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    Pixel sensor cell of variable dynamic range, design structure and method
    1.
    发明专利
    Pixel sensor cell of variable dynamic range, design structure and method 有权
    可变动态范围的像素传感器单元，设计结构和方法

    公开(公告)号：JP2010233216A

    公开(公告)日：2010-10-14

    申请号：JP2010049341

    申请日：2010-03-05

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： ELLIS-MONAGHAN JOHN JOSEPH ,  MUSANTE CHARLES FRANCIS ,  JAFFE MARK D

    IPC: H04N5/335 ,  H01L27/146

    CPC classification number: H04N5/37452 ,  H01L27/14609 ,  H04N5/35581 ,  H04N5/3575

    Abstract: PROBLEM TO BE SOLVED: To provide a pixel sensor cell enhanced in dynamic range ability.
    SOLUTION: The pixel sensor cell including a column circuit, a design structure for fabricating the pixel sensor cell including the column circuit and a method for operating the pixel sensor cell including the column circuit are predicated upon the measurement of multiple reference data point and signal data point pairs from a floating diffusion at a variable capacitance. The variable capacitance is provided by excluding or including a transfer gate transistor capacitance in addition to a floating diffusion capacitance. Such a variable capacitance provides variable dynamic ranges for the pixel sensor cell including the column circuit.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供增强动态范围能力的像素传感器单元。 解决方案：包括列电路的像素传感器单元，用于制造包括列电路的像素传感器单元的设计结构和用于操作包括列电路的像素传感器单元的方法基于多个参考数据点的测量 并以可变电容从浮动扩散信号数据点对。 通过排除或包括传输栅极晶体管电容以及浮动扩散电容来提供可变电容。 这种可变电容为包括列电路的像素传感器单元提供了可变的动态范围。 版权所有（C）2011，JPO＆INPIT

    Pixel sensor cell including light shield and method for fabricating the same
    2.
    发明专利
    Pixel sensor cell including light shield and method for fabricating the same 审中-公开
    像素传感器单元包括光屏蔽及其制造方法

    公开(公告)号：JP2010212668A

    公开(公告)日：2010-09-24

    申请号：JP2010025483

    申请日：2010-02-08

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： JAFFE MARK D ,  GAMBINO JEFFREY P ,  ELLIS-MONAGHAN JOHN JOSEPH ,  RASSEL RICHARD JOHN

    IPC: H01L27/146 ,  H01L27/14 ,  H04N5/335 ,  H04N101/00

    CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/1464

    Abstract: PROBLEM TO BE SOLVED: To provide CMOS image sensor pixel sensor cells, methods for fabricating the pixel sensor cells, and design structures for fabricating the pixel sensor cells. SOLUTION: The CMOS image sensor cells are designed to allow for back side illumination in global shutter mode by providing light shielding from back side illumination of at least one transistor within each pixel sensor cell. In a first particular generalized embodiment, a light blocking layer is located and formed interposed between a first semiconductor layer including a photoactive region and a second semiconductor layer including at least a second transistor or a floating diffusion region shielded by the light blocking layer. In a second generalized embodiment, a thin film transistor and a metal-insulator-metal capacitor are used in place of the floating diffusion region, and are arranged, shielded in a dielectric-isolated metallization stack over a carrier substrate. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供CMOS图像传感器像素传感器单元，用于制造像素传感器单元的方法以及用于制造像素传感器单元的设计结构。 解决方案：CMOS图像传感器单元被设计成通过在每个像素传感器单元内提供来自至少一个晶体管的背面照明的光屏蔽来允许在全局快门模式中进行背面照明。 在第一特定广义实施例中，遮光层位于包括光活性区域的第一半导体层和至少包括第二晶体管或由遮光层屏蔽的浮动扩散区域的第二半导体层之间并形成。 在第二广义实施例中，使用薄膜晶体管和金属 - 绝缘体 - 金属电容器来代替浮动扩散区域，并且被布置成在载体衬底上的介电隔离金属化堆叠中被屏蔽。 版权所有（C）2010，JPO＆INPIT

    Image sensor and method of manufacturing the same
    3.
    发明专利
    Image sensor and method of manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：JP2011054963A

