ELECTRONIC ODOR SENSOR AND METHOD FOR DETECTING ODOR

    公开(公告)号:JP2002310969A

    公开(公告)日:2002-10-23

    申请号:JP2002042898

    申请日:2002-02-20

    Abstract: PROBLEM TO BE SOLVED: To provide a modified electronic odor sensor. SOLUTION: The electronic odor sensor contains first and second amplifiers, a biasing network and a device so connected as to receive output signals from the first and second amplifiers. The device is so arranged as to correlate the output signals received to the presence or non-presence of the odor. The first and second amplifiers have first and second organic semiconductor layers respectively, and generate output signals responding to the electric conductivity of the respective organic semiconductor layers. The electric conductivity of the organic semiconductor layers corresponds to the existence of voltages or odors applied to those related among the amplifiers. The biasing network applies voltages to the amplifiers.

    ORGANIC LIGHT EMITTING DIODE AND MONOLITHICALLY INTEGRATED THIN-FILM TRANSISTORS

    公开(公告)号:JP2000029403A

    公开(公告)日:2000-01-28

    申请号:JP14899099

    申请日:1999-05-28

    Abstract: PROBLEM TO BE SOLVED: To obtain an economical and good efficient device by monolithically integrating thin-film transistors(TFTs) with light emitting diodes(LEDs) and forming active layers of the LEDs and the semiconductor layers of the TFTs of org. materials. SOLUTION: The monolithically integrated org. TFTs and org. LEDs 200 are formed by first depositing a conductive layer on transparent substrate 205. The layer acts both as the gate 215 of the electric field effect (TFT) (FET) 201 and the anode 216 of the LED 202. Next, a dielectric layer 220 of the FET 201 is formed. After the conductive layer and dielectric layer 220 are formed on the substrate 205, the source electrode 225 and drain electrode 226 of the FET 201 or the semiconductor material 230 of the FET is deposited. Since the semiconductor material 230 is not used as a hole transfer body, the layer of a hole transfer body 235 is formed in order to obtain necessary characteristics. An electron transfer body/emitter layer 240 is deposited on the hole transfer body 235 and in succession, a cathode 245 is deposited to complete the LED 202.

    RECORDING MEDIUM AND HOLOGRAPHIC RECORDING METHOD

    公开(公告)号:JPH10105030A

    公开(公告)日:1998-04-24

    申请号:JP21849997

    申请日:1997-08-13

    Abstract: PROBLEM TO BE SOLVED: To embody a photopolymer recording medium which is satisfactorily usable with a phase correlation multiplex holography, has usable high quality and is low in scattering. SOLUTION: A photopolymer recording medium 1 consists of an active layer 2 of the refractive index changing with radiation (for example, visible light). This active layer 2 includes a polymer matrix material acting as a host to a photochemical monomer material which responds with the radiation by photopolymn. This matrix material is formed by in-situ polymn. of a multifunctional oligomer having a mol.wt. of >=1000 during precuring. At least 70wt.% of the entire monomer material is monofunctional. The active layer 2 is held by two sheets of supporting plates 3 and 4 and at least one of these supporting plates is transmissive to the radiation. In this embodiment, the monofunctional monomer has an acrylate functional group and its mol.wt. is

    DEVICE CONTAINING N-CHANNEL SEMICONDUCTOR MATERIAL

    公开(公告)号:JP2000307173A

    公开(公告)日:2000-11-02

    申请号:JP2000090013

    申请日:2000-03-29

    Abstract: PROBLEM TO BE SOLVED: To realize a device which contains an N-channel semiconductor material that is stable in the air, transparent to visible rays, and indicates a specific field-effect electron mobility by adding condensed ring tetracarboxylic acid diamide compound to a thin film. SOLUTION: An N-channel semiconductor thin film contains a condensed ring tetracarboxylic acid diamide compound and indicates field effect electron mobility larger than 0.001 cm2/Vs. Naphathalene 1,4,5,8-tetracarboxylic acid diamide can be used as the above compound. This compound can be dissolved well into an ordinary organic solvent, and an active semiconductor thin film can be solution-deposited. The compound can be made very volatile so as to be easily vapor-deposited if necessary. Even if the compound is operated in the air, it indicates a desirably high mobility of an N-channel and a preferable ON/OFF ratio and is comparatively transparent to visible rays.

    MANUFACTURING PROCESS OF ORGANIC CIRCUIT

    公开(公告)号:JP2000307172A

    公开(公告)日:2000-11-02

    申请号:JP2000090010

    申请日:2000-03-29

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing process of an organic circuit. SOLUTION: An organic semiconductor thin film is formed, for instance, through a solution forming manner where a solution which contains an organic semiconductor material and solvent is fed on a board 18, and the solvent is evaporated for the formation of an organic semiconductor thin film. The surface characteristics of a board, organic semiconductor material, and process parameters are so selected as to form required nucleuses and to grow crystals. The obtained organic semiconductor thin film includes a continuous region whose area is larger than 1 cm2 and where carrier mobility is comparatively high or about 10-4 cm2V-1s-1 at a room temperature.

    METHOD FOR FORMATION OF SILICATE MATERIAL

    公开(公告)号:JP2001055508A

    公开(公告)日:2001-02-27

    申请号:JP2000214299

    申请日:2000-07-14

    Inventor: KATZ HOWARD EDAN

    Abstract: PROBLEM TO BE SOLVED: To provide a silicate material of a high silicon content and more stable in annealing, drying, and solvent exchange than the one formed purely from silicate monomer. SOLUTION: A silicate material contg. a silicate region and at least one substantially non-silicate region is prepared by mixing a preliminarily cured (precured) resin and pref. at least one resin precursor with a template mixture. The template mixture contains pref. at least one surfactant, at least one alcohol, and water. The precured resin is formed by reacting at least one silicate resin precursor with water pref. in the presence of a cosolvent and a catalyst. The precured resin is mixed with the template mixture and pref. with, in addition, at least one silicate precursor.

    PRODUCT COMPRISING TRANSISTORS
    10.
    发明专利

    公开(公告)号:JPH09199732A

    公开(公告)日:1997-07-31

    申请号:JP350597

    申请日:1997-01-13

    Abstract: PROBLEM TO BE SOLVED: To obtain excellent reliability in the air and appropriately high carrier mobility by using an inorganic thin film transistor as an n-channel transistor and an organic thin film transistor as a p-channel transistor. SOLUTION: The product consists of at least first and second transistors. The two transistors operate by being connected to each other. In a complementary inverter circuit 10, for example, the first transistor is an n-channel transistor 11 and the second transistor is a p-channel transistor 12. The n-channel transistor 11 is an inorganic thin film transistor and the p-channel transistor 12 is an organic thin film transistor. It is preferable that the active layer of the p-channel (organic) TFT is α-6T and that of the n-channel (inorganic) TFT is amorphous silicon (a-Si).

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