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    Method for forming image in resist, topcoat layer material (immersion lithography contamination gettering layer)
    2.
    发明专利
    Method for forming image in resist, topcoat layer material (immersion lithography contamination gettering layer) 有权
    用于形成耐蚀图像的方法，顶层材料（渗透层析污染捕获层）

    公开(公告)号：JP2006338002A

    公开(公告)日：2006-12-14

    申请号：JP2006142379

    申请日：2006-05-23

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： CORLISS DANIEL A ,  GIL DARIO ,  GOLDFARB DARIO L ,  HOLMES STEVEN J ,  HORAK DAVID VACLAV ,  KIMMEL KURT R ,  PETRILLO KAREN E ,  SHNEYDER DMITRIY I

    IPC: G03F7/11 ,  H01L21/027

    CPC classification number: G03F7/2041 ,  G03F7/11 ,  Y10S430/162

    Abstract: PROBLEM TO BE SOLVED: To prevent interaction between a photoresist layer and an immersion fluid in a immersion lithography system and to prevent contaminants in the immersion fluid from contaminating an integrated circuit being fabricated.
    SOLUTION: The method for forming an image in a photoresist layer includes: a step of providing a substrate; a step (S12) of forming a photoresist layer over the substrate; a step (S16) of forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including contains one or more polymers and one or more cation complexing agents; a step of exposing the photoresist layer to actinic radiation; and a step of removing an exposed region of the photoresist layer or an unexposed region of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents, and a casting solvent.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了防止浸没式光刻系统中的光致抗蚀剂层和浸没流体之间的相互作用并且防止浸没流体中的污染物污染正在制造的集成电路。 解决方案：在光致抗蚀剂层中形成图像的方法包括：提供基板的步骤; 在衬底上形成光致抗蚀剂层的步骤（S12）; 在光致抗蚀剂层上形成污染吸气外涂层的步骤（S16），包含吸污顶层的污染物包含一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于光化辐射的步骤; 以及除去光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域的步骤。 污染吸附顶涂层包括一种或多种聚合物，一种或多种阳离子络合剂和流延溶剂。 版权所有（C）2007，JPO＆INPIT

    4.
    发明专利
    未知

    公开(公告)号：AT451433T

    公开(公告)日：2009-12-15

    申请号：AT06794016

    申请日：2006-10-13

    Applicant: IBM

    Inventor： BROCK PHILIP ,  CHA JENNIFER ,  GIL DARIO ,  LARSON CARL ,  SUNDBERG LINDA ,  WALLRAFF GREGORY

    IPC: C09D129/00 ,  C09D131/04 ,  G03F7/00

    Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.

    6.
    发明专利
    未知

    公开(公告)号：AT474249T

    公开(公告)日：2010-07-15

    申请号：AT06735757

    申请日：2006-02-22

    Applicant: IBM

    Inventor： ALLEN ROBERT ,  BROCK PHILLIP ,  GIL DARIO ,  HINSBERG WILLIAM ,  LARSON CARL ,  SUNDBERG LINDA ,  WALLRAFF GREGORY

    IPC: G03F7/11 ,  G03F7/20

    Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

    7.
    发明专利
    未知

    公开(公告)号：DE602006011049D1

    公开(公告)日：2010-01-21

    申请号：DE602006011049

    申请日：2006-10-13

    Applicant: IBM

    Inventor： BROCK PHILIP JOE ,  CHA JENNIFER ,  GIL DARIO ,  LARSON CARL ERIC ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY

    IPC: C09D129/00 ,  C09D131/04 ,  G03F7/00

    Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.

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