公开(公告)号：JPH10189473A

公开(公告)日：1998-07-21

申请号：JP30678397

申请日：1997-11-10

Applicant: IBM

Inventor： KAM LOWIN LEE ,  LEWIS DAVID ANDREW ,  RAMAN GOBICHIECHITSUPUARAIYAMU

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide an electronic device having an extremely shallow and abrupt junction with high dopant surface concentration by a microwave annealing process. SOLUTION: This method utilizes microwave energy to anneal an ion implanted wafer. The wafer can be substantially completely annealed by controlling time, power density and temperature area while limiting (and substantially preventing) diffusion of dopant in silicon. Thus, the wafer can be substantially completely annealed. In this manner, a semiconductor element scaled by high performance is provided. And, conditions are altered to give dopant profile (diffusion) to the silicon and can be controlled. In another aspect, a profile depth of less than 50nm and net doping concentration of 6nm to several ten times or more is changed in the semiconductor wafer and surface concentration of the dopant exceeds about 1×10 /cm in the method for forming a PN junction.

公开(公告)号：DE69323270D1

公开(公告)日：1999-03-11

申请号：DE69323270

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：AT176333T

公开(公告)日：1999-02-15

申请号：AT93116795

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：DE69323270T2

公开(公告)日：1999-08-12

申请号：DE69323270

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE ,  REDMOND TIMOTHY ALVIDA ,  TSANG YUK LUN ,  VAN HORN JOSEPH JOHN ,  VIEHBECK ALFRED ,  WALKER GEORGE FREDERICK ,  YANG JER-MING ,  LONG CLARENCE SANFORD

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：ES2126621T3

公开(公告)日：1999-04-01

申请号：ES93116795

申请日：1993-10-18

Applicant: IBM

Inventor： FREIERMUTH PETER EDWARD ,  GINN KATHLEEN SCOTT ,  HALEY JEFFREY ALAN ,  LAMAIRE SUSAN JARVIS ,  LEWIS DAVID ANDREW ,  MILLS GAVIN TERENCE

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/00

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：MY117278A

公开(公告)日：2004-06-30

申请号：MYPI9403563

申请日：1994-12-29

Applicant: IBM

Inventor： HEDRICK JEFFREY CURTIS ,  LEWIS DAVID ANDREW ,  SHAW JANE MARGARET ,  VIEHBECK ALFRED ,  WHITEHAIR STANLEY JOSEPH

IPC: H05B6/80 ,  H05B6/62 ,  H05B6/78

Abstract: A MICROWAVE PROCESSING SYSTEM IS PROVIDED WHEREIN THE MATERIAL TO BE PROCESSED IS IN THE FORM OF WEB TYPE QUANTITY CONFIGURATION WITH A THICKNESS THAT IS SMALL IN RELATION TO THE WAVELENGTH OF A PARTICULAR MICROWAVE FREQUENCY. THE MATERIAL IS PASSED THROUGH THE FIELD ASSOCIATED WITH A PLURALITY OF MICROWAVE STANDING WAVES OF THE PARTICULAR FREQUENCY, EACH ADJACENT STANDING WAVE BEING OFFSET 1/4 WAVELENGTH ALONG THE DIRECTION OF MOVEMENT OF THE WEB. A CARRIER GAS REMOVES VOLATILE SOLVENTS FROM THE MATERIAL SURFACES.CONTROL IS PROVIDED FOR THE INTERRELATIONSHIP OF TEMPERATURE,RATE OF MOVEMENT, FLOW OF CARRIER GAS, AND MICROWAVE POWER.

公开(公告)号：DE69431394T2

公开(公告)日：2003-06-05

申请号：DE69431394

申请日：1994-12-21

Applicant: IBM

Inventor： HEDRICK JEFFREY CURTIS ,  LEWIS DAVID ANDREW ,  SHAW JANE MARGARET ,  VIEHBECK ALFRED ,  WHITEHAIR STANLEY JOSEPH

IPC: H05B6/80 ,  H05B6/62 ,  H05B6/78

Abstract: A microwave processing system is provided wherein the material to be processed is in the form of a web type quantity configuration with a thickness that is small in relation to the wavelength of a particular microwave frequency. The material is passed through the field associated with a plurality of microwave standing waves of the particular frequency, each adjacent standing wave being offset 1/4 wavelength along the direction of movement of the web. A carrier gas removes volatile solvents from the material surfaces. Control is provided for the interrelationship of temperature, rate of movement, flow of carrier gas, and microwave power.

公开(公告)号：DE69210750T2

公开(公告)日：1996-11-07

申请号：DE69210750

申请日：1992-10-02

Applicant: IBM

Inventor： LEWIS DAVID ANDREW ,  SHAW JANE MARGARET

IPC: H05K3/46 ,  C04B35/638 ,  C04B35/64 ,  B32B18/00 ,  C03C8/14 ,  C03C14/00 ,  H01L21/48

公开(公告)号：DE69210750D1

公开(公告)日：1996-06-20

申请号：DE69210750

申请日：1992-10-02

Applicant: IBM

Inventor： LEWIS DAVID ANDREW ,  SHAW JANE MARGARET

IPC: H05K3/46 ,  C04B35/638 ,  C04B35/64 ,  B32B18/00 ,  C03C8/14 ,  C03C14/00 ,  H01L21/48

公开(公告)号：DE69431394D1

公开(公告)日：2002-10-24

申请号：DE69431394

申请日：1994-12-21

Applicant: IBM

Inventor： HEDRICK JEFFREY CURTIS ,  LEWIS DAVID ANDREW ,  SHAW JANE MARGARET ,  VIEHBECK ALFRED ,  WHITEHAIR STANLEY JOSEPH

IPC: H05B6/80 ,  H05B6/62 ,  H05B6/78

Abstract: A microwave processing system is provided wherein the material to be processed is in the form of a web type quantity configuration with a thickness that is small in relation to the wavelength of a particular microwave frequency. The material is passed through the field associated with a plurality of microwave standing waves of the particular frequency, each adjacent standing wave being offset 1/4 wavelength along the direction of movement of the web. A carrier gas removes volatile solvents from the material surfaces. Control is provided for the interrelationship of temperature, rate of movement, flow of carrier gas, and microwave power.