公开(公告)号：US20250041987A1

公开(公告)日：2025-02-06

申请号：US18785044

申请日：2024-07-26

Applicant: EBARA CORPORATION

Inventor： Masaki KINOSHITA ,  Yoichi SHIOKAWA ,  Keita TANOUE

IPC: B24B37/013

Abstract: A polishing apparatus includes: a polishing table configured to support a polishing pad having a through-hole; an optical film-thickness measuring system having an optical sensor head mounted to the polishing table; a transparent-liquid inlet passage configured to supply a transparent liquid to the through-hole; and a light-emitting-side transparent-liquid outlet passage and a light-receiving-side transparent-liquid outlet passage communicating with the through-hole. The optical sensor head has a light-emitting surface configured to emit light obliquely upward and a light-receiving surface configured to receive reflected light from the workpiece, and the light-emitting surface faces the light-emitting-side transparent-liquid outlet passage, and the light-receiving surface faces the light-receiving-side transparent-liquid outlet passage.

公开(公告)号：US20240278378A1

公开(公告)日：2024-08-22

申请号：US18544073

申请日：2023-12-18

Applicant: EBARA CORPORATION

Inventor： Yoichi SHIOKAWA ,  Masaki KINOSHITA ,  Yuki WATANABE ,  Toshifumi KIMBA ,  Keita TANOUE

IPC: B24B37/005 ,  B24B37/20

CPC classification number: B24B37/005 ,  B24B37/20

Abstract: A polishing apparatus that can improve an accuracy of position coordinates associated with a measured value of film thickness is disclosed. The polishing apparatus includes: a pad-thickness measuring device configured to measure a thickness of the polishing pad; an optical film-thickness measuring device configured to emit light obliquely to the substrate, and determine measured values of film thickness at measurement points; and a controller configured to associates the measured values of the film thickness with measurement coordinates indicating positions of the measurement points. The controller is configured to determine amount of movement of the measurement coordinates corresponding to a measured value of the thickness of the polishing pad based on correlation data indicating a relationship between the thickness of the polishing pad and the amount of movement of the measurement coordinates; and correct the measurement coordinates associated with the measured values of the film thickness based on the determined amount of movement of the measurement coordinates.

公开(公告)号：US20150266159A1

公开(公告)日：2015-09-24

申请号：US14664691

申请日：2015-03-20

Applicant: EBARA CORPORATION

Inventor： Yoichi SHIOKAWA ,  Keita YAGI ,  Yoichi KOBAYASHI

IPC: B24B37/005 ,  B24B49/04 ,  H01L21/66 ,  B24B37/04 ,  H01L21/304 ,  H01L21/67

CPC classification number: B24B37/005 ,  B24B37/042 ,  B24B49/04 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

Abstract: The polishing device includes an edge chamber that presses the surface to be polished against the polishing pad by pressing a back side of the surface to be polished of the wafer, a thickness measuring unit that estimates a remaining film profile of the surface to be polished of the wafer in realtime during polishing, and a closed loop control device that controls a pressing force on the back side of the surface to be polished by the edge chamber in accordance with a measurement result by the thickness measuring unit during polishing. The closed loop control device controls not only the pressing by the edge chamber during polishing, but also the pressure of a retainer ring as a periphery of the edge chamber affecting the pressing of the surface to be polished against the polishing pad.

Abstract translation: 抛光装置包括：边缘室，其通过按压晶片的待抛光表面的背面将待抛光表面压靠抛光垫;厚度测量单元，其估计要抛光表面的剩余膜轮廓 在抛光期间实时地实现晶片，以及闭环控制装置，其根据研磨期间的厚度测量单元的测量结果来控制由边缘室根据待抛光表面的背侧的按压力。 闭环控制装置不仅控制抛光期间边缘室的按压，而且控制作为边缘室的周边的保持环的压力，从而影响待抛光表面对抛光垫的冲压。

公开(公告)号：US20240181594A1

公开(公告)日：2024-06-06

申请号：US18554643

申请日：2022-01-17

Applicant: EBARA CORPORATION

Inventor： Masashi KABASAWA ,  Toshimitsu SASAKI ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Yuki WATANABE ,  Nachiketa CHAUHAN

IPC: B24B37/015 ,  B24B37/013 ,  B24B49/04 ,  B24B49/14

CPC classification number: B24B37/015 ,  B24B37/013 ,  B24B49/04 ,  B24B49/14

Abstract: The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad.

