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    PROCESS FOR MANUFACTURING A COMBINED MICROELECTROMECHANICAL DEVICE AND CORRESPONDING COMBINED MICROELECTROMECHANICAL DEVICE
    2.
    发明公开
    PROCESS FOR MANUFACTURING A COMBINED MICROELECTROMECHANICAL DEVICE AND CORRESPONDING COMBINED MICROELECTROMECHANICAL DEVICE 审中-公开

    公开(公告)号：EP4098607A1

    公开(公告)日：2022-12-07

    申请号：EP22172711.8

    申请日：2022-05-11

    Applicant: STMicroelectronics S.r.l.

    Inventor： VERCESI, Federico ,  SEGHIZZI, Luca ,  OGGIONI, Laura ,  CORSO, Lorenzo

    IPC: B81B7/02 ,  B81C1/00

    Abstract: A process for manufacturing a combined microelectromechanical device (30) provides for: forming, in a die (1) of semiconductor material, at least a first (2a) and a second (2b) microelectromechanical structures; performing a first bonding phase to bond a cap (10) to the die (1) by means of a bonding region (14), to define at least a first (20a) and a second (20b) cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure having a first value; forming an access channel (22) through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity; performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

    PROCESS FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE, IN PARTICULAR A MOVEMENT SENSOR WITH CAPACITIVE CONTROL/DETECTION, AND MEMS DEVICE
    3.
    发明公开
    PROCESS FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE, IN PARTICULAR A MOVEMENT SENSOR WITH CAPACITIVE CONTROL/DETECTION, AND MEMS DEVICE 审中-公开

    公开(公告)号：EP3912953A1

    公开(公告)日：2021-11-24

    申请号：EP21174844.7

    申请日：2021-05-19

    Applicant: STMicroelectronics S.r.l.

    Inventor： ALLEGATO, Giorgio ,  CORSO, Lorenzo ,  GELMI, Ilaria ,  VALZASINA, Carlo

    IPC: B81B7/02

    Abstract: Process for manufacturing a MEMS device (30), wherein a first structural layer (41) of a first thickness is formed on a substrate (31); first trenches (58) are formed through the first structural layer (41); masking regions (60') separated by first openings (62) are formed on the first structural layer; a second structural layer (42) of a second thickness is formed on the first structural layer (41) in direct contact with the first structural layer (41) at the first openings (62) and forms here, together with the first structural layer, thick structural regions (64) having a third thickness equal to the sum of the first and the second thicknesses; a plurality of second trenches (67) are formed through the second structural layer (42), over the masking regions (60'); and third trenches (68) are formed through the first and the second structural layers (41, 42) by removing selective portions of the thick structural regions (64) .

    PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A MICROELECTROMECHANICAL STRUCTURE AND AN ASSOCIATED INTEGRATED ELECTRONIC CIRCUIT AND CORRESPONDING SEMICONDUCTOR DEVICE
    6.
    发明公开
    PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A MICROELECTROMECHANICAL STRUCTURE AND AN ASSOCIATED INTEGRATED ELECTRONIC CIRCUIT AND CORRESPONDING SEMICONDUCTOR DEVICE 审中-公开
    制造包括微电子机械结构和相关集成电子电路和相应半导体器件的半导体器件的工艺

    公开(公告)号：EP3281911A1

    公开(公告)日：2018-02-14

    申请号：EP17162605.4

    申请日：2017-03-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： TOCCHIO, Alessandro ,  CORSO, Lorenzo

    IPC: B81C1/00

    CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/092 ,  B81B2207/096 ,  B81C1/00246 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0771 ,  B81C2203/0792

    Abstract: A process for manufacturing an integrated semiconductor device (55), envisages: forming a MEMS structure (26); forming an ASIC electronic circuit (36); and electrically coupling the MEMS structure to the ASIC electronic circuit (36). The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate (20) including semiconductor material; wherein the MEMS structure (26) is formed at a first surface (20a) of the substrate, and the ASIC electronic circuit is formed at a second surface (20b') of the substrate (20), vertically opposite to the first surface (20a) in a direction transverse to a horizontal plane of extension of the first surface (20a) and of the second surface (20b').

    Abstract translation: 用于制造集成半导体器件（55）的工艺设想：形成MEMS结构（26）; 形成ASIC电子电路（36）; 以及将MEMS结构电耦合到ASIC电子电路（36）。 MEMS结构和ASIC电子电路从包括半导体材料的相同衬底（20）开始集成; 其中所述MEMS结构（26）形成在所述衬底的第一表面（20a）处，并且所述ASIC电子电路形成在所述衬底（20）的第二表面（20b'）处，与所述第一表面（20a） ）在横向于第一表面（20a）和第二表面（20b'）的延伸的水平面的方向上延伸。

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