公开(公告)号：AT457081T

公开(公告)日：2010-02-15

申请号：AT01988335

申请日：2001-12-19

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： BOETTCHER STEVEN ,  HO HERBERT ,  HOINKIS MARK ,  LEE HYUN ,  WANG YUN-YU ,  WONG KWONG

IPC: C23C16/34 ,  H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532

Abstract: In integrated circuits having copper interconnect and low-k interlayer dielectrics, a problem of open circuits after heat treatment was discovered and solved by the use of a first liner layer of Ti, followed by a conformal liner layer of CVD TiN, followed in turn by a final liner layer of Ta or TaN, thus improving adhesion between the via and the underlying copper layer while reducing the increase in resistance caused by alloying between the Ti and the Copper to an acceptable amount.

公开(公告)号：AT438928T

公开(公告)日：2009-08-15

申请号：AT04786558

申请日：2004-08-20

Applicant: IBM

Inventor： STEEGEN AN ,  KU VICTOR ,  WONG KWONG ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL JR ,  JAMISON PAUL

IPC: H01L29/94 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/49

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.