公开(公告)号：WO2014077936A3

公开(公告)日：2014-07-24

申请号：PCT/US2013057962

申请日：2013-09-04

Applicant: IBM

Inventor： BOTULA ALAN B ,  JAFFE MARK D ,  JOSEPH ALVIN J ,  PHELPS RICHARD A ,  SLINKMAN JAMES ,  WOLF RANDY L

IPC: H01L27/12 ,  H01L21/762

CPC classification number: H01L29/0603 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/84 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1203 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon device 100 includes an active silicon layer 106, a buried oxide (BOX) layer 104 beneath the active silicon layer 106 and a high-resistivity silicon layer 102 beneath the BOX layer. The device also includes a harmonic suppression layer 110 at a boundary of the BOX layer 104 and the high-resistivity silicon layer 102.

Abstract translation: 硅器件100包括有源硅层106，有源硅层106下方的掩埋氧化物（BOX）层104和BOX层下面的高电阻率硅层102。 该装置还包括在BOX层104和高电阻率硅层102的边界处的谐波抑制层110。

公开(公告)号：AT398834T

公开(公告)日：2008-07-15

申请号：AT05717124

申请日：2005-03-22

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  KOBURGER III ,  SLINKMAN JAMES

IPC: H01L21/84 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786

Abstract: A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.