公开(公告)号：WO2011080016A2

公开(公告)日：2011-07-07

申请号：PCT/EP2010068318

申请日：2010-11-26

Applicant: IBM ,  SANDERS DANIEL PAUL ,  CHENG JOY ,  HINSBERG WILLIAM ,  KIM HO-CHEOL ,  COLBURN MATTHEW ,  HARRER STEFAN ,  HOLMES STEVEN

Inventor： SANDERS DANIEL PAUL ,  CHENG JOY ,  HINSBERG WILLIAM ,  KIM HO-CHEOL ,  COLBURN MATTHEW ,  HARRER STEFAN ,  HOLMES STEVEN

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material.

Abstract translation: 形成包括自组装材料的层状结构的方法包括：在基底上设置非交联光致抗蚀剂层; 将光致抗蚀剂层图案化地暴露于第一辐射; 可选地加热曝光的光致抗蚀剂层; 在第一显影工艺中用含水碱性显影剂显影曝光的光致抗蚀剂层，形成初始图案化的光致抗蚀剂层; 以光学，光学和/或化学方式处理初始图案化的光致抗蚀剂层，从而形成经处理的图案化的光刻胶层，其包含设置在第一衬底表面上的非交联处理的光致抗蚀剂; 在经处理​​的图案化光刻胶层上浇铸取向控制材料在第一溶剂中的溶液，并除去第一溶剂，形成取向控制层; 加热所述取向控制层以有效地将所述取向控制材料的一部分粘合到第二基板表面; 在第二显影过程中除去至少一部分经处理的光致抗蚀剂和任选的任何未结合的取向控制材料，从而形成用于自组装的预图案; 可选地加热预图案; 将能够自组装的溶解在第二溶剂中的材料的溶液浇铸在预图案上并除去第二溶剂; 并且允许铸造材料通过任选的加热和/或退火自组装，从而形成包括自组装材料的层状结构。

公开(公告)号：GB2485493A

公开(公告)日：2012-05-16

申请号：GB201200163

申请日：2010-08-04

Applicant: IBM

Inventor： BANGSARUNTIP SARUNYA ,  EDELSTEIN DANIEL C ,  KIM HO-CHEOL ,  KOESTER STEVEN ,  SOLOMON PAUL M ,  HINSBERG WILLIAM

IPC: H01L21/311 ,  H01L21/44 ,  H01L21/768

Abstract: An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.

公开(公告)号：GB2485941A

公开(公告)日：2012-05-30

申请号：GB201203971

申请日：2010-11-26

Applicant: IBM

Inventor： SANDERS DANIEL PAUL ,  CHENG JOY ,  HINSBERG WILLIAM ,  KIM HO-CHEOL ,  COLBURN MATTHEW ,  HARRER STEFAN ,  HOLMES STEVEN

IPC: G03F7/00

Abstract: A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material.

公开(公告)号：DE112010004884T5

公开(公告)日：2012-09-27

申请号：DE112010004884

申请日：2010-11-26

Applicant: IBM

Inventor： HOLMES STEVEN ,  COLBURN MATTHEW ,  SANDERS DANIEL PAUL ,  CHENG JOY ,  HINSBERG WILLIAM ,  KIM HO-CHEOL ,  HARRER STEFAN

IPC: G03F7/00

Abstract: Ein Verfahren zum Herstellen einer Schichtstruktur, die ein selbstorganisiertes Material umfasst, umfasst: Aufbringen einer nichtvernetzenden Fotolackschicht auf ein Substrat; strukturierendes Exponieren der Fotolackschicht gegenüber einer ersten Strahlung; gegebenenfalls Aufheizen der exponierten Fotolackschicht; Entwickeln der exponierten Fotolackschicht durch ein erstes Entwicklungsverfahren mit einem wässrigen alkalischen Entwickler, um eine strukturierte Ausgangs-Fotolackschicht zu bilden; fotochemisches, thermisches und/oder chemisches Behandeln der strukturierten Ausgangs-Fotolackschicht, um so eine behandelte strukturierte Fotolackschicht zu bilden, die nichtvernetzten behandelten Fotolack, der auf einer ersten Substratoberfläche aufgebracht ist, umfasst; Gießen einer Lösung eines orientierungslenkenden Materials in einem ersten Lösungsmittel auf die behandelte strukturierte Fotolackschicht und Entfernen des ersten Lösungsmittels, um eine orientierungslenkende Schicht zu bilden; Aufheizen der orientierungslenkenden Schicht, um einen Teil des orientierungslenkenden Materials wirkungsvoll an eine zweite Substratoberfläche zu binden; Entfernen von wenigstens einem Teil des behandelten Fotolacks und gegebenenfalls von nichtgebundenem orientierungslenkenden Material durch ein zweites Entwicklungsverfahren, um so eine Vorstruktur für die Selbstorganisation zu bilden; gegebenenfalls Aufheizen der Vorstruktur; Gießen einer Lösung eines selbstorganisationsfähigen Materials, das in einem zweiten Lösungsmittel gelöst ist, auf die Vorstruktur und Entfernen des zweiten Lösungsmittels; und Selbstorganisierenlassen des gegossenen Materials mit optionalem Aufheizen und/oder Tempern, um so die Schichtstruktur zu bilden, die das selbstorganisierte Material umfasst.

