公开(公告)号：JP2004046098A

公开(公告)日：2004-02-12

申请号：JP2003128938

申请日：2003-05-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ALLEN ROBERT DAVID ,  GREGORY BUREITA ,  BROCK PHILLIP ,  DIPIETRO RICHARD A ,  FENZEL-ALEXANDER DEBRA ,  LARSON CARL ,  MEDEIROS DAVID ,  PFEIFFER DIRK ,  SOORIYAKUMARAN RATNAM ,  TRUONG HOA D ,  WALLRAFF GREGORY M

IPC: C08F20/22 ,  C08F220/28 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition containing a polymer having at least one methacrylate monomer and to provide a method of pattering a substrate using the photoresist composition. SOLUTION: The photoresist composition contains a methacrylate monomer of formula 1 where R 1 represents hydrogen (H), a linear or branched 1-20C alkyl group or a semi- or perfluorinated linear or branched 1-20C alkyl group; where R 2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF 3 ) group bonded to each carbon of the substituted aliphatic group or a substituted or unsubstituted aromatic group; and where R 3 represents hydrogen (H), methyl (CH 3 ), trifluoromethyl (CF 3 ), difluoromethyl (CHF 2 ) or fluoromethyl (CH 2 F). COPYRIGHT: (C)2004,JPO

公开(公告)号：AT451433T

公开(公告)日：2009-12-15

申请号：AT06794016

申请日：2006-10-13

Applicant: IBM

Inventor： BROCK PHILIP ,  CHA JENNIFER ,  GIL DARIO ,  LARSON CARL ,  SUNDBERG LINDA ,  WALLRAFF GREGORY

IPC: C09D129/00 ,  C09D131/04 ,  G03F7/00

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.

公开(公告)号：AT474249T

公开(公告)日：2010-07-15

申请号：AT06735757

申请日：2006-02-22

Applicant: IBM

Inventor： ALLEN ROBERT ,  BROCK PHILLIP ,  GIL DARIO ,  HINSBERG WILLIAM ,  LARSON CARL ,  SUNDBERG LINDA ,  WALLRAFF GREGORY

IPC: G03F7/11 ,  G03F7/20

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

公开(公告)号：DE69126439D1

公开(公告)日：1997-07-10

申请号：DE69126439

申请日：1991-01-23

Applicant: IBM

Inventor： BAUM THOMAS ,  LARSON CARL ,  REYNOLDS SCOTT

IPC: C07F1/08 ,  C07F1/10 ,  C07F9/02 ,  C07F9/50 ,  C07F15/00 ,  C23C16/18 ,  C23C16/48 ,  C23C16/50 ,  H01L21/285 ,  H05K3/40

Abstract: Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.