SYSTEMS AND METHODS FOR MEASURING ONE OR MORE CHARACTERISTICS OF PATTERNED FEATURES ON A SPECIMEN
    1.
    发明申请
    SYSTEMS AND METHODS FOR MEASURING ONE OR MORE CHARACTERISTICS OF PATTERNED FEATURES ON A SPECIMEN 审中-公开
    用于测量样本中图案特征的一个或多个特征的系统和方法

    公开(公告)号:WO2007112300A3

    公开(公告)日:2008-12-04

    申请号:PCT/US2007064769

    申请日:2007-03-23

    Abstract: Systems and methods for measuring one or more characteristics of patterned features on a specimen are provided. One system includes an optical subsystem configured to acquire measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The system also includes a processor configured to determine the one or more characteristics of the patterned features from the measurements. One method includes acquiring measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The method also includes determining the one or more characteristics of the patterned features from the measurements.

    Abstract translation: 提供了用于测量样本上的图案特征的一个或多个特征的系统和方法。 一个系统包括光学子系统,被配置为从多个入射角,多个方位角和多个波长同时获取从样本上的图案化特征散射的光的测量。 该系统还包括配置成从测量中确定图案化特征的一个或多个特性的处理器。 一种方法包括以多个入射角,多个方位角和多个波长同时从样本上的图案化特征散射的光的测量。 该方法还包括从测量中确定图案化特征的一个或多个特性。

    4.
    发明专利
    未知

    公开(公告)号:AT504862T

    公开(公告)日:2011-04-15

    申请号:AT04713795

    申请日:2004-02-23

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

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