公开(公告)号：US20240088331A1

公开(公告)日：2024-03-14

申请号：US18389428

申请日：2023-11-14

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  De-Shan KUO

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/10 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L25/0756 ,  H01L33/10 ,  H01L33/50 ,  H01L33/60

Abstract: A light-emitting device includes a light-emitting stack and a distributed Bragg reflection structure formed on one side light-emitting stack. The distributed Bragg reflection structure includes a first film stack, a second film stack and a conversion layer between the first and the second film stacks; wherein the first film stack includes a plurality of first dielectric-layer pairs consecutively arranged, the second film stack includes a plurality of second dielectric-layer pairs consecutively arranged, each of the first dielectric-layer pairs and each of the second dielectric-layer pairs respectively includes a first dielectric layer having an optical thickness and a second dielectric layer having an optical thickness; wherein the second dielectric layer has a refractive index higher than that of the first dielectric layer; wherein in each of the first dielectric-layer pairs of the first film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer has a first ratio, and in each of the second dielectric-layer pairs of the second film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer has a second ratio; wherein the first ratio is greater than the second ratio; wherein the conversion layer has an optical thickness ranging between that of the first dielectric layer of one of the first dielectric-layer pairs of the first film stack and that of the first dielectric layer of one of the second dielectric-layer pairs of the second film stack.

公开(公告)号：US20240204131A1

公开(公告)日：2024-06-20

申请号：US18540278

申请日：2023-12-14

Applicant: EPISTAR CORPORATION

Inventor： Jan-Way CHIEN ,  Heng-Ying CHO ,  Wei-Ting CHANG

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0095 ,  H01L33/38 ,  H01L33/44 ,  H01L25/167

Abstract: A manufacturing method for a light-emitting device includes: forming a semiconductor stack; forming an electrode on the semiconductor stack, wherein the electrode includes a first top surface and a side surface; forming an insulating stack on the semiconductor stack and the electrode, wherein the insulating stack includes a plurality of first sub-layers with a first refractive index and a plurality of second sub-layers with a second refractive index alternately stacked; removing a portion of the insulating stack to expose the first top surface, leaving another portion of the insulating stack having a second top surface surrounding the first top surface, and a level of the second top surface is lower than or equal to that of the first upper surface; and forming an electrode pad on the insulating stack, wherein the electrode pad contacts the first top surface.

公开(公告)号：US20220149234A1

公开(公告)日：2022-05-12

申请号：US17584004

申请日：2022-01-25

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  De-Shan KUO

IPC: H01L33/10 ,  H01L25/075

Abstract: A light-emitting device includes a substrate having a first surface and a second surface opposite to the first surface; a light-emitting stack formed on the first surface; and a distributed Bragg reflection structure formed on the second surface, wherein the distributed Bragg reflection structure includes a first film stack and a second film stack; wherein the first film stack includes a plurality of first dielectric-layer pairs consecutively arranged, the second film stack includes a plurality of second dielectric-layer pairs consecutively arranged, each of the first dielectric-layer pairs and each of the second dielectric-layer pairs respectively includes a first dielectric layer having an optical thickness and a second dielectric layer having an optical thickness; wherein the second dielectric layer has a refractive index higher than that of the first dielectric layer; wherein in each of the first dielectric-layer pairs of the first film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a first ratio, and in each of the second dielectric-layer pairs of the second film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a second ratio;
wherein the first ratio is greater than the second ratio; and wherein the first film stack is farther from the second surface of the substrate than the second film stack.

公开(公告)号：US20240162382A1

公开(公告)日：2024-05-16

申请号：US18506698

申请日：2023-11-10

Applicant: EPISTAR CORPORATION

Inventor： Wu-Tsung LO ,  Chih-Hao CHEN ,  Wei-Che WU ,  Heng-Ying CHO ,  Tsun-Kai KO

IPC: H01L33/22 ,  H01L33/10 ,  H01L33/62

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/62

Abstract: The present disclosure provides a light-emitting package. The light-emitting package includes a main body, a cavity disposed in the cavity, a base plane in the cavity and a light-emitting element. The light-emitting element is disposed in the cavity and connected to the base plane. The light-emitting element includes a substrate and a semiconductor stack on the substrate. The substrate includes a side wall, and the side wall incudes a first cutting trace. The main body includes a step portion disposed in the cavity and it surrounds the light-emitting element. The step portion comprises a first height relative to base plane, and the first cutting trace comprises a second height relative to the base plane. The second height is greater than the first height.

