公开(公告)号：EP1668706A4

公开(公告)日：2008-11-05

申请号：EP04786558

申请日：2004-08-20

Applicant: IBM

Inventor： STEEGEN AN L ,  KU VICTOR ,  WONG KWONG HON ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL JR ,  JAMISON PAUL

IPC: H01L29/94 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/49

CPC classification number: H01L29/66545 ,  H01L21/28079 ,  H01L29/4958

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure (260) is first formed on an etch stop layer (250) provided on a semiconductor substrate (240). A pair of spacers (400) is provided on sidewalls of the sacrificial gate structure (300). The sacrificial gate structure (300) is then removed, forming an opening (600). Subsequently, a metal gate (1000) including an first layer (700) of metal such as tungsten, a diffusion barrier (800) such as titanium nitride, and a second layer (900) of metal such as tungsten is formed in the opening (600) between the spacers (400).

公开(公告)号：WO2005024906A2

公开(公告)日：2005-03-17

申请号：PCT/US2004027327

申请日：2004-08-20

Applicant: IBM ,  WANG YUN YU ,  STEEGEN AN L ,  KU VICTOR ,  WONG KWONG HON ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL JR ,  JAMISON PAUL

Inventor： STEEGEN AN L ,  KU VICTOR ,  WONG KWONG HON ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL JR ,  JAMISON PAUL

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L

CPC classification number: H01L29/66545 ,  H01L21/28079 ,  H01L29/4958

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure (260) is first formed on an etch stop layer (250) provided on a semiconductor substrate (240). A pair of spacers (400) is provided on sidewalls of the sacrificial gate structure (300). The sacrificial gate structure (300) is then removed, forming an opening (600). Subsequently, a metal gate (1000) including an first layer (700) of metal such as tungsten, a diffusion barrier (800) such as titanium nitride, and a second layer (900) of metal such as tungsten is formed in the opening (600) between the spacers (400).

Abstract translation: 提供了一种用于高性能器件的金属替换栅极的结构和方法。 牺牲栅极结构（260）首先形成在设置在半导体衬底（240）上的蚀刻停止层（250）上。 在牺牲栅极结构（300）的侧壁上设置一对间隔物（400）。 然后去除牺牲栅极结构（300），形成开口（600）。 接着，在开口部形成有包括诸如钨的金属的第一层（700），诸如氮化钛的扩散阻挡层（800）和诸如钨的金属的第二层（900）的金属栅极（1000） 600）之间。

公开(公告)号：WO2005029568A2

公开(公告)日：2005-03-31

申请号：PCT/US2004026811

申请日：2004-08-19

Applicant: TOKYO ELECTRON LTD ,  IBM ,  O'MEARA DAVID L ,  WAJDA CORY ,  TAKAHASHI TSUYOSHI ,  CALLEGARI ALESSANDRO ,  SCHEER KRISTEN ,  ZAFAR SUFI ,  JAMISON PAUL

Inventor： O'MEARA DAVID L ,  WAJDA CORY ,  TAKAHASHI TSUYOSHI ,  CALLEGARI ALESSANDRO ,  SCHEER KRISTEN ,  ZAFAR SUFI ,  JAMISON PAUL

IPC: H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C23C16/34 ,  H01L21/00 ,  H01L21/66

CPC classification number: H01L21/28185 ,  H01L21/02181 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31658 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high­k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

Abstract translation: 提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。 扩散过滤层控制表面的氧化。 可以在氧化过程中形成界面氧化物层，该氧化工艺是在将highk层沉积到扩散过滤层上之后，或者在将高k层沉积到扩散过滤层上时进行的。

公开(公告)号：DE602004022435D1

公开(公告)日：2009-09-17

申请号：DE602004022435

申请日：2004-08-20

Applicant: IBM

Inventor： STEEGEN AN L ,  KU VICTOR ,  WONG KWONG HON ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL OSSINING ,  JAMISON PAUL

IPC: H01L29/94 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/49

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

公开(公告)号：AT438928T

公开(公告)日：2009-08-15

申请号：AT04786558

申请日：2004-08-20

Applicant: IBM

Inventor： STEEGEN AN ,  KU VICTOR ,  WONG KWONG ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL JR ,  JAMISON PAUL

IPC: H01L29/94 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/49

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

公开(公告)号：DE112020003567T5

公开(公告)日：2022-04-21

申请号：DE112020003567

申请日：2020-07-20

Applicant: IBM

Inventor： JAMISON PAUL ,  ANDO TAKASHI ,  MASSEY JOHN ,  CARTIER EDUARD

IPC: H01L27/08

Abstract: Ausführungsformen der vorliegenden Erfindung zielen auf einen BEOL-kompatiblen chipintegrierten Metall-Isolator-Metall-Entkopplungskondensator (MIMCAP) ab. Dieser BEOL-kompatible Prozess weist vor der Erzeugung der oberen Elektrode eine Wärmebehandlung zum Induzieren eines Amorph-Zu-Kubisch-Phasenüberganges in der Isolierschicht des MIM-Stapels auf. Bei einer nicht einschränkenden Ausführungsform der Erfindung wird eine untere Elektrodenschicht erzeugt, und eine Isolatorschicht wird auf einer Oberfläche der unteren Elektrodenschicht erzeugt. Die Isolatorschicht kann ein amorphes dielektrisches Material aufweisen. Die Isolatorschicht wird derart wärmebehandelt, dass das amorphe dielektrische Material einen Übergang in die kubische Phase durchläuft, wodurch ein dielektrisches Material in der kubischen Phase erzeugt wird. Eine obere Elektrodenschicht wird auf einer Oberfläche des dielektrischen Materials der Isolatorschicht in der kubischen Phase erzeugt.