公开(公告)号：WO2013064978A1

公开(公告)日：2013-05-10

申请号：PCT/IB2012/056021

申请日：2012-10-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： CAMPEDELLI, Roberto ,  PEZZUTO, Raffaella ,  LOSA, Stefano ,  MANTOVANI, Marco ,  AZPEITIA URQUIA, Mikel

IPC: B81B7/00 ,  B81B3/00

CPC classification number: B81B7/0006 ,  B81B3/0086 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/07 ,  B81B2207/097 ,  B81C1/00476 ,  H01L29/84

Abstract: A MEMS device (17) formed by a body (2); a cavity (25), extending above the body; mobile and fixed structures (18, 19) extending above the cavity and physically connected to the body via anchoring regions (16); and electrical-connection regions (10a, 10b, 10c), extending between the body (2) and the anchoring regions (16) and electrically connected to the mobile and fixed structures. The electrical-connection regions (10a, 10b, 10c) are formed by a conductive multilayer including a first semiconductor material layer (5), a composite layer (6) of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer (7).

Abstract translation: 由主体（2）形成的MEMS装置（17）; 在所述主体上方延伸的空腔（25）; 移动和固定结构（18,19），其延伸到空腔上方并经由锚定区域（16）物理连接到身体。 以及在主体（2）和锚固区域（16）之间延伸并且电连接到移动和固定结构的电连接区域（10a，10b，10c）。 电连接区域（10a，10b，10c）由包括第一半导体材料层（5），半导体材料的二元化合物和过渡金属的复合层（6）的导电性多层构成，以及 第二半导体材料层（7）。

公开(公告)号：WO2011015637A1

公开(公告)日：2011-02-10

申请号：PCT/EP2010/061441

申请日：2010-08-05

Applicant: STMICROELECTRONICS S.R.L. ,  CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

Inventor： CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region (4b) is formed on a substrate and on an insulating layer (3); a sacrificial region (5a) of dielectric is formed on the bottom region; a membrane region (21), of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug as far as the sacrificial region so as to form through trenches (15); the side wall and the bottom of the through trenches are completely coated in a conformal way with a porous material layer (16); at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity (18); and the through trenches are filled with filling material (20a) so as to form a monolithic membrane suspended above the cavity (18).

Abstract translation: 一种用于制造MEMS器件的方法，其中底部硅区域（4b）形成在衬底上和绝缘层（3）上; 电介质的牺牲区（5a）形成在底部区域上; 半导体材料的膜区域（21）在牺牲区域上外延生长; 将膜区域挖到远离牺牲区域以形成通过沟槽（15）; 通过沟槽的侧壁和底部以保形方式与多孔材料层（16）完全涂覆; 牺牲区域的至少一部分被选择性地通过多孔材料层去除并形成空腔（18）; 并且通孔填充有填充材料（20a），以便形成悬浮在空腔（18）上方的整体膜。

公开(公告)号：WO2013061313A1

公开(公告)日：2013-05-02

申请号：PCT/IB2012/055982

申请日：2012-10-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： LOSA, Stefano ,  PEZZUTO, Raffaella ,  CAMPEDELLI, Roberto ,  AZPEITIA URQUIA, Mikel ,  PERLETTI, Matteo ,  ESPOSITO, Luigi

IPC: B81C1/00

CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

Abstract: A method for manufacturing a protective layer (25) for protecting an intermediate structural layer (22) against etching with hydrofluoric acid (HP), the intermediate structural layer (22) being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer (22); performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer (25a),- forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallisation process on the second layer of aluminium oxide, forming a second intermediate protective layer (25b) and thereby completing the formation of the protective layer (25). The method for forming the protective layer (25) can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

Abstract translation: 一种用于制造用于保护中间结构层（22）以防止用氢氟酸（HP）蚀刻的保护层（25）的方法，所述中间结构层（22）由可被氢氟酸蚀刻或损坏的材料制成， 该方法包括以下步骤：通过原子层沉积在中间结构层（22）上形成第一氧化铝层; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层（25a）， - 通过原子层沉积形成第二层氧化铝，在第一中间保护层上方; 以及对所述第二氧化铝层进行热结晶处理，形成第二中间保护层（25b），从而完成所述保护层（25）的形成。 形成保护层（25）的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。