Abstract:
An ejection device (1) for a fluid (6), comprising: a first semiconductor wafer (2), housing, on a first side thereof, a piezoelectric actuator (3) and an outlet channel (33) for the fluid (6) alongside the piezoelectric actuator (3); a second semiconductor wafer (4) having, on a first side thereof, a recess (10) and, on a second side thereof opposite to the first side, at least one inlet channel (9) for said fluid (6) fluidically coupled to the recess (10); and a dry-film (8) coupled to a second side, opposite to the first side, of the first wafer. The first and the second wafers are coupled together so that the piezoelectric actuator and the outlet channel are set directly facing, and completely contained in, the recess (10) that forms a reservoir for the fluid (6). The dry-film has an ejection nozzle (13).
Abstract:
MEMS device (1) comprising: a signal processing assembly (120); a transduction module (38; 40, 41, 56) comprising a plurality of transducer devices (56); a stiffening structure (113) at least partially surrounding each transducer device (56); one or more coupling pillars (36) for each transducer device (56), extending on the stiffening structure (113) and configured to physically and electrically couple the transduction module (38; 40, 41, 56) to the signal processing assembly (120), to carry control signals of the transducer devices (56). Each conductive coupling element (36) has a section having a shape such as to maximize the overlapping surface with the stiffening structure (113) around the respective transducer device (56). This shape includes hypocycloid with a number of cusps equal to or greater than three; triangular; quadrangular.
Abstract:
Micro-electro-mechanical mirror device (1) having a fixed structure (2) defining an external frame (2') which delimits a cavity (3); a tiltable structure (4) extending into the cavity; a reflecting surface (4') carried by the tiltable structure and having a main extension in a horizontal plane (XY); an actuation structure (10), coupled between the tiltable structure (4) and the fixed structure (2). The actuation structure (10) is formed by at least one first pair of actuation arms (12A, 12B) configured to cause the rotation of the tiltable structure (2) around a first rotation axis (SA) parallel to the horizontal plane (XY). The actuation arms of the first pair of actuation arms (12A, 12B) are elastically coupled to the tiltable structure (4) through respective coupling elastic elements (14A, 14B) and are each formed by a bearing structure (15) and by a piezoelectric structure (13). The bearing structure (15) of each actuation arm of the first pair of actuation arms (12A, 12B) is formed by a soft region (56) of a first material and the coupling elastic elements (14A, 14B) are formed by a bearing layer (103) of a second material, the second material having greater stiffness than the first material.
Abstract:
PMUT acoustic transducer (10) formed in a body (11) of semiconductor material having a face (11A) and accommodating a plurality of first buried cavities (12A-12H), having an annular shape, arranged concentrically with each other and extending at a distance from the face (11A) of the body (11). The first buried cavities (12A-12H) delimit from below a plurality of first membranes (13A-13H) formed by the body (11) so that each first membrane (13A-13H) extends between a respective first buried cavity (12A-12H) of the plurality of first buried cavities and the face (11A) of the body (11). The plurality of first membranes (13A-13H) include a central membrane (13A) and a plurality of peripheral membranes (13B-13H) surrounding the central membrane (13A) and spaced outward in the radial direction. A plurality of piezoelectric elements (15A-15H) extend on the face of the body, each piezoelectric element extending above a respective first membrane (13A-13H) of the plurality of first membranes. The first membranes (13A-13H) have different widths (w1-w8), variable between a minimum value and a maximum value and define respective different resonance frequencies.
Abstract:
A micro-electro-mechanic actuator device (1; 85; 95) comprising: a fixed structure (4); and a mobile structure (2), which includes a first deformable band (47c) and a further second deformable band (47a) and a further third deformable band (47b), which extend on opposite sides of the first deformable band, each carrying a piezoelectric actuator (50i-50j). In a working condition, in which the second and third piezoelectrics are biased by a working voltage, the second and third deformable bands (47a, 47b) are subjected to a negative bending, while the first deformable band (47c) is subjected to a positive bending. There are thus generated two translations that add together, causing a displacement of the first deformable band greater than the one that may be obtained by a single membrane of equal base area.
Abstract:
A fluid ejection device (1), comprising: a first semiconductor body (2) including an actuator (3), which is operatively coupled to a chamber (6) for containing the fluid and is configured to cause ejection of the fluid; and a channel (11a) for inlet of the fluid, which extends in a first direction (Z) and has a section having a first dimension (A 1 ); and a second semiconductor body (8), which is coupled to the first semiconductor body (2) and has an ejection nozzle (13) configured to expel the fluid. The second semiconductor body (8) further comprises a first restriction channel (16), which is fluidically coupled to the inlet channel (11a), extends in a second direction (X) orthogonal to the first direction (Z) and has a respective section with a second dimension (A 3 ) smaller than the first dimension (A 1 ) so as to form a restriction between the inlet channel (11a) and the chamber (6).
Abstract:
A microelectromechanical mirror device (20) has, in a die (1') of semiconductor material: a fixed structure (4) defining a cavity (3); a tiltable structure (2) carrying a reflecting region (2'), elastically suspended above the cavity (3) and having a main extension in a horizontal plane (xy); at least one first pair of driving arms (12a, 12b), carrying respective piezoelectric structures (13) which can be biased to generate a driving force such as to cause a rotation of the tiltable structure (2) about a rotation axis (X) parallel to a first horizontal axis (x) of the horizontal plane; elastic suspension elements (6a, 6b), which elastically couple the tiltable structure (2) to the fixed structure (4) at the rotation axis (X) and are rigid to movements out of the horizontal plane (xy) and compliant to torsion about the rotation axis (X). In particular, the driving arms (12a, 12b) of the first pair are magnetically coupled to the tiltable structure (2) so as to cause its rotation about the rotation axis (X) by magnetic interaction, following biasing of the respective piezoelectric structures (13) .
Abstract:
A microelectromechanical mirror device (20) has, in a die (1') of semiconductor material: a fixed structure (4) defining a cavity (3); a tiltable structure (2) carrying a reflecting region (2'), elastically suspended above the cavity (3) and having a main extension in a horizontal plane (xy); at least one first pair of driving arms (12a, 12b), carrying respective piezoelectric structures (13) which can be biased to generate a driving force such as to cause a rotation of the tiltable structure (2) about a rotation axis (X) parallel to a first horizontal axis (x) of the horizontal plane; elastic suspension elements (6a, 6b), which elastically couple the tiltable structure (2) to the fixed structure (4) at the rotation axis (X) and are rigid to movements out of the horizontal plane (xy) and compliant to torsion about the rotation axis (X). In particular, the driving arms (12a, 12b) of the first pair are magnetically coupled to the tiltable structure (2) so as to cause its rotation about the rotation axis (X) by magnetic interaction, following biasing of the respective piezoelectric structures (13) .
Abstract:
A piezoelectric microelectromechanical structure (10), provided with a piezoelectric layer structure (11) having a main extension in a horizontal plane (xy) and a variable cross-section in a plane (xz) transverse to the horizontal plane, comprises a bottom electrode (12), a piezoelectric material (14) constituted by a PZT film arranged on the bottom electrode, and a top electrode (16) arranged on the piezoelectric material, wherein the piezoelectric material has a first thickness (w1) along a vertical axis (z) at a first area (14') and a second thickness (w2) along the vertical axis (z) at a second area (14"), the second thickness being smaller than the first thickness. A corresponding manufacturing process is also disclosed.