公开(公告)号：MY176767A

公开(公告)日：2020-08-21

申请号：MYPI2015702215

申请日：2015-07-07

Applicant: MIMOS BERHAD

Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  SURAYA BINTI SULAIMAN ,  KHAIRUL ANUAR BIN ABDUL WAHID ,  LEE HING WAH

Abstract: The present invention disclosed a thin-film resistance temperature detector (RTD) device with a single RTD structure, dual interconnecting RTD structures, and dual interconnecting RTD structures paired to a plurality of sensor electrodes (60). A method for fabricating the thin-film RTD device with the single RTD structure, dual interconnecting RTD structures, and dual interconnecting RTD structures paired to the plurality of sensor electrodes (60) are also disclosed herein. The RTD pattern (10) (20) is connected in series, while the dual RTD structures are connected via a concentric square pad (30) in a stacking and parallel manner. Further, the RTD pattern (10) (20) is arranged in a continuous array and provides a localised and user-selectable point resistance value via a plurality of contact pads (50A) (50B) and a secondary busbar connection line (40) which allows the RTD device to continue operating even when any of the RTD patterns or the RTD structures are broken.

公开(公告)号：MY184622A

公开(公告)日：2021-04-09

申请号：MYPI2013702271

申请日：2013-11-26

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SENG ,  MOHSEN NABIPOOR ,  TEH AUN SHIH ,  LEE WAI YEE ,  LEE HING WAH

Abstract: The present invention relates to a piezoresistive pressure sensor which detects applied pressure by measuring the change of electrical conductivity of the magnetic nanoparticles (3) in response to the application of mechanical stress onto the diaphragm (1). The pressure sensor comprises conductive electrodes (2) formed on the diaphragm (1) which is provided on a substrate (4). Magnetic nanoparticles (3) are deposited on the conductive electrodes (2) for electrically connecting the conductive electrodes (2) and changing electrical conductivity when stress is applied.

公开(公告)号：MY165721A

公开(公告)日：2018-04-20

申请号：MYPI2013702270

申请日：2013-11-26

Applicant: MIMOS BERHAD

Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  KHAIRUL ANUAR BIN ABD WAHID ,  AMIRUL BIN ABD RASHID

IPC: B81C1/00

Abstract: A method of forming nanomaterials (10) on packaged sensor device platform, the method comprising the steps of fabricating (11) a sensor device platform on full scale wafer to form a fully packaged sensor device platform for nanomaterials forming process (10) which comprises the steps of protecting the wire bond with epoxy while leaving the sensing area exposed for receiving coating of catalyst precursor for the nanomaterial growth, nucleating (16) the coated catalyst precursor at low temperature for forming an active nanoparticle, and providing the active nanoparticle nucleation with nutrient solution for turning them into solid and forming nanostructures for integration of readout circuit for sensing. Most illustrative diagram: Figure 3

