公开(公告)号：SG118102A1

公开(公告)日：2006-01-27

申请号：SG200107602

申请日：2001-12-07

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  ROY ARTHUR CARRUTHERS ,  JAMES MCKELL EDWIN HARPER ,  CHAO-KUN HU ,  KIM YANG LEE ,  ISMAIL CEVDET NOYAN ,  ROBERT ROSENBERG ,  THOMAS MCCARROLL SHAW

IPC: H01L21/28 ,  B32B15/01 ,  C22C27/02 ,  H01L21/768 ,  H01L23/532 ,  H01L23/485

Abstract: An electrical conductor for use in an electronic structure is disclosed which includes a conductor body that is formed of an alloy including between about 0.001 atomic % and about 2 atomic % of an element selected from the group consisting of Ti, Zr, In, Sn and Hf; and a liner abutting the conductor body which is formed of an alloy that includes Ta, W, Ti, Nb and V. The invention further discloses a liner for use in a semiconductor interconnect that is formed of a material selected from the group consisting of Ti, Hf, In, Sn, Zr and alloys thereof, TiCu3, Ta1-XTix, Ta1-X, Hfx, Ta1-X, Inxy, Ta1-XSnx, Ta1-XZrx.

公开(公告)号：SG106653A1

公开(公告)日：2004-10-29

申请号：SG200107687

申请日：2001-12-11

Applicant: IBM

Inventor： TIMOTHY JOSEPH DALTON ,  STEPHEN EDWARD GRECO ,  JEFFREY CURTIS HEDRICK ,  SATYANARAYANA V NITTA ,  SAMPATH PURUSHOTHAMAN ,  KENNETH PARKER RODBELL ,  ROBERT ROSENBERG

IPC: H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L23/532

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

公开(公告)号：CH536557A

公开(公告)日：1973-04-30

申请号：CH804170

申请日：1970-05-29

Applicant: IBM

Inventor： ROBERT ROSENBERG

IPC: H01L21/768 ,  H01L21/00 ,  H01L21/28 ,  H01R3/00