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    INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXES MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXES MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 审中-公开
    集成磁传感器，特别是三轴磁阻传感器及其制造方法

    公开(公告)号：WO2012085296A1

    公开(公告)日：2012-06-28

    申请号：PCT/EP2011/074045

    申请日：2011-12-23

    Applicant: STMICROELECTRONICS S.R.L. ,  PACI, Dario ,  MORELLI, Marco ,  RIVA, Caterina

    Inventor： PACI, Dario ,  MORELLI, Marco ,  RIVA, Caterina

    IPC: G01R33/00 ,  G01R33/09

    CPC classification number: G01R33/0011 ,  B82Y25/00 ,  G01R33/093 ,  H01L43/12

    Abstract: An integrated magnetoresistive device, where a substrate (17) of semiconductor material is covered, on a first surface (19), by an insulating layer (18). A magnetoresistor (26) of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator (34) of ferromagnetic material including at least one arm (34a), extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor (26). In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

    Abstract translation: 通过绝缘层（18）在第一表面（19）上覆盖半导体材料的衬底（17）的集成磁阻器件。 铁磁材料的磁阻（26）在绝缘层中延伸并限定传感器的灵敏度平面。 铁磁材料的集中器（34）包括至少一个臂（34a），沿着横向方向延伸到灵敏度平面并垂直偏移到磁电阻（26）。 以这种方式，垂直于灵敏度平面指向的磁通线被集中和偏转，以便产生指向与灵敏平面平行的方向的磁场分量。

    PACKAGED ELECTRONIC SYSTEM FORMED BY ELECTRICALLY CONNECTED AND GALVANICALLY ISOLATED DICE
    3.
    发明公开
    PACKAGED ELECTRONIC SYSTEM FORMED BY ELECTRICALLY CONNECTED AND GALVANICALLY ISOLATED DICE 审中-公开

    公开(公告)号：EP4036968A1

    公开(公告)日：2022-08-03

    申请号：EP22153019.9

    申请日：2022-01-24

    Applicant: STMicroelectronics S.r.l.

    Inventor： PACI, Dario ,  ADORNO, Silvia ,  DEL SARTO, Marco ,  CERINI, Fabrizio ,  GRITTI, Alex

    IPC: H01L23/48 ,  H01L23/538

    Abstract: A packaged electronic system having a support (55) formed by an insulating organic substrate housing a buried conductive region (56) that is floating. A first die (51) is fixed to the support and carries, on a first main surface, a first die contact region (67) capacitively coupled to a first portion of the buried conductive region. A second die (52) is fixed to the support and carries, on a first main surface, a second die contact region (67) capacitively coupled to a second portion of the buried conductive region. A packaging mass (77) encloses the first die (51), the second die (52), the first die contact region, the second die contact region, and, at least partially, the support (55).

    MEMS TRIAXIAL MAGNETIC SENSOR WITH IMPROVED CONFIGURATION
    4.
    发明公开
    MEMS TRIAXIAL MAGNETIC SENSOR WITH IMPROVED CONFIGURATION 审中-公开

    公开(公告)号：EP3346281A1

    公开(公告)日：2018-07-11

    申请号：EP17172105.3

    申请日：2017-05-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： LAGHI, Giacomo ,  LANGFELDER, Giacomo ,  GATTERE, Gabriele ,  TOCCHIO, Alessandro ,  PACI, Dario

    IPC: G01R33/00

    CPC classification number: G01R33/0206 ,  G01R33/0023 ,  G01R33/0286 ,  G01R33/038

    Abstract: A MEMS triaxial magnetic sensor device (51) is provided with a sensing structure (2) having: a substrate (6); an outer frame (4), which internally defines a window (5) and is elastically coupled to first anchorages (7) fixed with respect to the substrate by means of first elastic elements (8); a mobile structure (10) arranged in the window, suspended above the substrate, which is elastically coupled to the outer frame by second elastic elements (12) and carries a conductive path (P) for flow of an electric current (I); and an elastic arrangement (22, 24) operatively coupled to the mobile structure. The mobile structure performs, due to the first and second elastic elements and of the arrangement of elastic elements, a first sensing movement in response to Lorentz forces originating from a first magnetic-field component (B x ), a second sensing movement in response to Lorentz forces originating from a second magnetic-field component (B y ), and a third sensing movement in response to Lorentz forces originating from a third magnetic-field component (B z ); the first, second, and third sensing movements are distinct and decoupled from one another.

    PIEZOELECTRIC MEMS ACTUATOR FOR COMPENSATING UNWANTED MOVEMENTS AND MANUFACTURING PROCESS THEREOF
    7.
    发明公开
    PIEZOELECTRIC MEMS ACTUATOR FOR COMPENSATING UNWANTED MOVEMENTS AND MANUFACTURING PROCESS THEREOF 审中-公开

    公开(公告)号：EP3745482A1

    公开(公告)日：2020-12-02

    申请号：EP20176144.2

    申请日：2020-05-22

    Applicant: STMicroelectronics S.r.l.

