáticos que tienen 4 a 6 átomos de carbono y al menos un doble enlace olefínicamente insaturado, y restos alquilarilo, en los que los restos arilo se seleccionan de benceno y naftaleno, los restos alquilo se seleccionan de metileno, etano-diilo y propano-diilo, y R se selecciona preferiblemente de vinilo, prop-1-en-1-ilo, prop-2-en-1-ilo (alilo), alfa-metil-vinilo y bencilo; y el átomo de fósforo en la fórmula general II está unido directamente y el átomo de azufre en la fórmula general III y el átomo de fósforo en las fórmulas generales IV y V están unidos cada uno a través de un átomo de oxígeno a un átomo de carbono alifático; preferiblemente, por lo que la composición se caracteriza porque su pH es de 8 a 13.

    AQUEOUS ACIDIC SOLUTION AND ETCHING SOLUTION AND METHOD FOR TEXTURIZING SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES

    公开(公告)号:SG187756A1

    公开(公告)日:2013-03-28

    申请号:SG2013009360

    申请日:2011-08-25

    Applicant: BASF SE

    Abstract: An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1 ) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.

    AQUEOUS ALKALINE ETCHING AND CLEANING COMPOSITION AND METHOD FOR TREATING THE SURFACE OF SILICON SUBSTRATES

    公开(公告)号:SG186108A1

    公开(公告)日:2013-01-30

    申请号:SG2012087946

    申请日:2011-06-01

    Applicant: BASF SE

    Abstract: An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1-S03-)nXn+ (I), R-P032- (Xn+)3-n (II); (RO-S03-)nXn+ (III), RO-P032- (Xn+)3-n, (IV), and [(RO)2P02-] nXn+ (V); wherein the n = 1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.

    AQUEOUS ACIDIC ETCHING SOLUTION AND METHOD FOR TEXTURING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES

    公开(公告)号:SG178834A1

    公开(公告)日:2012-04-27

    申请号:SG2012011235

    申请日:2010-09-09

    Abstract: An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protru- sions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.

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