公开(公告)号：US20210229235A1

公开(公告)日：2021-07-29

申请号：US17229106

申请日：2021-04-13

Applicant: EBARA CORPORATION

Inventor： Tadakazu SONE ,  Yasuyuki MOTOSHIMA ,  Toru MARUYAMA ,  Katsutoshi ONO ,  Yoichi SHIOKAWA

IPC: B24B37/015 ,  B24B37/10 ,  B24B37/34 ,  B24B55/02 ,  B24B37/04

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

公开(公告)号：US20170352573A1

公开(公告)日：2017-12-07

申请号：US15615475

申请日：2017-06-06

Applicant: EBARA CORPORATION

Inventor： Zhongxin WEN ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI ,  Suguru SAKUGAWA ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Itsuki KOBATA ,  Tomohiko TAKEUCHI

IPC: H01L21/687 ,  G03F7/20 ,  B24B41/06 ,  H01L21/683 ,  B24B37/04

CPC classification number: H01L21/68757 ,  B24B37/04 ,  B24B41/068 ,  G03F7/70691 ,  H01L21/67248 ,  H01L21/6838 ,  H01L21/68714

Abstract: It is an object of the present invention to provide a high-flatness substrate holding table. According to a first aspect, a substrate processing apparatus is provided, and such a substrate processing apparatus includes a table for holding a substrate, a resin film attached to a top surface of the table and a heater provided inside the table, and the top surface of the table is formed of ceramics, the top surface of the table includes an opening connectable to a vacuum source, the resin film is formed of polyimide, and a through hole is formed at a position corresponding to the opening of the table when attached to the top surface of the table.

公开(公告)号：US20250073847A1

公开(公告)日：2025-03-06

申请号：US18816123

申请日：2024-08-27

Applicant: EBARA CORPORATION

Inventor： Keita YAGI ,  Yoichi SHIOKAWA ,  Yuta SUZUKI

IPC: B24B49/02 ,  B24B49/10 ,  G01B7/06

Abstract: Provided is a film thickness signal processing apparatus that improves in accuracy of a film-thickness distribution within a measurement range. The film thickness signal processing apparatus includes a receiver and a corrector. The receiver receives sensor data output from an eddy current sensor and generates first film thickness data 168 and second film thickness data 172. The corrector corrects the first film thickness data 168 and the second film thickness data 172 generated by the receiver. The corrector obtains corrected film thickness data 166 based on a size of the measurement range 174, 176 on the polishing object as a measurement target in a single measurement by the eddy current sensor, the first film thickness data 168 measured at a first measurement point 146 on the polishing object, and the second film thickness data 172 measured at a second measurement point 148 on the polishing object. A distance between the first measurement point 146 and the second measurement point 148 is equal to or less than the size of the measurement range 174, 176.

公开(公告)号：US20240359290A1

公开(公告)日：2024-10-31

申请号：US18642397

申请日：2024-04-22

Applicant: EBARA CORPORATION

Inventor： Keita YAGI ,  Toshimitsu SASAKI ,  Yoichi SHIOKAWA ,  Yuki WATANABE ,  Masashi KABASAWA

IPC: B24B49/04 ,  B24B49/12

CPC classification number: B24B49/04 ,  B24B49/12

Abstract: A polishing method includes: during polishing of the workpiece, creating a reference spectrum history and a monitoring spectrum history by repeatedly producing a reference spectrum and a monitoring spectrum at two points on the workpiece; calculating a plurality of reference history differences that are differences between a latest monitoring spectrum and a plurality of reference spectra in the reference spectrum history; calculating a plurality of monitoring history differences that are differences between a latest reference spectrum and a plurality of monitoring spectra in the monitoring spectrum history; calculating a film-thickness difference between a monitoring point and a reference point based on a local minimum point of a reference history difference or a monitoring history difference.

公开(公告)号：US20190168354A1

公开(公告)日：2019-06-06

申请号：US16268984

申请日：2019-02-06

Applicant: EBARA CORPORATION

Inventor： Tadakazu SONE ,  Yasuyuki MOTOSHIMA ,  Toru MARUYAMA ,  Katsutoshi ONO ,  Yoichi SHIOKAWA

IPC: B24B37/015 ,  B24B37/04 ,  B24B37/10 ,  B24B37/34 ,  B24B55/02

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

公开(公告)号：US20180211849A1

公开(公告)日：2018-07-26

申请号：US15745694

申请日：2016-07-06

Applicant: EBARA CORPORATION

Inventor： Itsuki KOBATA ,  Keita YAGI ,  Yoichi SHIOKAWA

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/66

CPC classification number: H01L21/6708 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/14 ,  H01L22/26

Abstract: The invention performs optimum processing even when process requirements vary in the middle of a substrate processing process. A method is provided whereby a substrate is processed by causing the substrate and a catalyst to contact each other in the presence of a processing liquid. Such a method includes a step of processing the substrate under a predetermined processing condition for processing the substrate at a high speed and a step of changing the processing condition so as to process the substrate at a low speed during processing of the same substrate.