公开(公告)号：DE112010004848T5

公开(公告)日：2012-09-27

申请号：DE112010004848

申请日：2010-11-26

Applicant: IBM

Inventor： CHENG JOY ,  HINSBERG WILLIAM ,  WALLRAFF GREGORY MICHAEL ,  SUNDBERG LINDA KARIN ,  SANDERS DANIEL PAUL ,  KIM HO-CHEOL ,  NA YOUNG-HYE ,  TRUONG HOA ,  ITO HIROSHI

IPC: B81C1/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: Ein Verfahren zum Bilden einer Schichtstruktur, die eine Struktur von Bereichen eines selbstorganisierten Materials umfasst, umfasst folgende Schritte: Aufbringen einer Fotolackschicht, die einen nicht vernetzenden Fotolack umfasst, auf ein Substrat; wahlweise Aushärten der Fotolackschicht; Belichten einzelner Strukturbereiche der Fotolackschicht mit einer ersten Strahlung; wahlweise Aushärten der belichteten Fotolackschicht; und Entwickeln der belichteten Fotolackschicht mit einem nicht alkalischen Entwickler, um eine strukturierte Negativ-Fotolackschicht zu bilden, die unvernetzten entwickelten Fotolack umfasst; wobei der entwickelte Fotolack in einem bestimmten organischen Lösemittel unlöslich ist, das zum Gießen eines bestimmten Materials geeignet ist, welches zur Selbstorganisation in der Lage ist, und wobei der entwickelte Fotolack in einem wässrigen alkalischen Entwickler und/oder in einem zweiten organischen Lösemittel löslich ist. Eine Lösung, die das bestimmte Material umfasst, welches zur Selbstorganisation in der Lage und in dem bestimmten organischen Lösemittel gelöst ist, wird auf die strukturierte Fotolackschicht gegossen und das bestimmte organische Lösemittel wird entfernt. Dem gegossenen bestimmten Material wird die Möglichkeit zur Selbstorganisation gegeben, während das gegossene bestimmte Material wahlweise erwärmt und/oder getempert wird, wodurch die Schichereichen des selbstorganisierten bestimmten Materials umfasst.

公开(公告)号：GB2485941B

公开(公告)日：2014-05-21

申请号：GB201203971

申请日：2010-11-26

Applicant: IBM

Inventor： SANDERS DANIEL PAUL ,  CHENG JOY ,  HINSBERG WILLIAM ,  KIM HO-CHEOL ,  COLBURN MATTHEW ,  HARRER STEFAN ,  HOLMES STEVEN

IPC: G03F7/00

Abstract: A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.

公开(公告)号：GB2488250A

公开(公告)日：2012-08-22

申请号：GB201203583

申请日：2010-11-26

Applicant: IBM

Inventor： CHENG JOY ,  HINSBERG WILLIAM ,  WALLRAFF GREGORY MICHAEL ,  TRUONG HOA ,  SUNDBERG LINDA KARIN ,  ITO HIROSHI ,  SANDERS DANIEL PAUL ,  KIM HO-CHEOL ,  NA YOUNG-HYE

IPC: G03F7/16 ,  B81C1/00 ,  G03F7/20 ,  G03F7/32

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material comprises: disposing on a substrate a photoresist layer comprising a non-crosslinking photoresist; optionally baking the photoresist layer; pattern- wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; and developing the exposed photoresist layer with a non-alkaline developer to form a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist; wherein the developed photoresist is not soluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted given material, thereby forming the layered structure comprising the domain pattern of the self-assembled given material.

公开(公告)号：AT474249T

公开(公告)日：2010-07-15

申请号：AT06735757

申请日：2006-02-22

Applicant: IBM

Inventor： ALLEN ROBERT ,  BROCK PHILLIP ,  GIL DARIO ,  HINSBERG WILLIAM ,  LARSON CARL ,  SUNDBERG LINDA ,  WALLRAFF GREGORY

IPC: G03F7/11 ,  G03F7/20

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

公开(公告)号：GB2488250B

公开(公告)日：2014-02-26

申请号：GB201203583

申请日：2010-11-26

Applicant: IBM

Inventor： CHENG JOY ,  HINSBERG WILLIAM ,  WALLRAFF GREGORY MICHAEL ,  TRUONG HOA ,  SUNDBERG LINDA KARIN ,  ITO HIROSHI ,  SANDERS DANIEL PAUL ,  KIM HO-CHEOL ,  NA YOUNG-HYE

IPC: G03F7/16 ,  B81C1/00 ,  G03F7/20 ,  G03F7/32

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

公开(公告)号：GB2485493B

公开(公告)日：2014-01-15

申请号：GB201200163

申请日：2010-08-04

Applicant: IBM

Inventor： BANGSARUNTIP SARUNYA ,  EDELSTEIN DANIEL C ,  KIM HO-CHEOL ,  KOESTER STEVEN ,  SOLOMON PAUL M ,  HINSBERG WILLIAM

IPC: H01L21/44 ,  H01L21/311 ,  H01L21/768

Abstract: An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.