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公开(公告)号:AT451433T
公开(公告)日:2009-12-15
申请号:AT06794016
申请日:2006-10-13
Applicant: IBM
Inventor: BROCK PHILIP , CHA JENNIFER , GIL DARIO , LARSON CARL , SUNDBERG LINDA , WALLRAFF GREGORY
IPC: C09D129/00 , C09D131/04 , G03F7/00
Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.
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公开(公告)号:AT474249T
公开(公告)日:2010-07-15
申请号:AT06735757
申请日:2006-02-22
Applicant: IBM
Inventor: ALLEN ROBERT , BROCK PHILLIP , GIL DARIO , HINSBERG WILLIAM , LARSON CARL , SUNDBERG LINDA , WALLRAFF GREGORY
Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
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公开(公告)号:DE602006011049D1
公开(公告)日:2010-01-21
申请号:DE602006011049
申请日:2006-10-13
Applicant: IBM
Inventor: BROCK PHILIP JOE , CHA JENNIFER , GIL DARIO , LARSON CARL ERIC , SUNDBERG LINDA KARIN , WALLRAFF GREGORY
IPC: C09D129/00 , C09D131/04 , G03F7/00
Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.
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