公开(公告)号：US20220037556A1

公开(公告)日：2022-02-03

申请号：US17389467

申请日：2021-07-30

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Li-Yu SHEN ,  Yu-Yi HUNG ,  Chen OU ,  Li-Ming CHANG

IPC: H01L33/20 ,  H01L33/10 ,  H01L27/15 ,  H01L33/38

Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the stack, including a first surface facing the stack and a second surface opposite to the first surface. The filter includes pairs of layers with different refractive indexes alternately stacked, and a portion of the first light is transmitted by the filter. The light emitting device emits a second light including the portion of the first light, and the second light includes a first directional part with a first FWHM and a second directional part with a second FWHM. The first directional part has a first angle with a normal direction of the second surface in a range of 45-90 degrees, the second directional part has a second angle with the normal direction of the second surface in a range of 0-30 degrees, and the second FWHM is smaller than the first FWHM.

公开(公告)号：US20210408338A1

公开(公告)日：2021-12-30

申请号：US17354922

申请日：2021-06-22

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Li-Yu SHEN ,  Chih-Hao CHEN ,  Keng-Lin CHUANG

IPC: H01L33/44 ,  H01L33/10

Abstract: A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength λ; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.

公开(公告)号：US20250048792A1

公开(公告)日：2025-02-06

申请号：US18927581

申请日：2024-10-25

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Li-Yu SHEN ,  Yu-Yi HUNG ,  Chen OU ,  Li-Ming CHANG

IPC: H01L33/20 ,  H01L27/15 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting device including a semiconductor stack generating a first light, and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface. The filter includes pairs of layers with different refractive indexes alternately stacked. A portion of the first light is transmitted by the filter. The light emitting device emits a second light including the portion of the first light, and the second light includes a first directional part with a first FWHM and a second directional part with a second FWHM smaller than the first FWHM. The first directional part has a first angle with a normal direction of the second surface in a range of 45-90 degrees and the second directional part having a second angle with the normal direction of the second surface in a range of 0-30 degrees.

公开(公告)号：US20240170610A1

公开(公告)日：2024-05-23

申请号：US18516747

申请日：2023-11-21

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Wei-Ting CHANG ,  Yi-Hung LIN

IPC: H01L33/10 ,  H01L27/15 ,  H01L33/22 ,  H01L33/62

CPC classification number: H01L33/10 ,  H01L27/153 ,  H01L33/22 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor stack, an insulating reflective structure having an opening, and an electrode located on the insulating reflective structure and filled in the opening to electrically connect to the semiconductor stack. The semiconductor stack having includes a main surface, and a side surface inclined to the main surface. The light-emitting device has a dominant wavelength and a peak wavelength. The insulating reflective structure includes: a first part located on the main surface and having a first thickness; and a second part located on the side surface and having a second thickness different from the first thickness. The second part of the insulating reflective structure has a reflectivity of more than 90% for the dominant wavelength or the peak wavelength within an incident angle of 0° to 30°.

公开(公告)号：US20240162375A1

公开(公告)日：2024-05-16

申请号：US18498722

申请日：2023-10-31

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Yong-Yang CHEN ,  Yu-Ling LIN ,  Wei-Chen TSAO

IPC: H01L33/10 ,  H01L33/36

CPC classification number: H01L33/10 ,  H01L33/36

Abstract: A light-emitting device comprises a first semiconductor layer and a semiconductor mesa formed on the first semiconductor layer, wherein the first semiconductor layer comprises a first sidewall and a first semiconductor layer first surface surrounding the semiconductor mesa, and the semiconductor mesa comprises a second sidewall; and a first reflective structure comprising a first reflective portion covering the first sidewall and a second reflective portion covering the second sidewall, wherein the first reflective portion and the second reflective portion are connected to form a first reflective structure outer opening to expose the first semiconductor layer first surface in a top view of the light-emitting device.

公开(公告)号：US20200235267A1

公开(公告)日：2020-07-23

申请号：US16749536

申请日：2020-01-22

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  De-Shan KUO

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/10

Abstract: A light-emitting device includes a substrate, having a first surface and second surface opposite to the first surface; a light-emitting stack, formed on the first surface of the substrate, the light-emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer, wherein the active layer is formed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a distributed Bragg reflection structure (DBR), formed on the second surface of the substrate, including a plurality of dielectric-layer pair formed sequentially on the second surface, wherein each of the dielectric-layer pairs includes respectively a first dielectric layer having a first optical thickness and a second dielectric layer having a second optical thickness, and wherein from the second surface, the first dielectric layer of each of the dielectric-layer pairs is thicker than the first dielectric layer of the adjacent previous dielectric-layer pair.