公开(公告)号：MY164421A

公开(公告)日：2017-12-15

申请号：MYPI2012701094

申请日：2012-12-06

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  TEH AUN SHIH ,  LEE WAI YEE ,  KHAIRUL ANUAR ABD WAHID

IPC: H01L21/36 ,  H01L21/02 ,  H01L21/20

Abstract: A METHOD OF PRODUCING VERTICAL NANOWIRES USING SINGLE CATALYST MATERIAL IS PROVIDED, THE METHOD INCLUDES THE STEPS OF DEPOSITING AN INSULATING OXIDE OR NITRIDE LAYER (101) ON A SUBSTRATE (105) SURFACE, DEPOSITING A GOLD CATALYST LAYER (103) ON TOP OF THE INSULATING OXIDE OR NITRIDE LAYER (101), ANNEALING THE SUBSTRATE (105) WITH GOLD CATALYST AT TEMPERATURE ABOVE 350°C, SUCH THAT NANOPARTICLES ARE OF DIAMETER IN RANGE OF 1 TO 100 NM, GROWING ZINC OXIDE NANOWIRES FROM EXPOSED GOLD CATALYST BY CHEMICAL VAPOUR DEPOSITION (CVD) WITH DIETHYLZINC AS A PRECURSOR, AND GROWING SILICON NANOWIRES (107) FROM REMAINING GOLD CATALYST NANOPARTICLES WITH SILICON AS PRECURSOR, SUCH THAT VERTICAL TYPE ZINC OXIDE NANOWIRES ARE PRODUCED AND LATERALLY CONNECTED BY SILICON NANOWIRES (107) WHEREIN THE INSULATING OXIDE OR NITRIDE LAYER (101) IS NOT REQUIRED WHEN THE SUBSTRATE (105) IS INSULATIVE MATERIAL. THE MOST ILLUSTRATIVE DRAWING:

公开(公告)号：MY177552A

公开(公告)日：2020-09-18

申请号：MYPI2012701100

申请日：2012-12-07

Applicant: MIMOS BERHAD

Inventor： LEE HING WAH ,  DANIEL BIEN CHIA SHENG ,  TEH AUN SHIH ,  LEE WAI YEE ,  KHAIRUL ANUAR ABD WAHID

Abstract: A method of fabricating a resistive gas sensor device is provided, the method includes the steps of, depositing an insulating layer (105) on a silicon substrate layer (101) and depositing a conductive metal layer (103) onto the insulating layer (105), characterized in that, the method further includes the steps of depositing a thin metallic catalyst layer (107) covering a surface of the conductive metal layer (103) and etching the metal catalyst layer (107) and growing nanostructures (109) from the metal catalyst layer (107) that is exposed, such that the nanostructures (109) are interconnected with each other and the conductive metal layer (103).

公开(公告)号：MY172121A

公开(公告)日：2019-11-14

申请号：MYUI2013001818

申请日：2013-05-17

Applicant: MIMOS BERHAD

Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  MOHSEN NABIPOOR ,  SURAYA BINTI SULAIMAN

IPC: G01N27/22

Abstract: The present invention relates to a capacitive humidity sensor (100) comprising: a semiconductor substrate (101); an insulating layer (103) rests on the semiconductor substrate (101); a sensing membrane (105); a plurality of interdigitated electrodes (107); and a plurality of electrode contacts (109); characterised in that the present invention having ground plane connections (111) and the interdigitated electrodes (107) are sandwiched by the sensing membrane (105). The ground plane connections (111) and the sandwiching sensing membrane (105) are configured to eliminate stray capacitance and to provide optimal utilisation of fringing field effect respectively.

公开(公告)号：MY167491A

公开(公告)日：2018-08-30

申请号：MYPI2013702254

申请日：2013-11-25

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE WAI YEE ,  LEE HING WAH ,  KHAIRUL ANUAR BIN ABD WAHID

IPC: B82Y30/00 ,  B82Y40/00 ,  H01L51/10

Abstract: THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A DEVICE, MORE PARTICULARLY THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A GRAPHENE DEVICE BY EFFECTIVELY TRANSFERRING A GRAPHENE LAYER COMPRISING THE STEPS OF PROVIDING AT LEAST A FIRST MATERIAL (11) LAYER, DEPOSITING AT LEAST A SECOND MATERIAL (12) LAYER ON SAID AT LEAST A FIRST MATERIAL (11) LAYER, AND DEPOSITING AT LEAST A CATALYST LAYER (21) ON SAID AT LEAST A SECOND MATERIAL (12) LAYER FOR FORMING NANOSTRUCTURES (22), ETCHING SAID AT LEAST A FIRST MATERIAL (11) LAYER, AND TRANSFERRING REMAINING LAYERS OF SAID AT LEAST A SECOND MATERIAL (12) LAYER WITH NANOSTRUCTURES (22) ONTO AT LEAST A SUBSTRATE (13). MOST ILLUSTRATIVE DRAWING: