Abstract:
An inspection tool embodiment includes an illumination source for directing a light beam onto a workpiece to generate scattered light that includes the ordinary scattering pattern of the workpiece as well as light scattered from defects of the workpiece. The embodiment includes a programmable light selection array that receives light scattered from the workpiece and selectively directs the light scattered from defects onto a photosensor which detects the defect signal. Processing circuitry receives the defect signal and conducts surface analysis of the workpiece that can include the characterizing of defects of the workpiece. The programmable light selection arrays can include, but are not limited to, reflector arrays and filter arrays. The invention also includes associated surface inspection methods.
Abstract:
Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step.
Abstract:
Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.
Abstract:
A dark field surface inspection tool and system are disclosed herein. The tool includes an illumination source capable of scanning a light beam onto an inspection surface. Light scattered by each inspection point is captured as image data by a photo detector array arranged at a fourier plane. The images captured are adaptively filtered to remove a portion of the bright pixels from the images to generate filtered images. The filtered images are then analyzed to detect defects in the inspection surface. Methods of the invention include using die-to-die comparison to identify bright portions of scattering patterns and generate unique image filters associated with those patterns. The associated images are then filtered to generate filtered images which are then used to detect defects. Also, data models of light scattering behavior can be used to generate filters.
Abstract:
Systems for inspection of patterned and unpatterned wafers are provided. One system includes an illumination system configured to illuminate the specimen. The system also includes a collector configured to collect light scattered from the specimen. In addition, the system includes a segmented detector configured to separately detect different portions of the light such that azimuthal and polar angular information about the different portions of light is preserved. The detector may also be configured to produce signals representative of the different portions of the light. The system may also include a processor configured to detect defects on the specimen from the signals. In another embodiment, the system may include a stage that is configured to rotate and translate the specimen. In one such embodiment, the system may also include an illumination system configured to scan the specimen in a wide scan path during rotation and translation of the specimen.
Abstract:
An inspection tool embodiment includes an illumination source for directing a light beam onto a workpiece to generate scattered light that includes the ordinary scattering pattern of the workpiece as well as light scattered from defects of the workpiece. The embodiment includes a programmable light selection array that receives light scattered from the workpiece and selectively directs the light scattered from defects onto a photosensor which detects the defect signal. Processing circuitry receives the defect signal and conducts surface analysis of the workpiece that can include the characterizing of defects of the workpiece. The programmable light selection arrays can include, but are not limited to, reflector arrays and filter arrays. The invention also includes associated surface inspection methods.
Abstract:
Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system comprises any one or more of the following apparatuses: a reflectometric, a ellipsomertic, imaging, interferometric, and/ or scanning angle system.