公开(公告)号：US20230215981A1

公开(公告)日：2023-07-06

申请号：US18087729

申请日：2022-12-22

Applicant: EPISTAR CORPORATION

Inventor： Jan-Way CHIEN

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/10

CPC classification number: H01L33/382 ,  H01L33/62 ,  H01L33/10

Abstract: A light-emitting device includes a semiconductor stack, a first electrode, a first electrode pad, and second electrode pads. The semiconductor stack includes a first semiconductor layer, a first mesa formed on the first semiconductor layer, and second mesas spaced apart from each other and formed on the first semiconductor layer and separated from the first mesa. The first mesa and the second mesas respectively include a second semiconductor layer on having a second conductivity type different from a first conductivity type of the semiconductor stack. The first electrode covers and contacts the first mesa and is electrically connected to the first semiconductor layer. The first electrode pad is formed on the first mesa and is connected to the first electrode layer. The second electrode pads are formed on the second mesas, and are electrically connected to the second semiconductor layer of each of the second mesas.

公开(公告)号：US20240203920A1

公开(公告)日：2024-06-20

申请号：US18537508

申请日：2023-12-12

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Shih-An LIAO ,  Jan-Way CHIEN

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/0347 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05557 ,  H01L2224/05624 ,  H01L2224/11515 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/1403

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first electrode and a second electrode disposed on a substrate, a first conductive bump disposed on the first electrode, and a second conductive bump disposed on the second electrode, wherein, the first conductive bump has a first convex top surface, the second conductive bump has a second convex top surface, and the top of the first convex top surface and the top of the second convex top surface substantially have a same horizontal height. The composition of the first electrode includes a first metal. The composition of the first conductive bump includes the first metal and a second metal. The content of the first metal in the first conductive bump is gradually decreased in a direction away from the first electrode.

公开(公告)号：US20240204131A1

公开(公告)日：2024-06-20

申请号：US18540278

申请日：2023-12-14

Applicant: EPISTAR CORPORATION

Inventor： Jan-Way CHIEN ,  Heng-Ying CHO ,  Wei-Ting CHANG

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0095 ,  H01L33/38 ,  H01L33/44 ,  H01L25/167

Abstract: A manufacturing method for a light-emitting device includes: forming a semiconductor stack; forming an electrode on the semiconductor stack, wherein the electrode includes a first top surface and a side surface; forming an insulating stack on the semiconductor stack and the electrode, wherein the insulating stack includes a plurality of first sub-layers with a first refractive index and a plurality of second sub-layers with a second refractive index alternately stacked; removing a portion of the insulating stack to expose the first top surface, leaving another portion of the insulating stack having a second top surface surrounding the first top surface, and a level of the second top surface is lower than or equal to that of the first upper surface; and forming an electrode pad on the insulating stack, wherein the electrode pad contacts the first top surface.

公开(公告)号：US20240405054A1

公开(公告)日：2024-12-05

申请号：US18679369

申请日：2024-05-30

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Chih-Ming WANG ,  Jan-Way CHIEN ,  Hui-Ching FENG ,  Yu-Chi WANG ,  Hsia-Ching CHENG

IPC: H01L27/15 ,  H01L25/13 ,  H01L33/50

Abstract: A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.