    Inventor： GIUSTI, Domenico ,  PACI, Dario

    IPC: H01L41/09 ,  H01L41/22 ,  G02B7/02 ,  B81B3/00

    Abstract: A MEMS actuator (100) including a monolithic body (101) of semiconductor material, including a supporting portion (102) of semiconductor material, orientable with respect to a first and to a second rotation axis (A, B), transverse to each other; a first frame (104) of semiconductor material with a hexagonal shape, coupled to the supporting portion through first deformable elements (115) configured to control a rotation of the supporting portion about the first rotation axis (A); and a second frame (108) of semiconductor material with a regular quadrangular shape, coupled to the first frame by second deformable elements (116), coupled between the first and the second frames and configured to control a rotation of the supporting portion about the second rotation axis (B). The first and the second deformable elements carry respective piezoelectric actuation elements (150).

    MEMS COMPRISING A MEMBRANE AND AN ACTUATOR FOR CONTROLLING THE CURVATURE OF THE MEMBRANE
    9.
    发明公开
    MEMS COMPRISING A MEMBRANE AND AN ACTUATOR FOR CONTROLLING THE CURVATURE OF THE MEMBRANE 审中-公开

    公开(公告)号：EP3441358A1

    公开(公告)日：2019-02-13

    申请号：EP18187742.4

    申请日：2018-08-07

    Applicant: STMicroelectronics S.r.l.

    Inventor： PACI, Dario ,  GIUSTI, Domenico

    IPC: B81B3/00

    Abstract: MEMS device (21; 61; 91; 101) including: a semiconductor support body (22) having a first cavity (24); a membrane (26; 56; 106) including a peripheral portion, fixed to the support body (22), and a suspended portion; a first deformable structure (45; 68; 98) at a distance from a central part of the suspended portion of the membrane (26; 56; 106); a second deformable structure (44; 66; 96) laterally offset relative to the first deformable structure (45; 68; 98) towards the peripheral portion of the membrane (26; 56; 106); and a projecting region (40) fixed under the membrane (26; 56; 106); and wherein the second deformable structure (44; 66; 96) is deformable so as to translate the central part of the suspended portion of the membrane (26; 56; 106) along a first direction; and wherein the first deformable structure (45; 68; 98) is deformable so as to translate the central part of the suspended portion of the membrane (26; 56; 106) along a second direction.

    INTEGRATED AMR MAGNETORESISTOR WITH LARGE SCALE
    10.
    发明公开
    INTEGRATED AMR MAGNETORESISTOR WITH LARGE SCALE 审中-公开
    INTEGRIERTER AMR-MAGNETORESISTOR MIT GROSSEM MASSSTAB

    公开(公告)号：EP3109657A1

    公开(公告)日：2016-12-28

    申请号：EP15200291.1

    申请日：2015-12-15

    Applicant: STMicroelectronics S.r.l.

    Inventor： PACI, Dario ,  MARCHESI, Marco ,  MORELLI, Marco

    IPC: G01R33/00 ,  G01R33/025 ,  G01R33/09

    CPC classification number: G01R33/096 ,  G01R33/0011 ,  G01R33/025 ,  G01R33/07 ,  G01R33/09

    Abstract: An integrated AMR magnetoresistive sensor (20) having a magnetoresistor (21), a set/reset coil (22), and a shielding region (23) arranged on top of each other, with the set/reset coil (22) arranged between the magnetoresistor and the shielding region. The magnetoresistor (21) is formed by a magnetoresistive strip (24) of an elongated shape having a length in a first direction (X) parallel to the preferential magnetization direction (EA) and a width in a second direction (Y) perpendicular to the first direction. The set/reset coil (22) has at least one stretch (34a, 34b) extending transversely to the magnetoresistive strip. The shielding region (23) is a ferromagnetic material and has a width in the second direction (Y) greater than the width of the magnetoresistive strip (24) so as to attenuate the external magnetic field (H) traversing the magnetoresistive strip (24) and increasing the sensitivity scale of the magnetoresistive sensor.

    Abstract translation: 一种集成的AMR磁阻传感器（20），其具有设置/复位线圈（22）设置在彼此顶部的磁阻（21），设定/复位线圈（22）和屏蔽区域（23） 磁敏电阻和屏蔽区域。 磁阻电阻器（21）由具有与优先磁化方向（EA）平行的第一方向（X）的长度的细长形状的磁阻条（24）形成，并且垂直于第二方向（Y）的宽度 第一个方向 设置/复位线圈（22）具有横向于磁阻带延伸的至少一个延伸部（34a，34b）。 屏蔽区域（23）是铁磁材料，并且具有大于磁阻条（24）的宽度的第二方向（Y）的宽度，以便衰减穿过磁阻条带（24）的外部磁场（H） 并增加磁阻传感器的灵敏度。

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