中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.027 seconds)

    MULTIPLE ANGLE OF INCIDENCE SPECTROSCOPIC SCATTEROMETER SYSTEM
    2.
    发明申请
    MULTIPLE ANGLE OF INCIDENCE SPECTROSCOPIC SCATTEROMETER SYSTEM 审中-公开
    多角度光谱光谱仪系统

    公开(公告)号：WO2006062952A2

    公开(公告)日：2006-06-15

    申请号：PCT/US2005044075

    申请日：2005-12-06

    Applicant: KLA TENCOR TECH CORP ,  BAREKET NOAH ,  WANG HAIMING

    Inventor： BAREKET NOAH ,  WANG HAIMING

    IPC: G01B11/14

    CPC classification number: G01B11/0641 ,  G01N21/211 ,  G01N21/956

    Abstract: Techniques for optimizing the sensitivity of spectroscopic measurement techniques with respect to certain profile variables by selecting desired measurement angles since the measurement sensitivity to each variable depends, at least in part, on the measurement angles of an incident beam. The selected desired set of measurement angles includes both an azimuth angle and a polar angle. Optimizing the sensitivity of spectroscopic measurement techniques can also reduce or eliminates measurement correlation among variable to be measured.

    Abstract translation: 由于对每个变量的测量灵敏度，因此通过选择所需的测量角度来优化光谱测量技术对某些分布变量的灵敏度的技术，至少部分地取决于入射光束的测量角度。 所选择的所需的测量角度集合包括方位角和极角。 优化光谱测量技术的灵敏度也可以减少或消除待测量的变量之间的测量相关性。

    SYSTEM FOR MEASURING A SAMPLE WITH A LAYER CONTAINING A PERIODIC DIFFRACTING STRUCTURE
    3.
    发明申请
    SYSTEM FOR MEASURING A SAMPLE WITH A LAYER CONTAINING A PERIODIC DIFFRACTING STRUCTURE 审中-公开
    用于测量具有周期性差分结构的层的样品的系统

    公开(公告)号：WO2006076484A2

    公开(公告)日：2006-07-20

    申请号：PCT/US2006001067

    申请日：2006-01-11

    Applicant: KLA TENCOR TECH CORP ,  BAREKET NOAH ,  WACK DANIEL C ,  ZHAO GUOHENG

    Inventor： BAREKET NOAH ,  WACK DANIEL C ,  ZHAO GUOHENG

    IPC: G01J4/00

    CPC classification number: G01N21/211 ,  G01N21/8422 ,  G01N2021/213

    Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

    Abstract translation: 为了测量膜的一维或二维衍射结构的临界尺寸和其它参数，可以通过首先进行薄膜厚度的测量来简化计算，使用不改变临界尺寸的膜模型 或与结构的其他特征相关的参数。 可以使用膜模型来充分准确地估计膜的厚度，使得可以采用这种估计来简化用于导出临界尺寸和与二维衍射结构相关的其它参数的结构模型。

    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
    6.
    发明公开
    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
    装置和一种用于识别覆盖误差按用途杂散测量调查研究

    公开(公告)号：EP1570232A4

    公开(公告)日：2007-08-29

    申请号：EP03796723

    申请日：2003-12-05

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER D ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER F ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KEN ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  DZIURA THADDEUS G

    IPC: G03F7/20 ,  G03F9/00 ,  G01B11/00

    CPC classification number: G03F9/7088 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7084

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

    7.
    发明专利
    未知

    公开(公告)号：AT504862T

    公开(公告)日：2011-04-15

    申请号：AT04713795

    申请日：2004-02-23

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KENNETH P ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  GHINOVKER MARK ,  KNOLL NOAM ,  MOSHE BARUCH

    IPC: G03F7/20 ,  G01B11/00 ,  G03F9/00

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

Patent Agency Ranking