中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.027 seconds)

    OVERLAY METROLOGY USING THE NEAR INFRA-RED SPECTRAL RANGE
    1.
    发明申请
    OVERLAY METROLOGY USING THE NEAR INFRA-RED SPECTRAL RANGE 审中-公开
    使用近红外光谱范围的覆盖度量

    公开(公告)号：WO2007061704A3

    公开(公告)日：2009-05-22

    申请号：PCT/US2006044259

    申请日：2006-11-13

    Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL ,  FROMMER AVIV

    Inventor： ADEL MICHAEL ,  FROMMER AVIV

    IPC: G01B11/00

    CPC classification number: G01N21/956 ,  G01N2021/213 ,  G03F7/70633

    Abstract: A method and tool for conducting NIR overlay metrology is disclosed. Such methods involve generating a filtered illumination beam including NIR radiation and directing that illumination beam onto an overlay target to produce an optical signal that is detected and used to generate overlay metrology measurements. The method is particularly suited to substrate applications having layers of opaque material that are transmissive in the NIR range (e.g., amorphous carbon) and where NTR imaging is used to obtain overlay measurements. A tool implementation includes a means for generating a filtered illumination beam extending into the NIR range and a detector for receiving NIR signal from an NIR illuminated target and a computer for processing the signal data to obtain overlay metrology measurements.

    Abstract translation: 公开了一种用于进行NIR重叠测量的方法和工具。 这种方法涉及产生包括NIR辐射的滤波照明光束并将该照明光束引导到覆盖目标上以产生被检测并用于产生覆盖度量测量的光信号。 该方法特别适用于具有在NIR范围（例如无定形碳）中透射的不透明材料层的衬底应用，并且其中使用NTR成像来获得覆盖测量。 工具实现包括用于产生延伸到NIR范围内的滤波照明光束的装置和用于从NIR照明目标接收NIR信号的检测器和用于处理信号数据以获得覆盖度量测量的计算机。

    METHOD FOR GENERATING A DESIGN RULE MAP HAVING SPATIALLY VARYING OVERLAY BUDGET
    3.
    发明申请
    METHOD FOR GENERATING A DESIGN RULE MAP HAVING SPATIALLY VARYING OVERLAY BUDGET 审中-公开
    用于生成具有空间变化的叠加预算的设计规则地图的方法

    公开(公告)号：WO2008036827A3

    公开(公告)日：2008-11-06

    申请号：PCT/US2007079053

    申请日：2007-09-20

    Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL ,  CHANG ELLIS

    Inventor： ADEL MICHAEL ,  CHANG ELLIS

    IPC: G06F17/50

    CPC classification number: G03F7/70633 ,  G03F7/70533

    Abstract: The invention is a method for generating a design rule map having a spatially varying overlay error budget. Additionally, the spatially varying overlay error budget can be employed to determine if wafers are fabricated in compliance with specifications. In one approach a design data file that contains fabrication process information and reticle information is processed using design rules to obtain a design map with a spatially varying overlay error budget that defines a localized tolerance to overlay errors for different spatial locations on the design map. This spatially varying overlay error budget can be used to disposition wafers. For example, overlay information obtained from measured metrology targets on a fabricated wafer are compared with the spatially varying overlay error budget to determine if the wafer overlay satisfies the required specification.

    Abstract translation: 本发明是一种用于生成具有空间变化的覆盖误差预算的设计规则图的方法。 此外，可以采用空间变化的重叠误差预算来确定晶圆是否按照规格制造。 在一种方法中，使用设计规则处理包含制造过程信息和标线片信息的设计数据文件，以获得具有空间变化的覆盖误差预算的设计图，该覆盖误差预算定义设计图上不同空间位置的覆盖误差的局部容差。 这种空间变化的覆盖误差预算可以用于处理晶圆。 例如，将从制造的晶片上的测量度量指标获得的叠加信息与空间变化的叠加误差预算进行比较，以确定晶片叠加是否满足所需规格。

    7.
    发明专利
    未知

    公开(公告)号：AT504862T

    公开(公告)日：2011-04-15

    申请号：AT04713795

    申请日：2004-02-23

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KENNETH P ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  GHINOVKER MARK ,  KNOLL NOAM ,  MOSHE BARUCH

    IPC: G03F7/20 ,  G01B11/00 ,  G03F9/00

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
    9.
    发明公开
    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
    装置和一种用于识别覆盖误差按用途杂散测量调查研究

    公开(公告)号：EP1570232A4

    公开(公告)日：2007-08-29

    申请号：EP03796723

    申请日：2003-12-05

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER D ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER F ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KEN ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  DZIURA THADDEUS G

    IPC: G03F7/20 ,  G03F9/00 ,  G01B11/00

    CPC classification number: G03F9/7088 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7084

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

Patent Agency Ranking