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1.发明授权Mixed parallel-dichotomic serial sensing method for sensing multiple-levels non-volatile memory cells, and sensing circuit actuating such method 失效使用这样的方法并行非易失多电平存储器单元和感测电路的混合串行二分感测方法
公开(公告)号：EP0757355B1
公开(公告)日：2000-04-19
申请号：EP95830347.1
申请日：1995-07-31
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Daniele, Vincenzo , Gastaldi, Roberto , Manstretta, Alessandro , Telecco, Nicola , Torelli, Guido
IPC: G11C11/56
CPC classification number: G11C11/5642 , G11C11/5621 , G11C2211/5632 , G11C2211/5633
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2.发明授权Voltage booster circuit for generating both positive and negative boosted voltages 失效升压电路，用于产生正的和负的电压增加
公开(公告)号：EP0646924B1
公开(公告)日：1999-12-01
申请号：EP93830403.7
申请日：1993-09-30
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Gastaldi, Roberto , Malcovati, Piero , Torelli, Guido
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3.发明授权Method and circuit for generating a gate voltage in non-volatile memory devices 失效方法和电路，用于产生用于非易失性存储器阵列的栅极电压
公开(公告)号：EP0899742B1
公开(公告)日：2003-11-12
申请号：EP97830435.0
申请日：1997-08-29
Applicant: STMicroelectronics S.r.l.
Inventor： Rolandi, Paolo , Gastaldi, Roberto , Calligaro, Cristiano
CPC classification number: G11C11/5642 , G11C8/14 , G11C11/5621 , G11C11/5628 , G11C16/08 , G11C16/30 , G11C29/00 , G11C2211/5634
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4.发明授权
公开(公告)号：EP0817200B1
公开(公告)日：2003-03-19
申请号：EP96830371.9
申请日：1996-06-28
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Telecco, Nicola , Torelli, Guido
CPC classification number: H03K5/13 , G11C11/5621 , G11C11/5642 , G11C16/32 , G11C2211/5644
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公开(公告)号：EP0747903B1
公开(公告)日：2002-04-10
申请号：EP95830172.3
申请日：1995-04-28
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Gastaldi, Roberto , Telecco, Nicola , Torelli, Guido
CPC classification number: G11C7/065
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Patent Agency Ranking6.发明公开Method and circuit for generating a gate voltage in non-volatile memory devices 失效方法和电路，用于产生用于非易失性存储器阵列的栅极电压
公开(公告)号：EP0899742A1
公开(公告)日：1999-03-03
申请号：EP97830435.0
申请日：1997-08-29
Applicant: STMicroelectronics S.r.l.
Inventor： Rolandi, Paolo , Gastaldi, Roberto , Calligaro, Cristiano
CPC classification number: G11C11/5642 , G11C8/14 , G11C11/5621 , G11C11/5628 , G11C16/08 , G11C16/30 , G11C29/00 , G11C2211/5634
Abstract: The present invention relates to a circuit for generating a regulated voltage (RV), in particular for gate terminals of non-volatile memory cells of the floating gate type, which comprises a generator circuit (OSC,CHP) adapted to generate an unregulated voltage (VCHP) on its output, a comparator circuit coupled to the output of the generator circuit (OSC,CHP), including a reference element consisting of a non-volatile memory cell (REFC) of the floating gate type and adapted to output an electric error signal (ID) tied to the difference between the unregulated voltage (VCHP) and the threshold voltage of the cell (REFC), and a regulator circuit (CSEL,CBIAS,IVC,DRV,TR) coupled to the output of the comparator circuit and operative to regulate the unregulated voltage (VCHP) based on the value of the electric error signal (ID). Through the present circuit, the regulated voltage (RV) is made programmable and tied to the parameters of the memory cell (REFC).
Abstract translation: 本发明涉及一种电路，用于产生调节电压（RV），特别是用于浮置栅极型，其包括生成器电路（OSC，CHP）angepasst产生的非易失性存储单元的栅极端子（在未调节的电压 VCHP）在其输出端，耦合到所述发生器电路（OSC，CHP）包括参考元件由...组成的浮栅型的非易失性存储单元（REFC）的和angepasst电动错误的输出的输出端的比较器电路 绑在未调节的电压（VCHP）和细胞（REFC）的阈值电压，和调节器电路之间的差信号（ID）（CSEL，CBIAS，IVC，DRV，TR）耦合到所述比较器电路的输出端和 可操作以调节基于电动误差信号（ID）的值的未稳压电压（VCHP）。 通过本电路中，经调节的电压（RV）是由可编程的，并且依赖于存储单元（REFC）的参数。
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公开(公告)号：EP0978844B1
公开(公告)日：2005-11-02
申请号：EP98830491.1
申请日：1998-08-07
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Rolandi, Paolo , Gastaldi, Roberto , Torelli, Guido
IPC: G11C11/56
CPC classification number: G11C11/5642 , G11C11/5621 , G11C2211/5634
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公开(公告)号：EP0833340B1
公开(公告)日：2003-04-02
申请号：EP96830494.9
申请日：1996-09-30
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Rolandi, Paolo , Gastaldi, Roberto , Torelli, Guido
CPC classification number: G11C7/062 , G11C7/06 , G11C7/065 , G11C11/5621 , G11C11/5642
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公开(公告)号：EP0811986B1
公开(公告)日：2003-03-12
申请号：EP96830318.0
申请日：1996-06-05
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Gastaldi, Roberto , Manstretta, Alessandro , Cappelletti, Paolo , Torelli, Guido
IPC: G11C11/56
CPC classification number: G11C11/5621 , G11C11/5642 , G11C2211/5632 , G11C2211/5634
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10.发明授权Successive approximation method for sensing multiple-level non-volatile memory cells and sensing circuit using such method 失效部一步方法方法用于非易失性多电平存储器单元和对应的采样的扫描
公开(公告)号：EP0724266B1
公开(公告)日：2001-12-12
申请号：EP95830023.8
申请日：1995-01-27
Applicant: STMicroelectronics S.r.l.
Inventor： Calligaro, Cristiano , Daniele, Vincenzo , Gastaldi, Roberto , Manstretta, Alessandro , Torelli, Guido
IPC: G11C11/56
CPC classification number: G11C11/5642 , G11C11/5621 , G11C2211/5632
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