    公开(公告)日：2011-03-17

    申请号：JP2010186851

    申请日：2010-08-24

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： GAMBINO JEFFREY P ,  ELLIS-MONAGHAN JOHN JOSEPH ,  ADKISSON JAMES WILLIAM ,  LEIDY ROBERT KENNETH

    IPC: H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685

    Abstract: PROBLEM TO BE SOLVED: To provide a solid-state image sensor and a method of manufacturing the same. SOLUTION: A solid-state image sensor has a substrate on which a photosensitive region is provided. In the solid-state image sensor, an nonuniform reflection layer is arranged, on a side opposite to the incidence side of the emitted light of the photosensitive region. The nonuniform reflecting layer has a shape for reflecting an incident emitted light that is not captured by one photosensitive region at first to return it to the photosensitive area, whereas which does not reflect the incident emitted light that is not captured by the one photosensitive region, at first, to other photosensitive region provided adjacent to the one photosensitive region on the substrate. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种固态图像传感器及其制造方法。 解决方案：固态图像传感器具有设置有感光区域的基板。 在固态图像传感器中，在与感光区域的发射光的入射侧相反的一侧上布置不均匀的反射层。 不均匀反射层具有用于反射未被一个感光区域捕获的入射发射光首先返回到感光区域的形状，而不反射未被一个感光区域捕获的入射发射光， 首先是与衬底上的一个感光区域相邻设置的其它感光区域。 版权所有（C）2011，JPO＆INPIT

    Pixel sensor cell and method of manufacturing the same (photodiode of cmos imaging device having increased capacitance)
    5.
    发明专利
    Pixel sensor cell and method of manufacturing the same (photodiode of cmos imaging device having increased capacitance) 有权
    像素传感器单元及其制造方法（具有增加电容的CMOS成像装置的光电二极管）

    公开(公告)号：JP2007221121A

    公开(公告)日：2007-08-30

    申请号：JP2007025034

    申请日：2007-02-05

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： ELLIS-MONAGHAN JOHN JOSEPH ,  PEARSON DALE JONATHAN ,  ADKISSON JAMES WILLIAM ,  DENNIS L ROGERS ,  MARK D JAFFE

    IPC: H01L27/146 ,  H01L31/10

    CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14689 ,  H01L31/035281

    Abstract: PROBLEM TO BE SOLVED: To provide a CMOS image sensor having a photodetector diode formed on the side wall of a deep trench, achieving separation of a collector, and thus simplifying a process.
    SOLUTION: A pixel sensor cell includes a semiconductor substrate having a surface, and a photoelectric element having a non-transversely oriented charge collection area which is formed on the substrate and is completely separated from a physical boundary including the substrate surface. The photoelectric element includes a trench which is formed on the substrate made of a first conductive material and has side walls, a first doped layer which is formed beside at least one of the side walls and is made of a second conductive material, and a second doped layer which is formed between the first doped layer and at least one of the trench side walls and is further formed on the substrate surface. The second doped layer separates the first doped layer from at least one of the trench side walls and the substrate surface.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供一种具有形成在深沟槽的侧壁上的光电检测器二极管的CMOS图像传感器，实现了集电极的分离，从而简化了工艺。 解决方案：像素传感器单元包括具有表面的半导体基板和具有非横向取向的电荷收集区的光电元件，其形成在基板上并与包括基板表面的物理边界完全分离。 光电元件包括​​形成在由第一导电材料制成并具有侧壁的基板上的沟槽，第一掺杂层，其形成在至少一个侧壁旁边并由第二导电材料制成，第二掺杂层 掺杂层，其形成在第一掺杂层和至少一个沟槽侧壁之间，并进一步形成在衬底表面上。 第二掺杂层将第一掺杂层与沟槽侧壁和衬底表面中的至少一个分开。 版权所有（C）2007，JPO＆INPIT

    Bipolar transistor comprising a raised collector pedestal for reduced capacitance
    7.
    发明专利
    Bipolar transistor comprising a raised collector pedestal for reduced capacitance 未知

