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公开(公告)号：MY174825A
公开(公告)日：2020-05-18
申请号：MYPI2011004789
申请日：2010-04-14
Applicant: SOLEXEL INC
Inventor： KAMIAN GEORGE
Abstract: The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.
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公开(公告)号：MY165969A
公开(公告)日：2018-05-18
申请号：MYPI2011005354
申请日：2010-05-05
Applicant: SOLEXEL INC
Inventor： KAMIAN GEORGE , NAG SOMNATH , TAMILMANI SUBBU , MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , YONEHARA TAKAO
Abstract: THIS DISCLOSURE ENABLES HIGH-PRODUCTIVITY FABRICATION OF SEMICONDUCTOR-BASED SEPARATION LAYERS (MADE OF SINGLE LAYER OR MULTI-LAYER POROUS SEMICONDUCTORS SUCH AS POROUS SILICON, COMPRISING SINGLE POROSITY OR MULTI-POROSITY LAYERS), OPTICAL REFLECTORS (MADE OF MULTI-LAYER/MULTI-POROSITY POROUS SEMICONDUCTORS SUCH AS POROUS SILICON), FORMATION OF POROUS SEMICONDUCTOR (SUCH AS POROUS SILICON) FOR ANTI-REFLECTION COATINGS, PASSIVATION LAYERS, AND MULTI-JUNCTION, MULTI-BAND-GAP SOLAR CELLS (FOR INSTANCE, BY FORMING A VARIABLE BAND GAP POROUS SILICON EMITTER ON A CRYSTALLINE SILICON THIN FILM OR WAFER-BASED SOLAR CELL). OTHER APPLICATIONS INCLUDE FABRICATION OF MEMS SEPARATION AND SACRIFICIAL LAYERS FOR DIE DETACHMENT AND MEMS DEVICE FABRICATION, MEMBRANE FORMATION AND SHALLOW TRENCH ISOLATION (STI) POROUS SILICON (USING POROUS SILICON FORMATION WITH AN OPTIMAL POROSITY AND ITS SUBSEQUENT OXIDATION). FURTHER THE DISCLOSURE IS APPLICABLE TO THE GENERAL FIELDS OF PHOTOVOLTAICS, MEMS, INCLUDING SENSORS AND ACTUATORS, STAND-ALONE, OR INTEGRATED WITH INTEGRATED SEMICONDUCTOR MICROELECTRONICS, SEMICONDUCTOR MICROELECTRONICS CHIPS AND OPTOELECTRONICS.
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3.发明申请DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 审中-公开用于制造用于光电晶体和微电子器件制造的半导体衬底的双面可重复模板
公开(公告)号：WO2011100647A2
公开(公告)日：2011-08-18
申请号：PCT/US2011024670
申请日：2011-02-12
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , KAPUR PAWAN , NAG SOMNATH , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
Inventor： MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , KAPUR PAWAN , NAG SOMNATH , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
IPC: H01L31/042 , H01L21/20 , H01L21/306 , H01L31/18
CPC classification number: H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.
Abstract translation: 本公开提供了从可再利用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。 对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。
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4.发明申请APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 审中-公开在基板上均匀形成多孔半导体的装置和方法
公开(公告)号：WO2013126033A3
公开(公告)日：2013-10-17
申请号：PCT/US2011059177
申请日：2011-11-03
Applicant: SOLEXEL INC , KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , TAMILMANI SUBRAMANIAN , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
Inventor： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , TAMILMANI SUBRAMANIAN , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
IPC: H01L21/3063 , H01L21/02 , H01L21/306
CPC classification number: B81C99/0025 , B81C2201/0115 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L21/306 , H01L31/0284 , H01L31/18
Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
Abstract translation: 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。
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5.发明申请APPARATUS AND METHOD FOR REPEATEDLY FABRICATING THIN FILM SEMICONDUCTOR SUBSTRATES USING A TEMPLATE 审中-公开使用模板重新制造薄膜半导体衬底的装置和方法
公开(公告)号：WO2012021880A3
公开(公告)日：2012-05-10
申请号：PCT/US2011047699
申请日：2011-08-13
Applicant: SOLEXEL INC , KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , WANG DAVID XUAN-QI , TAMILMANI SUBRAMANIAN , TOR SAM TONE , KAVARI RAHIM , RICOLCOL RAFAEL , KAMIAN GEORGE , LEIGH JOSEPH
Inventor： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , WANG DAVID XUAN-QI , TAMILMANI SUBRAMANIAN , TOR SAM TONE , KAVARI RAHIM , RICOLCOL RAFAEL , KAMIAN GEORGE , LEIGH JOSEPH
IPC: H01L31/18 , H01L31/0216 , H01L31/042
CPC classification number: H01L31/1896 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed.
Abstract translation: 公开了一些机构，其中一些实施例中的半导体晶片，硅被重复地用作用于制造高效能的薄半导体太阳能电池基板的模板和载体。 公开了能够以一致的质量和高产率重复使用这些模板的机制。
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Patent Agency Ranking6.发明公开DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 审中-公开双面再次使用的模板用于半导体基板的光伏电池和微电子的生产
公开(公告)号：EP2534700A4
公开(公告)日：2015-04-29
申请号：EP11742933
申请日：2011-02-12
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , KAPUR PAWAN , NAG SOMNATH , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
IPC: H01L31/042 , H01L21/20 , H01L21/306 , H01L31/18
CPC classification number: H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
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7.发明公开APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 有权装置及其制造方法均匀的多孔SEMICONDUCTORS在基底上
公开(公告)号：EP2652774A4
公开(公告)日：2016-04-27
申请号：EP11876396
申请日：2011-11-03
Applicant: SOLEXEL INC
Inventor： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , TAMILMANI SUBRAMANIAN , KAMIAN GEORGE , ASH-JAEE JAY , YONEHARA TAKAO
IPC: H01L21/306 , C25F3/12 , C25F7/00 , H01L21/02
CPC classification number: B81C99/0025 , B81C2201/0115 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L21/306 , H01L31/0284 , H01L31/18
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公开(公告)号：EP2387458A4
公开(公告)日：2012-04-11
申请号：EP10732153
申请日：2010-01-15
Applicant: SOLEXEL INC
Inventor： CRAFTS DOUG , MOSLEHI MEHRDAD , TAMILMANI SUBRAMANIAN , KRAMER JOE , KAMIAN GEORGE , NAG SOMNATH
CPC classification number: C25F3/12 , C25D11/32 , C25F7/00 , H01L21/67005 , H01L21/67075 , H01L21/67086 , H01L21/6776 , H01L31/1804 , Y02E10/547 , Y02P70/521
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公开(公告)号：EP2427914A4
公开(公告)日：2013-06-05
申请号：EP10772799
申请日：2010-05-05
Applicant: SOLEXEL INC
Inventor： KAMIAN GEORGE , NAG SOMNATH , TAMILMANI SUBBU , MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , YONEHARA TAKAO
CPC classification number: C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
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10.发明公开HIGH EFFICIENCY EPITAXIAL CHEMICAL VAPOR DEPOSITION (CVD) REACTOR 有权HIGH POWER REACTOR FOR外延化学气相沉积（CVD）
公开(公告)号：EP2419306A4
公开(公告)日：2013-01-02
申请号：EP10765064
申请日：2010-04-14
Applicant: SOLEXEL INC
Inventor： KAMIAN GEORGE
IPC: B60R25/02 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/12 , C30B25/14
CPC classification number: C23C16/45502 , C23C16/45517 , C23C16/45591 , C23C16/4583 , C23C16/481 , C30B25/12 , C30B25/14
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