公开(公告)号：DE112020002995T5

公开(公告)日：2022-03-10

申请号：DE112020002995

申请日：2020-06-16

Applicant: IBM

Inventor： KIM JANGWOO ,  NA YOUNG-HYE ,  ALLEN ROBERT

IPC: H01M4/58 ,  H01M4/133 ,  H01M4/136 ,  H01M4/38 ,  H01M4/583 ,  H01M4/66 ,  H01M10/0568 ,  H01M10/0569

Abstract: Eine Batterie umfasst eine Anode, einen Elektrolyten, welcher ein Lösungsmittel und mindestens ein ionenleitendes Salz umfasst, und eine Kathode, welche ein Metallhalogenid-Salz umfasst, das in ein elektrisch leitfähiges Material integriert ist. Der Elektrolyt steht mit der Anode, der Kathode und einem oxidierenden Gas in Kontakt.

公开(公告)号：AT456822T

公开(公告)日：2010-02-15

申请号：AT06778316

申请日：2006-08-21

Applicant: IBM

Inventor： ALLEN ROBERT ,  DIPIETRO RICHARD ,  TRUONG HOA ,  BROCK PHILLIP ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/004 ,  C07J9/00 ,  C07J17/00 ,  G03F7/039

Abstract: A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

公开(公告)号：AT474249T

公开(公告)日：2010-07-15

申请号：AT06735757

申请日：2006-02-22

Applicant: IBM

Inventor： ALLEN ROBERT ,  BROCK PHILLIP ,  GIL DARIO ,  HINSBERG WILLIAM ,  LARSON CARL ,  SUNDBERG LINDA ,  WALLRAFF GREGORY

IPC: G03F7/11 ,  G03F7/20

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.