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    SYSTEMS AND METHODS FOR MEASURING ONE OR MORE CHARACTERISTICS OF PATTERNED FEATURES ON A SPECIMEN
    1.
    发明申请
    SYSTEMS AND METHODS FOR MEASURING ONE OR MORE CHARACTERISTICS OF PATTERNED FEATURES ON A SPECIMEN 审中-公开
    用于测量样本中图案特征的一个或多个特征的系统和方法

    公开(公告)号：WO2007112300A3

    公开(公告)日：2008-12-04

    申请号：PCT/US2007064769

    申请日：2007-03-23

    Applicant: KLA TENCOR TECH CORP ,  WACK DAN ,  WANG HAIMING ,  GROSS KENNETH P

    Inventor： WACK DAN ,  WANG HAIMING ,  GROSS KENNETH P

    IPC: G01B11/14 ,  G01N21/55

    CPC classification number: G01B11/24 ,  G01N21/211 ,  G01N21/47 ,  G01N21/956 ,  G01N2021/213 ,  G01N2021/217 ,  G01N2021/4707 ,  G01N2021/4711 ,  G01N2021/4792

    Abstract: Systems and methods for measuring one or more characteristics of patterned features on a specimen are provided. One system includes an optical subsystem configured to acquire measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The system also includes a processor configured to determine the one or more characteristics of the patterned features from the measurements. One method includes acquiring measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The method also includes determining the one or more characteristics of the patterned features from the measurements.

    Abstract translation: 提供了用于测量样本上的图案特征的一个或多个特征的系统和方法。 一个系统包括光学子系统，被配置为从多个入射角，多个方位角和多个波长同时获取从样本上的图案化特征散射的光的测量。 该系统还包括配置成从测量中确定图案化特征的一个或多个特性的处理器。 一种方法包括以多个入射角，多个方位角和多个波长同时从样本上的图案化特征散射的光的测量。 该方法还包括从测量中确定图案化特征的一个或多个特性。

    METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER
    2.
    发明申请
    METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER 审中-公开
    用于控制WAFER中图案特征尺寸变化的方法和系统

    公开(公告)号：WO2006069255A2

    公开(公告)日：2006-06-29

    申请号：PCT/US2005046636

    申请日：2005-12-20

    Applicant: KLA TENCOR TECH CORP ,  LEVY ADY ,  HANNA MICHAEL ,  WACK DAN ,  FIELDEN JOHN ,  BEVIS CHRISTOPHER F ,  WAGNER LARRY

    Inventor： LEVY ADY ,  HANNA MICHAEL ,  WACK DAN ,  FIELDEN JOHN ,  BEVIS CHRISTOPHER F ,  WAGNER LARRY

    IPC: G06F17/50 ,  G01C25/00 ,  G03C5/00 ,  H01L21/66

    CPC classification number: G03F7/70675 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70425 ,  G03F7/70625

    Abstract: Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step.

    Abstract translation: 提供了用于控制跨晶片的图案化特征的尺寸变化的方法和系统。 一种方法包括在光刻过程期间测量跨越晶片的多于一个位置处的抗蚀剂中形成的潜像的特性。 该方法还包括响应于特性来改变光刻工艺的参数，以减小通过光刻工艺在晶片上形成的图案化特征的尺寸变化。 改变参数补偿在光刻工艺的后曝光烘烤步骤期间晶片曝光的温度中的非时间变化的空间变化和后曝光烘烤步骤的附加变化。

    5.
    发明专利
    未知

    公开(公告)号：AT504862T

    公开(公告)日：2011-04-15

    申请号：AT04713795

    申请日：2004-02-23

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KENNETH P ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  GHINOVKER MARK ,  KNOLL NOAM ,  MOSHE BARUCH

    IPC: G03F7/20 ,  G01B11/00 ,  G03F9/00

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
    8.
    发明公开
    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
    装置和一种用于识别覆盖误差按用途杂散测量调查研究

    公开(公告)号：EP1570232A4

    公开(公告)日：2007-08-29

    申请号：EP03796723

    申请日：2003-12-05

    Applicant: KLA TENCOR TECH CORP

    Inventor： MIEHER WALTER D ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER F ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KEN ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  DZIURA THADDEUS G

    IPC: G03F7/20 ,  G03F9/00 ,  G01B11/00

    CPC classification number: G03F9/7088 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7084

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

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