公开(公告)号：DE69410772T2

公开(公告)日：1999-02-25

申请号：DE69410772

申请日：1994-11-24

Applicant: IBM

Inventor： LUSTIG NAFTALI ELIAHU ,  SAENGER KATHERINE LYNN ,  TONG HO-MING

IPC: G01N21/55 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  G01B11/06 ,  H01L21/304 ,  H01L21/66 ,  B24B37/04

公开(公告)号：DE69410772D1

公开(公告)日：1998-07-09

申请号：DE69410772

申请日：1994-11-24

Applicant: IBM

Inventor： LUSTIG NAFTALI ELIAHU ,  SAENGER KATHERINE LYNN ,  TONG HO-MING

IPC: G01N21/55 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  G01B11/06 ,  H01L21/304 ,  H01L21/66 ,  B24B37/04

公开(公告)号：SG70139A1

公开(公告)日：2000-01-25

申请号：SG1998005021

申请日：1998-11-27

Applicant: IBM

Inventor： RISHTON STEPHEN ANTHONY ,  SAENGER KATHERINE LYNN ,  ISMAIL KHALID EZZELDIN

IPC: H01L21/223 ,  H01L21/265 ,  H01L21/336 ,  H01L29/417 ,  H01L21/8249

Abstract: A field effect transistor and method for making the same is described wherein the field effect transistor incorporates a T-shaped gate and source and drain contacts self-aligned with preexisting shallow junction regions. The present invention provides a low resistance gate electrode and self-aligned low resistance source/drain contacts suitable for submicron FET devices, and scalable to smaller device dimensions.

公开(公告)号：SG72884A1

公开(公告)日：2000-05-23

申请号：SG1998004543

申请日：1998-11-05

Applicant: IBM

Inventor： DUNCOMBE PETER RICHARD ,  HUMMEL JOHN PATRICK ,  LAIBOWITZ ROBERT BENJAMIN ,  NEUMAYER DEBORAH ANN ,  SAENGER KATHERINE LYNN ,  SCHROTT ALEJANDRO GABRIEL

IPC: H01L21/8247 ,  C23C8/12 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792