公开(公告)号：JP2007059903A

公开(公告)日：2007-03-08

申请号：JP2006221924

申请日：2006-08-16

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： RIEL HEIKE E ,  BEIERLEIN TILMAN A ,  RIESS WALTER HEINRICH ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RUHSTALLER BEAT ,  ALVARADO SANTOS F ,  CRONE BRIAN

IPC: H01L51/50

CPC classification number: H01L51/5012 ,  H01L51/005

Abstract: PROBLEM TO BE SOLVED: To provide an organic electroluminescence device with a reduced deterioration rate and an enhanced efficiency.
SOLUTION: An electroluminescene device comprises a positive electrode, a hole-injection layer, an emission layer including an emitting material, an electron-injection layer, and a negative electrode which are formed sequentially. Furthermore, the emission layer comprises a stabilizing material having an energy-bandgap greater than energy-bandgap of the emitting material.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供具有降低的劣化率和提高的效率的有机电致发光器件。 解决方案：依次形成的正电极，空穴注入层，包括发光材料的发射层，电子注入层和负极的电致发光器件。 此外，发射层包括具有大于发射材料的能带隙的能带隙的稳定材料。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004363104A

公开(公告)日：2004-12-24

申请号：JP2004163993

申请日：2004-06-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： KARG SIEGFRIED F ,  RIEL HEIKE E ,  RIESS WALTER H

IPC: H05B33/10 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/14

CPC classification number: H01L51/0004 ,  H01L51/0541 ,  H01L51/56

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic device having a pattern formed on the surface by deposition materials. SOLUTION: This is related to the method of forming an FET, especially, a high definition color (RGB) display. The forming method of the organic electronic device includes a process in which the deposition materials are heated and pressurized in order to form molten products and a process in which the molten deposition materials are layered on the surface using a phase-change printing technology or spraying technology. The molten deposition materials are coagulated on the surface. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：CA2470206A1

公开(公告)日：2003-07-03

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： WIDMER ROLAND W ,  GERMANN ROLAND W ,  RUHSTALLER BEAT ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  SEIDLER PAUL ,  ALVARADO SANTOS F ,  MUELLER PETER ,  KARG SIEGFRIED F ,  RIESS WALTER ,  DRECHSLER UTE ,  RIEL HEIKE

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and op to- electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

公开(公告)号：CA2470206C

公开(公告)日：2010-03-30

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： ALVARADO SANTOS F ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W

IPC: H05B33/22 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

公开(公告)号：AU2002347506A1

公开(公告)日：2003-07-09

申请号：AU2002347506

申请日：2002-11-26

Applicant: IBM

Inventor： BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W ,  ALVARADO SANTOS F

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer ( 204 ), a nonmetal layer ( 206 ) formed on the conductive layer, a fluorocarbon layer ( 208 ) formed on the nonmetal layer, a structure ( 210 ) formed on the structure. The electrode may further comprise a buffer layer ( 205 ) between the conductive layer and the nonmetal layer.

公开(公告)号：GB2485495A

公开(公告)日：2012-05-16

申请号：GB201200880

申请日：2010-08-30

Applicant: IBM

Inventor： BJOERK MIKAEL T ,  KARG SIEGFRIED F ,  KNOCH JOACHIM ,  RIEL HEIKE E ,  RIESS WALTER H ,  SOLOMON PAUL M

IPC: H01L29/739 ,  H01L29/06

Abstract: An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.