Anti-reflective coating composition with improved spin bowl compatibility
    1.
    发明专利
    Anti-reflective coating composition with improved spin bowl compatibility 有权
    抗反射涂层组合物具有改善的纺丝相容性

    公开(公告)号:JP2009037245A

    公开(公告)日:2009-02-19

    申请号:JP2008216969

    申请日:2008-08-26

    CPC classification number: C08J3/241 G03F7/091 Y10S430/151

    Abstract: PROBLEM TO BE SOLVED: To provide an anti-reflective coating composition that does not crosslink prior to a bake stage in microlithographic processes so as to solve problems of spin bowl incompatibility and stability of an anti-reflective coating. SOLUTION: The anti-reflective composition includes a polymer dissolved or dispersed in a solvent system, a crosslinking agent, a light attenuating compound and a strong acid. The polymer is selected from a group consisting of acrylic polymers, polyesters, epoxy novolacs, polysaccharides, polyethers, polyimides and mixtures thereof. The crosslinking agent is selected from a group consisting of amino resin and epoxy resin. The light attenuating compound is selected from a group consisting of phenolic compounds, carboxylic acid, phosphoric acid, cyano compounds, benzene, naphthalene and anthracene. The composition contains the strong acid by less than 1.0 mass% based upon the total mass of the composition taken as 100 mass%. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供在微光刻工艺中在烘烤阶段之前不交联的抗反射涂料组合物,以解决纺丝碗不相容性和抗反射涂层的稳定性的问题。 抗反射组合物包括溶解或分散在溶剂体系中的聚合物,交联剂,光衰减化合物和强酸。 聚合物选自丙烯酸聚合物,聚酯,环氧酚醛清漆,多糖,聚醚,聚酰亚胺及其混合物。 交联剂选自氨基树脂和环氧树脂。 光衰减化合物选自酚类化合物,羧酸,磷酸,氰基化合物,苯,萘和蒽。 组合物以占组合物总质量的100质量%为基准,含有小于1.0质量%的强酸。 版权所有(C)2009,JPO&INPIT

    Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties

    公开(公告)号:AU2003282554A8

    公开(公告)日:2004-05-04

    申请号:AU2003282554

    申请日:2003-10-07

    Abstract: Novel anti-reflective coatings comprising small molecules (e.g., less than about 5,000 g/mole) in lieu of high molecular weight polymers and methods of using those coatings are provided. In one embodiment, aromatic carboxylic acids are used as the chromophores, and the resulting compounds are blended with a crosslinking agent and an acid. Anti-reflective coating films prepared according to the invention exhibit improved properties compared to high molecular weight polymeric anti-reflective coating films. The small molecule anti-reflective coatings have high etch rates and good via fill properties. Photolithographic processes carried out with the inventive material result in freestanding, 110-nm profiles.

    BOTTOM ANTI-REFLECTIVE COATINGS DERIVED FROM SMALL CORE MOLECULES WITH MULTIPLE EPOXY MOIETIES

    公开(公告)号:AU2003282554A1

    公开(公告)日:2004-05-04

    申请号:AU2003282554

    申请日:2003-10-07

    Abstract: Novel anti-reflective coatings comprising small molecules (e.g., less than about 5,000 g/mole) in lieu of high molecular weight polymers and methods of using those coatings are provided. In one embodiment, aromatic carboxylic acids are used as the chromophores, and the resulting compounds are blended with a crosslinking agent and an acid. Anti-reflective coating films prepared according to the invention exhibit improved properties compared to high molecular weight polymeric anti-reflective coating films. The small molecule anti-reflective coatings have high etch rates and good via fill properties. Photolithographic processes carried out with the inventive material result in freestanding, 110-nm profiles.

    BOTTOM ANTI-REFLECTIVE COATINGS DERIVED FROM SMALL CORE MOLECULES WITH MULTIPLE EPOXY MOIETIES
    4.
    发明申请
    BOTTOM ANTI-REFLECTIVE COATINGS DERIVED FROM SMALL CORE MOLECULES WITH MULTIPLE EPOXY MOIETIES 审中-公开
    从具有多种环氧基团的小核分子衍生的底部抗反射涂层

    公开(公告)号:WO2004034435A3

    公开(公告)日:2005-07-28

    申请号:PCT/US0332091

    申请日:2003-10-07

    Abstract: Novel anti-reflective coatings comprising small molecules (e.g., less than about 5,000 g/mole) in lieu of high molecular weight polymers and methods of using those coatings are provided. In one embodiment, aromatic carboxylic acids are used as the chromophores, and the resulting compounds are blended with a crosslinking agent and an acid. Anti-reflective coating films prepared according to the invention exhibit improved properties compared to high molecular weight polymeric anti-reflective coating films. The small molecule anti-reflective coatings have high etch rates and good via fill properties. Photolithographic processes carried out with the inventive material result in freestanding, 110-nm profiles.

