公开(公告)号：DE3277344D1

公开(公告)日：1987-10-22

申请号：DE3277344

申请日：1982-05-28

Applicant: IBM

Inventor： BAISE ARNOLD IVAN ,  CZORNYJ GEORGE ,  WU ANTHONY WAI

IPC: H01L23/29 ,  G03F7/025 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/312 ,  H01L23/31 ,  H01L21/56 ,  G03C1/68

Abstract: A protective coating is formed on an integrated circuit device by coating the device with a solution of acetylene terminated, branched polyphenylene prepolymer material and heating the material to form a thermoset crosslinked polymer layer. Selectively patterned portions may be provided when, after the coating step and prior to the heating step, the steps of imagewise exposure to radiation and rinsing with an organic solvent are carried out.

公开(公告)号：DE3275632D1

公开(公告)日：1987-04-16

申请号：DE3275632

申请日：1982-07-30

Applicant: IBM

Inventor： BAISE ARNOLD IVAN ,  BURNS JOHN MARTIN ,  SACHDEV HARBANS SINGH

IPC: C23C14/02 ,  B05D7/24 ,  C08F2/52 ,  C08F30/02 ,  C08J7/00 ,  C23C14/04 ,  H01L21/312 ,  B05D3/00 ,  B05D1/00

公开(公告)号：DE68923717T2

公开(公告)日：1996-04-18

申请号：DE68923717

申请日：1989-02-28

Applicant: IBM

Inventor： BAISE ARNOLD IVAN ,  CASEY JON ALFRED ,  CLARKE DAVID RICHARD ,  DIVAKARUNI RENUKA SHASTRI ,  DUNKEL WERNER ERNEST ,  HUMENIK JAMES NOEL ,  KANDETZKE STEVEN MICHAEL ,  KIRBY DANIEL PATRICK ,  KNICKERBOCKER JOHN ULRICH ,  MATTS AMY TRESTMAN ,  TAKACS MARK ANTHONY ,  WIGGINS LOVELL BERRY

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/15 ,  H01L23/52

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

公开(公告)号：DE68923717D1

公开(公告)日：1995-09-14

申请号：DE68923717

申请日：1989-02-28

Applicant: IBM

Inventor： BAISE ARNOLD IVAN ,  CASEY JON ALFRED ,  CLARKE DAVID RICHARD ,  DIVAKARUNI RENUKA SHASTRI ,  DUNKEL WERNER ERNEST ,  HUMENIK JAMES NOEL ,  KANDETZKE STEVEN MICHAEL ,  KIRBY DANIEL PATRICK ,  KNICKERBOCKER JOHN ULRICH ,  MATTS AMY TRESTMAN ,  TAKACS MARK ANTHONY ,  WIGGINS LOVELL BERRY

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/15 ,  H01L23/52

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.