公开(公告)号：WO2007131867B1

公开(公告)日：2008-03-06

申请号：PCT/EP2007054077

申请日：2007-04-25

Applicant: IBM ,  IBM UK ,  JAFFE MARK DAVID ,  DALTON TIMOTHY JOSEPH ,  GAMBINO JEFFREY PETER ,  KARTSCHOKE PAUL DAVID ,  STAMPER ANTHONY KENDALL ,  BERNSTEIN KERRY

Inventor： JAFFE MARK DAVID ,  DALTON TIMOTHY JOSEPH ,  GAMBINO JEFFREY PETER ,  KARTSCHOKE PAUL DAVID ,  STAMPER ANTHONY KENDALL ,  BERNSTEIN KERRY

IPC: H01L21/768 ,  H01L27/12

CPC classification number: H01L21/76898 ,  H01L21/768 ,  H01L21/84 ,  H01L23/481 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having wiring levels on opposite sides and a method of fabricating a semiconductor structure having contacts to devices and wiring levels on opposite sides. The method including fabricating a device on a silicon-on-insulator substrate with first contacts to the devices and wiring levels on a first side to the first contacts, removing a lower silicon layer to expose the buried oxide layer, forming second contacts to the devices through the buried oxide layer and forming wiring levels over the buried oxide layer to the second contacts.

Abstract translation: 具有相对侧的布线电平的半导体器件以及制造与相对侧的器件和布线电平接触的半导体结构的方法。 该方法包括在绝缘体上硅衬底上制造器件，其中器件的第一接触和第一侧的第一接触处的布线电平，去除下硅层以暴露所述掩埋氧化物层，形成第二触点到器件 通过掩埋氧化物层形成掩埋氧化物层上方的布线电平到第二触点。

公开(公告)号：EP2024997A4

公开(公告)日：2009-12-16

申请号：EP07797486

申请日：2007-05-16

Applicant: IBM

Inventor： BERNSTEIN KERRY ,  DALTON TIMOTHY JOSEPH ,  GAMBINO JEFFREY PETER ,  JAFFE MARK DAVID ,  KARTSCHOKE PAUL DAVID ,  LUCE STEPHEN ELLINWOOD ,  STAMPER ANTHONY KENDALL

IPC: H01L25/065 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5329 ,  H01L25/50 ,  H01L27/0688 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2007137049A3

公开(公告)日：2008-01-31

申请号：PCT/US2007069002

申请日：2007-05-16

Applicant: IBM ,  BERNSTEIN KERRY ,  DALTON TIMOTHY JOSEPH ,  GAMBINO JEFFREY PETER ,  JAFFE MARK DAVID ,  KARTSCHOKE PAUL DAVID ,  LUCE STEPHEN ELLINWOOD ,  STAMPER ANTHONY KENDALL

Inventor： BERNSTEIN KERRY ,  DALTON TIMOTHY JOSEPH ,  GAMBINO JEFFREY PETER ,  JAFFE MARK DAVID ,  KARTSCHOKE PAUL DAVID ,  LUCE STEPHEN ELLINWOOD ,  STAMPER ANTHONY KENDALL

IPC: H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5329 ,  H01L25/50 ,  H01L27/0688 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure and method of fabricating the structure. The method includes removing the backside silicon (110A and 110B) from two silicon-on- insulator wafers (110A and 100B), respectively, having devices (130A and 130B), respectively, fabricated therein and bonding them back to back utilizing the buried oxide layers (115). Contacts (210) are then formed in the upper wafer (I00B) to devices (130A) in the lower wafer (100A) and wiring levels (170) are formed on the upper wafer (100B). The lower wafer (100A) may include wiring levels (170). The lower wafer (100A) may include landing pads (230) for the contacts. Contacts to the silicon layer (120) of the lower wafer (100A) may be silicided.

Abstract translation: 一种半导体结构及其制造方法。 该方法包括从分别制造在其中的器件（130A和130B）的两个绝缘体上硅晶片（110A和100​​B）去除后侧硅（110A和110B），并使用掩埋氧化物 层（115）。 接触件（210）然后在上晶片（I00B）中形成在下晶片（100A）中的器件（130A），并且布线层（170）形成在上晶片（100B）上。 下晶片（100A）可以包括布线​​层（170）。 下晶片（100A）可以包括用于触点的着陆焊盘（230）。 与下晶片（100A）的硅层（120）的接触可以被硅化。

公开(公告)号：GB2498261A

公开(公告)日：2013-07-10

申请号：GB201223287

申请日：2012-12-21

Applicant: IBM

Inventor： JAFFE MARK DAVID ,  ADKISSON JAMES WILLIAM ,  STAMPER ANTHONY K ,  WOLF RANDY LEE ,  CANDRA PANGLIJEN ,  GAMBINO JEFFERY P ,  DUNBAR THOMAS J

IPC: H01L41/047 ,  H01L41/107 ,  H03H9/02 ,  H03H9/64

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric (PE) filter structure comprising a plurality of electrodes 14, 16 formed on a PE 12. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam 26 formed above the PE substrate and at a location in which, upon actuation, the MEMS beam shorts the PE filter structure by contacting at least one of the plurality of electrodes. The PE filter may be surface acoustic wave (SAW) filter. The SAW filter may comprise input and output transducers comprising interleaved electrodes. The PE filter may be a bulk acoustic wave (BAW) filter. The beam may be perpendicular to the interleaved electrodes and may cover the whole area of the electrodes of at least one filter structure. The structure may be formed using computer aided design. In one embodiment the frequency of a filter may be determined and the beam may be actuated to contact one of the electrodes depending on the frequency.

公开(公告)号：GB2498261B

公开(公告)日：2013-12-11

申请号：GB201223287

申请日：2012-12-21

Applicant: IBM

Inventor： JAFFE MARK DAVID ,  ADKISSON JAMES WILLIAM ,  STAMPER ANTHONY K ,  WOLF RANDY LEE ,  CANDRA PANGLIJEN ,  GAMBINO JEFFERY P ,  DUNBAR THOMAS J

IPC: H01L41/047 ,  H01L41/107 ,  H03H9/02 ,  H03H9/64

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

公开(公告)号：GB2499308A

公开(公告)日：2013-08-14

申请号：GB201300243

申请日：2013-01-08

Applicant: IBM

Inventor： JAFFE MARK DAVID ,  ADKISSON JAMES WILLIAM ,  STAMPER ANTHONY K ,  WOLF RANDY LEE ,  CANDRA PANGLIJEN ,  GAMBINO JEFFERY P ,  DUNBAR THOMAS J

IPC: H03H9/64 ,  H03H3/08 ,  H03H9/145

Abstract: The fingers 22 of a movable electrode of an interdigital transducer (IDT) lie in a cavity above the piezoelectric layer 12 and are moved down to contact the layer 12, between the fingers 14 of a fixed electrode, by applying voltages to electrostatic actuator electrodes 16 or 24. Alternatively, the movable fingers 22 may be formed just above the layer 12 and the actuators used to move the fingers away from the layer 12 or to apply a downward pull-in contact force. The technique allows the switching into circuit of SAW filters without incurring the insertion loss caused by FET switches, or a reduction in Q factor. A SAW filter arrangement may be set to a desired frequency by activating or deactivating selected SAW filters.