    Abstract translation: 提供了包含小分子(例如小于约5,000g / mol)代替高分子量聚合物的新型抗反射涂层以及使用这些涂层的方法。 在一个实施方案中,使用芳族羧酸作为发色团,并将所得化合物与交联剂和酸共混。 与高分子量聚合物抗反射涂膜相比,根据本发明制备的抗反射涂膜显示出改进的性能。 小分子抗反射涂层具有高蚀刻速率和良好的通孔填充性能。 使用本发明材料进行的光刻工艺产生独立的110nm轮廓。

    DEVELOPER-SOLUBLE MATERIALS AND METHODS OF USING THE SAME IN VIA-FIRST DUAL DAMASCENE APPLICATIONS
    5.
    发明申请
    DEVELOPER-SOLUBLE MATERIALS AND METHODS OF USING THE SAME IN VIA-FIRST DUAL DAMASCENE APPLICATIONS 审中-公开
    可开发的可溶性材料及其在第一个双重DASASCENE应用中的使用方法

    公开(公告)号:WO2005038878A2

    公开(公告)日:2005-04-28

    申请号:PCT/US2004034495

    申请日:2004-10-15

    CPC classification number: G03F7/091 H01L21/312 H01L21/76808

    Abstract: Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflective coatings are soluble in standard aqueous developers, and are useful for patterning via holes and trenches on semiconductor substrates in a dual damascene patterning scheme. In one embodiment, compositions composed of polyamic acids can be used as gap-filling (via-filling) materials having no anti-reflective function in a copper dual damascene process to improve iso-dense fill bias across different via arrays. In another embodiment, the same composition can be used for anti-reflective purposes, wherein the photoresist can be directly coated over the rescessed surface, while it also acts as a fill material to planarize via holes on the substrate. The compositions described here are particular suitable for use at exposure wavelengths of less than about 370 nm.

    Abstract translation: 提供了基于聚酰胺酸或聚酯平台的湿式凹陷(开发)间隙填充和底部抗反射涂层。 当提供热能时,聚酰胺酸平台允许酰亚胺化形成聚酰亚胺。 间隙填充和底部抗反射涂层可溶于标准含水显影剂,并且可用于在双镶嵌图案化方案中图案化半导体衬底上的通孔和沟槽。 在一个实施方案中,由聚酰胺酸组成的组合物可用作在铜双镶嵌工艺中不具有抗反射功能的间隙填充(通孔填充)材料,以改善穿过不同通孔阵列的等密度填充偏压。 在另一个实施方案中,相同的组合物可以用于抗反射目的,其中光致抗蚀剂可以直接涂覆在被加工的表面上,同时它还用作填充材料以平坦化基底上的通孔。 这里描述的组合物特别适用于小于约370nm的曝光波长。

    DEVELOPER-SOLUBLE MATERIALS AND METHODS OF USING THE SAME IN VIA-FIRST DUAL DAMASCENE APPLICATIONS
    6.
    发明公开
    DEVELOPER-SOLUBLE MATERIALS AND METHODS OF USING THE SAME IN VIA-FIRST DUAL DAMASCENE APPLICATIONS 有权
    显影液可溶性材料和使用这个命令HOLE第一双镶嵌应用程序的方法

    公开(公告)号:EP1673801A4

    公开(公告)日:2010-04-07

    申请号:EP04795633

    申请日:2004-10-15

    CPC classification number: G03F7/091 H01L21/312 H01L21/76808

    Abstract: Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflective coatings are soluble in standard aqueous developers, and are useful for patterning via holes and trenches on semiconductor substrates in a dual damascene patterning scheme. In one embodiment, compositions composed of polyamic acids can be used as gap-filling (via-filling) materials having no anti-reflective function in a copper dual damascene process to improve iso-dense fill bias across different via arrays. In another embodiment, the same composition can be used for anti-reflective purposes, wherein the photoresist can be directly coated over the recessed surface, while it also acts as a fill material to planarize via holes on the substrate. The compositions described here are particularly suitable for use at exposure wavelengths of less than about 370 nm.

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