公开(公告)号：EP0814544A2

公开(公告)日：1997-12-29

申请号：EP97109746

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/028 ,  H01S3/025

CPC classification number: H01S5/028

Abstract: A semiconductor laser diode (30), comprising a waveguide being terminated by a back facet (34) and a front facet (33). These facets (33, 34) comprise a front facet coating (31B) and a back facet coating (21A) having a reflectivity providing for controlled decoupling of light at said front facet (33) from the standing lightwave in said waveguide. The front facet coating (31B) comprises a stack of layers providing for a phase shift of the standing lightwave within said waveguide such that the intensity of the lightwave at said front facet (33), where light it is decoupled from said standing lightwave, has a relative minimum.

Abstract translation: 一种半导体激光二极管（30），包括由后面（34）和前刻面（33）端接的波导。 这些小平面（33,34）包括前小面涂层（31B）和后面涂层（21A），后面涂层（21A）具有反射率，提供所述前刻面（33）处的光与所述波导中的驻波光线的受控去耦。 前面小面涂层（31B）包括一叠层，用于使所述波导管内的立体光波相移，使得所述前刻面（33）处的光线与所述直立光波分离的光波强度具有 相对最小。

公开(公告)号：JPH1056234A

公开(公告)日：1998-02-24

申请号：JP16551997

申请日：1997-06-23

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  GASSER MARCEL ,  JAKUBOWICZ ABRAM ,  LATTA ERNST-EBERHARD ,  ROENTGEN PETER

IPC: H01S5/00 ,  H01S5/028 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a reliable semiconductor laser diode, in which a catastrophic optical mirror damage(COMD) is reduced and deterioration behavior is significantly improved, and its manufacturing method. SOLUTION: In a semiconductor laser diode 30 containing a waveguide which ends at a rear end surface 34 and a front end surface 33, these end surfaces contain a rear end surface coating 21A and a front end surface coating 31B having reflectance which causes controlled decoupling from the standing light wave of the light in the front end surface 33 in the waveguide. The front end surface coating 31B contains a stack of layers which causes phase shift of the standing light wave in the waveguide so that intensity of the light wave in the front end surface 33 where the light is decoupled from the standing light wave has a minimum value.

公开(公告)号：CA2006266C

公开(公告)日：1993-01-12

申请号：CA2006266

申请日：1989-12-20

Applicant: IBM

Inventor： GALEUCHET YVAN ,  GRAF VOLKER ,  HEUBERGER WILHELM ,  ROENTGEN PETER

IPC: H01L29/201 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L29/775 ,  H01L29/812 ,  H01S5/12 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/40 ,  H01L21/36

Abstract: A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber inbetween layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth- and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.

公开(公告)号：DE69714815D1

公开(公告)日：2002-09-26

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/02

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：CA2062153A1

公开(公告)日：1992-09-12

申请号：CA2062153

申请日：1992-03-02

Applicant: IBM

Inventor： BONA GIAN-LUCA ,  HEUBERGER WILHELM ,  ROENTGEN PETER ,  UNGER PETER

IPC: H01S5/00 ,  H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/025 ,  H01S3/08 ,  H01L21/203

Abstract: SZ 9-91-002 Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces: the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.

公开(公告)号：CA2076605A1

公开(公告)日：1993-05-05

申请号：CA2076605

申请日：1992-08-21

Applicant: IBM

Inventor： BONA GIAN-LUCA ,  BUCHAN NICHOLAS ,  HEUBERGER WILLI ,  ROENTGEN PETER

IPC: H01L33/06 ,  H01L33/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00

Abstract: The invention concerns AlGalnP/GalnP visible laser diodes and LEDs withimproved maximum output power. This is achieved by embedding the active region of the diode (30), e.g. a GalnP active layer (35), between very thin pand n-doped AlGalnP barrier layers (34.1, 34.2) and thick p- and n-doped AlGaAs cladding layers (33, 36). The inventive barrier layers (34.1, 34.2) are employedto avoid tunneling and spill over of carriers from the active region (35) into the cladding (33, 36). These barrier layers (34.1, 34.2) can be very thin thus allowing bandgap engineering and providing for barriers with low defect density. In addition the low resistance of the AlGaAs cladding reduces the thermal and electrical resistances of the device.

公开(公告)号：DE69714815T2

公开(公告)日：2003-04-30

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/02

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：DE69714815T8

公开(公告)日：2007-10-11

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：CA2006266A1

公开(公告)日：1990-09-10

申请号：CA2006266

申请日：1989-12-20

Applicant: IBM

Inventor： GALEUCHET YVAN ,  GRAF VOLKER ,  HEUBERGER WILHELM ,  ROENTGEN PETER

IPC: H01L29/201 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L29/775 ,  H01L29/812 ,  H01S5/12 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/40

Abstract: A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber inbetween layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth- and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.