MICROELECTROMECHANICAL ELECTROACOUSTIC TRANSDUCER WITH PIEZOELECTRIC ACTUATION AND CORRESPONDING MANUFACTURING PROCESS

    公开(公告)号:EP3687192A1

    公开(公告)日:2020-07-29

    申请号:EP20153473.2

    申请日:2020-01-23

    Abstract: An actuation structure (10) of a MEMS electroacoustic transducer (11) is formed in a die (12) of semiconductor material having a monolithic body (13) with a front surface (13a) and a rear surface (13b) extending in a horizontal plane (xy) and defined in which are: a frame (14); an actuator element (15) arranged in a central opening (16) defined by the frame (14); cantilever elements (18), coupled at the front surface (13a) between the actuator element (15) and the frame (14); and piezoelectric regions (19) arranged on the cantilever elements (18) and configured to be biased to cause a deformation of the cantilever elements (18) by the piezoelectric effect. A first stopper arrangement (30) is integrated in the die (12) and configured to interact with the cantilever elements (18) to limit a movement thereof in a first direction of a vertical axis (z) orthogonal to the horizontal plane (xy), towards the underlying central opening (16).

    PACKAGED ELECTRONIC SYSTEM FORMED BY ELECTRICALLY CONNECTED AND GALVANICALLY ISOLATED DICE

    公开(公告)号:EP4036968A1

    公开(公告)日:2022-08-03

    申请号:EP22153019.9

    申请日:2022-01-24

    Abstract: A packaged electronic system having a support (55) formed by an insulating organic substrate housing a buried conductive region (56) that is floating. A first die (51) is fixed to the support and carries, on a first main surface, a first die contact region (67) capacitively coupled to a first portion of the buried conductive region. A second die (52) is fixed to the support and carries, on a first main surface, a second die contact region (67) capacitively coupled to a second portion of the buried conductive region. A packaging mass (77) encloses the first die (51), the second die (52), the first die contact region, the second die contact region, and, at least partially, the support (55).

    PIEZOELECTRIC MICROELECTROMECHANICAL ACOUSTIC TRANSDUCER HAVING IMPROVED CHARACTERISTICS AND CORRESPONDING MANUFACTURING PROCESS

    公开(公告)号:EP3745743A1

    公开(公告)日:2020-12-02

    申请号:EP20176922.1

    申请日:2020-05-27

    Abstract: A piezoelectric microelectromechanical acoustic transducer (10), having a substrate (12) of semiconductor material with a frame portion (14) and a through cavity (13) defined internally by the frame portion; an active membrane (15), suspended above the through cavity and anchored, at a peripheral portion thereof, to the frame portion of the substrate by an anchorage structure (16), a plurality of piezoelectric sensing elements (19) carried by a front surface (15a) of the active membrane so as to detect mechanical stresses of the active membrane; a passive membrane (25), suspended above the through cavity, underneath the active membrane, interposed between the through cavity and a rear surface (15b) of the active membrane; and a pillar element (26), which fixedly couples, and is centrally interposed between, the active membrane and the passive membrane. A ventilation hole (28) passes through the entire active membrane (15), the passive membrane (25) and the pillar element (26) so as to set the through cavity (13) in fluidic communication with the front surface (15a) of the active membrane (15).

    MEMS ACOUSTIC TRANSDUCER WITH COMBFINGERED ELECTRODES AND CORRESPONDING MANUFACTURING PROCESS
    7.
    发明公开
    MEMS ACOUSTIC TRANSDUCER WITH COMBFINGERED ELECTRODES AND CORRESPONDING MANUFACTURING PROCESS 审中-公开
    具有梳状电极的MEMS声学换能器及相应的制造工艺

    公开(公告)号:EP3247134A1

    公开(公告)日:2017-11-22

    申请号:EP16206878.7

    申请日:2016-12-23

    Abstract: A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

    Abstract translation: 一种MEMS声换能器(20),其设置有:半导体材料的衬底(21),其具有相对于竖直方向(z)相对的后表面(21b)和前表面(21a); 形成在所述基板(21)内的从所述背面(21b)延伸到所述前表面(21a)的第一空腔(22); 设置在所述上​​表面(21a)处并悬挂在所述第一腔体(22)上方并沿其周边锚定到所述基底(21)的膜(23); 以及包括耦合到所述膜(23)的多个可动电极(29)和耦合到所述衬底(21)并且面向相应的可动电极(29)以形成的多个固定电极(30)的梳状指状电极布置 感测电容器,其中由于入射声压波导致膜(23)的变形导致感测电容器的电容变化(ΔC)。 特别地,梳形电极装置相对于膜(23)垂直放置并且与其平行地延伸。

    CAPACITIVE, MEMS-TYPE ACOUSTIC TRANSDUCER HAVING SEPARATE SENSITIVE AND TRANSDUCTION AREAS AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:EP4408023A1

    公开(公告)日:2024-07-31

    申请号:EP24151115.3

    申请日:2024-01-10

    CPC classification number: H04R19/005 H04R19/04 H04R2201/00320130101

    Abstract: Capacitive, MEMS-type acoustic transducer, having a sound collection part (51) and a transduction part (52). A substrate region (63) surrounds a first chamber (59) arranged in the sound collection part (51) and open towards the outside; a fixed structure (62) is coupled to the substrate region (63); a cap region (56) is coupled to the fixed structure (62). A sensitive membrane (70) is arranged in the sound collection part (51), is coupled to the fixed structure (62) and faces the first chamber (59) . A transduction chamber (58) is arranged in the transduction part (52), hermetically closed with respect to the outside and accommodates a detection membrane (72). An articulated structure (67) extends between the sensitive membrane (70) and the detection membrane (72), through the walls of the transduction chamber (58). A fixed electrode (92; 69C) faces and is capacitively coupled to the detection membrane (72). Conducive electrical connection regions (69A, 69C, 69D) extend above the substrate region (63), into the transduction chamber (58).

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