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    Integrated circuit for spectral imaging system
    1.
    发明公开
    Integrated circuit for spectral imaging system 审中-公开
    用于光谱成像系统的集成电路

    公开(公告)号：EP2511681A3

    公开(公告)日：2012-10-31

    申请号：EP12175340.4

    申请日：2010-11-30

    Applicant: IMEC

    Inventor： Tack, Klaas ,  Lambrechts, Andy ,  Haspeslagh, Luc

    IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

    CPC classification number: G01J3/2823 ,  G01J3/12 ,  G01J3/26 ,  G01J3/2803 ,  G01J2003/1226 ,  G01J2003/265 ,  G01J2003/2806 ,  G01J2003/2826 ,  H04N5/332 ,  H04N5/378

    Abstract: An integrated circuit for an imaging system has an array of optical sensors (40), and an array of optical filters (10) each configured to pass a band of wavelengths onto one or more of the sensors, the array of optical filters being integrated with the array of sensors, and the integrated circuit also having read out circuitry (30) to read out pixel values from the array of sensors to represent an image, different ones of the optical filters being configured to have a different thickness, to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

    A METHOD FOR PRODUCING A HYBRID SEMICONDUCTOR WAFER
    2.
    发明公开
    A METHOD FOR PRODUCING A HYBRID SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：EP4181179A1

    公开(公告)日：2023-05-17

    申请号：EP21208577.3

    申请日：2021-11-16

    Applicant: Imec VZW

    Inventor： Karve, Gauri ,  Li, Yunlong ,  Haspeslagh, Luc ,  Soussan, Philippe ,  Sabuncuoglu Tezcan, Deniz

    IPC: H01L21/683 ,  H01L27/146

    Abstract: According to a preferred embodiment of the method of the invention, an assembly is produced comprising a temporary wafer (4) and one or more tiles (6) that are removably attached to said temporary wafer, preferably through a temporary adhesive layer (5). The tiles comprise a carrier portion (6a) and an active material portion (6b). The active material portion (6b) is attached to the temporary carrier (4). The assembly further comprises a single continuous layer of the first material surrounding each of the one or more tiles (6). Then the back side of the carrier portions (6a) of the tiles and of the continuous layer of the first material are simultaneously planarized, and the planarized back sides of the tiles and of the continuous layer of the first material are bonded to a permanent carrier wafer (17), after which the temporary carrier wafer (4) is removed. The method results in a hybrid wafer comprising a planar top layer formed of the material of the continuous layer (1,22) with one or more islands embedded therein, the top layer of said islands being formed by the top layer of the active material portion (6b) of the one or more tiles (6).

    Integrated circuit for spectral imaging system
    8.
    发明公开
    Integrated circuit for spectral imaging system 审中-公开
    光谱成像系统集成电路

    公开(公告)号：EP2511681A2

    公开(公告)日：2012-10-17

    申请号：EP12175340.4

    申请日：2010-11-30

    Applicant: IMEC

    Inventor： Tack, Klaas ,  Lambrechts, Andy ,  Haspeslagh, Luc

    IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

    CPC classification number: G01J3/2823 ,  G01J3/12 ,  G01J3/26 ,  G01J3/2803 ,  G01J2003/1226 ,  G01J2003/265 ,  G01J2003/2806 ,  G01J2003/2826 ,  H04N5/332 ,  H04N5/378

    Abstract: An integrated circuit for an imaging system has an array of optical sensors (40), and an array of optical filters (10) each configured to pass a band of wavelengths onto one or more of the sensors, the array of optical filters being integrated with the array of sensors, and the integrated circuit also having read out circuitry (30) to read out pixel values from the array of sensors to represent an image, different ones of the optical filters being configured to have a different thickness, to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

    Abstract translation: 用于成像系统的集成电路具有光学传感器阵列（40）和光学滤波器阵列（10），每个光学滤波器被配置为将波长带传递到一个或多个传感器上，光学滤波器阵列与 传感器阵列以及集成电路还具有读出电路（30）以读出来自传感器阵列的像素值以表示图像，不同的光学滤波器被配置为具有不同的厚度以通过不同的频带 通过干涉的波长，以允许检测波长的光谱。 读出电路可以使一个光学滤波器下的多个像素并行读出。 阵列的厚度可能非单调变化。 读出或稍后的图像处理可能涉及波长之间的选择或内插，以执行频谱采样或移位，以补偿厚度误差。

    Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom
    9.
    发明公开
    Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom 有权
    一种由此产生的生产半导体器件和半导体器件的过程

    公开(公告)号：EP2327659A1

    公开(公告)日：2011-06-01

    申请号：EP09177498.4

    申请日：2009-11-30

    Applicant: IMEC ,  Katholieke Universiteit Leuven, K.U.L. Leuven R&D

    Inventor： Witvrouw, Ann ,  Haspeslagh, Luc ,  Guo, Bin

    IPC: B81C1/00

    CPC classification number: B81C1/00333 ,  B81B2201/0257 ,  B81B2201/0264

    Abstract: A method is disclosed for manufacturing a semiconductor device, the method comprising
    - providing a substrate comprising a main surface with a non flat topography, the surface comprising substantial topography variations;
    - forming a first capping layer over the main surface;
    wherein, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluida to pass through. Associated membrane layers, capping layers and microelectronic devices have also been disclosed.

    Abstract translation: 一种方法是光盘为游离缺失制造半导体器件，所述方法包括： - 提供一基板，其包括具有非平坦地形的主表面，该表面包括大量形貌变化; - 形成在所述主表面上的第一覆盖层; worin，在形成第一覆盖层的过程中，在第一覆盖层的局部缺陷的引入，在对应于实质地形变化和局部缺陷适于允许预定fluida穿过的位置被定位在所述局部缺陷。 因此相关膜的层，覆盖层和微电子器件已经游离缺失盘。

    Method for manufacturing microelectronic devices and devices according to such method
    10.
    发明公开
    Method for manufacturing microelectronic devices and devices according to such method 有权
    按照这样的方法用于微电子器件的制造方法和设备

    公开(公告)号：EP2327658A1

    公开(公告)日：2011-06-01

    申请号：EP09177497.6

    申请日：2009-11-30

    Applicant: IMEC

    Inventor： Witvrouw, Ann ,  Haspeslagh, Luc ,  Claes, Gert

    IPC: B81C1/00

    CPC classification number: B81C1/00293 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0735 ,  B81C2203/0771

    Abstract: A method is disclosed for manufacturing a sealed cavity comprised in a microelectronic device, comprising forming a sacrificial layer at least at locations where the cavity is to be provided, depositing a membrane layer on top of the sacrificial layer, patterning the membrane layer in at least two separate membrane layer blocks, removing the sacrificial laye through the membrane layer, and sealing the cavity by sealing the membrane layer, wherein patterning the membrane layer is performed after removal of the sacrificial layer; and associated microelectronic devices.

    Abstract translation: 一种方法，光盘游离缺失了用于制造微电子器件包括一个密封的腔体，包括至少在所述空腔将被提供的位置形成牺牲层，在牺牲层的顶部上沉积一膜层，在图案化该薄膜层的至少 两个单独的薄膜层块，除去穿过膜层牺牲Laye的，并通过密封薄膜层，图案化worin薄膜层去除牺牲层之后，进行密封所述腔体; 和相关联的微电子器件。

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