    公开(公告)号：GB2497177A

    公开(公告)日：2013-06-05

    申请号：GB201220384

    申请日：2012-11-13

    Applicant: IBM

    Inventor： HARAME DAVID L ,  LIU QIZHI ,  PEKARIK JOHN JOSEPH ,  ELLIS-MONAGHAN JOHN JOSEPH ,  ADKISSON JAMES WILLIAM

    IPC: H01L29/08 ,  H01L29/737

    Abstract: A heterojunction bipolar transistor 100 and a method of forming the heterojunction bipolar transistor with a raised collector pedestal 125 in reduced dimension for reduced base-collector junction capacitance. The raised collector pedestal 125 is on the top surface of a substrate 121, 120, 101 and extends vertically through dielectric layer(s) 103, 104. The raised collector pedestal is un-doped or low-doped and is aligned above a sub-collector region 120, 121 contained within the substrate 101 and is narrower than that sub-collector region 120. An intrinsic base layer 105,132/131 is above the raised collector pedestal and the dielectric layer(s) 103, 104. An extrinsic base layer 141 is above the intrinsic base layer 132, 131. Thus, the space between the extrinsic base layer and the sub-collector region is increased. This increased space is filled by dielectric material and the electrical connection between the intrinsic base layer and the sub-collector region is provided by the relatively narrow, un-doped or low-doped, raised collector pedestal. Consequently the base-collector junction capacitance is reduced and the maximum oscillation frequency (fmax) is increased.

    Durch Wachstum nach schnellem Aufschmelzen hergestellter Fotodetektor
    8.
    发明专利
    Durch Wachstum nach schnellem Aufschmelzen hergestellter Fotodetektor 未知

    公开(公告)号：DE112018000637T5

    公开(公告)日：2019-11-14

    申请号：DE112018000637

    申请日：2018-04-10

    Applicant: IBM

    Inventor： KIEWRA EDWARD WILLIAM ,  ORCUTT JASON ,  ELLIS-MONAGHAN JOHN JOSEPH

    IPC: H01L31/0232

    Abstract: Ein Fotodetektor enthält: einen sich über ein Substrat hinweg erstreckenden Lichtwellenleiter aus einem Lichtwellenleitermaterial: eine auf dem Lichtwellenleiter gebildete Isolierschicht mit einer Öffnung, die den Lichtwellenleiter freilegt; eine auf der Isolierschicht und in die Öffnung hinein gebildete Fotodetektorschicht, um einen Kontakt mit dem Lichtwellenleiter herzustellen, wobei die Fotodetektorschicht ein erstes Ende an der Öffnung und ein der Öffnung abgewandtes zweites Ende hat, wobei es sich bei der Fotodetektorschicht um ein Gradientenmaterial des Lichtwellenleitermaterials und des Germaniums handelt, wobei ein Anteil des Lichtwellenleitermaterials im Gradientenmaterial von einem Höchstwert am ersten Ende bis zu einem Mindestwert am zweiten Ende variiert und wobei ein Anteil des Germaniums im Gradientenmaterial von einem Minimalwert am ersten Ende bis zu einem Höchstwert am zweiten Ende variiert; einen Fotodetektorbereich am zweiten Ende; und eine Erweiterung der Fotodetektorschicht, die sich unter einem Winkel von der Fotodetektorschicht am zweiten Ende aus erstreckt.

    Checking layout integrity
    9.
    发明专利
    Checking layout integrity 未知

    公开(公告)号：GB2526796A

    公开(公告)日：2015-12-09

    申请号：GB201409758

    申请日：2014-06-02

    Applicant: IBM

    Inventor： RIVIER MICHEL ,  GABILLARD BERTRAND ,  HAUVILLER PHILIPPE ,  ELLIS-MONAGHAN JOHN JOSEPH

    IPC: G06F17/50

    Abstract: A method of checking layout integrity comprises the steps of receiving inputs defining a plurality of devices for a layout, generating a signature for each device in the layout, when created, from one or more parameters of the device, storing the generated signatures with the layout, receiving the stored layout and signatures, regenerating each signature for each device in the stored layout, and comparing each regenerated signature with the corresponding stored signature. The signature comprises the sum of coordinates, perimeter and area of the devices.

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