公开(公告)号：EP3913681A3

公开(公告)日：2022-03-16

申请号：EP21174210.1

申请日：2021-05-17

Applicant: STMicroelectronics S.r.l.

Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：EP3913681A2

公开(公告)日：2021-11-24

申请号：EP21174210.1

申请日：2021-05-17

Applicant: STMicroelectronics S.r.l.

Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：EP4098607A1

公开(公告)日：2022-12-07

申请号：EP22172711.8

申请日：2022-05-11

Applicant: STMicroelectronics S.r.l.

Inventor： VERCESI, Federico ,  SEGHIZZI, Luca ,  OGGIONI, Laura ,  CORSO, Lorenzo

IPC: B81B7/02 ,  B81C1/00

Abstract: A process for manufacturing a combined microelectromechanical device (30) provides for: forming, in a die (1) of semiconductor material, at least a first (2a) and a second (2b) microelectromechanical structures; performing a first bonding phase to bond a cap (10) to the die (1) by means of a bonding region (14), to define at least a first (20a) and a second (20b) cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure having a first value; forming an access channel (22) through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity; performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

公开(公告)号：EP3907178A1

公开(公告)日：2021-11-10

申请号：EP21171642.8

申请日：2021-04-30

Applicant: STMicroelectronics S.r.l.

Inventor： GIUSTI, Domenico ,  PRELINI, Carlo Luigi ,  FERRERA, Marco ,  LAZZARI, Carla Maria ,  SEGHIZZI, Luca ,  BONI, Nicolò ,  CARMINATI, Roberto ,  QUAGLIA, Fabio

IPC: B81B7/00

Abstract: The MEMS actuator (150) is formed by a substrate (50'), which surrounds a cavity (100); by a deformable structure (105) suspended on the cavity; by an actuation structure (65) formed by a first piezoelectric region (61) of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure (90) formed by a second piezoelectric region (80) of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.

公开(公告)号：EP3839603A1

公开(公告)日：2021-06-23

申请号：EP20215784.8

申请日：2020-12-18

Applicant: STMicroelectronics S.r.l.

Inventor： SEGHIZZI, Luca ,  BONI, Nicolò ,  OGGIONI, Laura ,  CARMINATI, Roberto ,  CARMINATI, Marta

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00

Abstract: For manufacturing an optical microelectromechanical device (70), a first wafer (90) of semiconductor material having a first surface (100A) and a second surface (100B) is machined to form a suspended mirror structure (86), a fixed structure (74) surrounding the suspended mirror structure (86), elastic supporting elements (84A-84D) which extend between the fixed structure and the suspended mirror structure, and an actuation structure (83), coupled to the suspended mirror structure. A work wafer (10') is machined separately to form a second wafer (15) having a chamber (104) delimited by a bottom wall having a through opening (103). The second wafer is bonded to the first surface (100A) of the first wafer (90) in such a way that the chamber (104) overlies the actuation structure (83) and the through opening (103) is aligned to the suspended mirror structure (86). Furthermore, a third wafer (98) is bonded to the second surface (100B) of the first wafer to form a composite wafer device (112). The composite wafer device (112) is then diced to form an optical microelectromechanical device (70).

公开(公告)号：EP3809476A1

公开(公告)日：2021-04-21

申请号：EP20200134.3

申请日：2020-10-05

Applicant: STMicroelectronics S.r.l.

Inventor： SEGHIZZI, Luca ,  VERCESI, Federico ,  PEDRINI, Claudia

IPC: H01L41/08 ,  B06B1/06 ,  B41J2/14 ,  B81B3/00 ,  F04B43/04 ,  H01L41/09 ,  H01L41/113 ,  H01L41/31 ,  H04R17/00

Abstract: A transducer (1; 20'; 20") comprising: a supporting body (8); a suspended structure (2; 22), mechanically coupled to the supporting body (8), having a first and a second surface (2a, 2b; 22a, 22b) opposite to one another along an axis (Z), and configured to oscillate in an oscillation direction having at least one component parallel to said axis (Z); a first piezoelectric transducer (4), which extends over the first surface (2a; 22a) of the suspended structure (2; 22); and a second piezoelectric transducer (6), which extends over the second surface (2b; 22b) of the suspended structure (2; 22).

公开(公告)号：EP4159445A1

公开(公告)日：2023-04-05

申请号：EP22198098.0

申请日：2022-09-27

Applicant: STMicroelectronics S.r.l.

Inventor： NOMELLINI, Andrea ,  SEGHIZZI, Luca

IPC: B41J2/16 ,  B41J2/14

Abstract: Process for manufacturing a microfluidic device, wherein a sacrificial layer (32) is formed on a semiconductor substrate (31); a carrying layer (33) is formed on the sacrificial layer; the carrying layer is selectively removed to form at least one release opening (36) extending through the carrying layer; a permeable layer (37) of a permeable semiconductor material is formed in the at least one release opening; the sacrificial layer (32) is selectively removed through the permeable layer (37) to form a fluidic chamber (38; 138); the at least one release opening is filled with non-permeable semiconductor filling material, forming a monolithic body having a membrane region (42); an actuator element is formed on the membrane region and a cap element is attached to the monolithic body and surrounds the actuator element.

公开(公告)号：EP3689816A1

公开(公告)日：2020-08-05

申请号：EP20153241.3

申请日：2020-01-22

Applicant: STMicroelectronics S.r.l.

Inventor： SEGHIZZI, Luca ,  MONTAGNA, Linda ,  VISALLI, Giuseppe ,  AZPEITIA URQUIA, Mikel

IPC: B81C1/00 ,  G02B26/08

Abstract: A method of manufacturing an integrated component (1), comprising the steps of: arranging a first wafer (100) of semiconductor material, having a surface (2a); arranging a second wafer (200) of semiconductor material, including a substrate (28) and a structural layer (32) on the substrate (28), the structural layer (32) integrating a detector device (26) for detecting electromagnetic radiation (R3); coupling the structural layer (32) of the second wafer (200) to the surface (2a) of the first wafer (100); and processing the substrate (28) of the second wafer (200) to form a stator (95), a rotor (94), and a mobile mass (93) of a micromirror (104), the stator (95) and the rotor (94) forming an assembly for capacitively driving the mobile mass (93).

公开(公告)号：EP4304053A1

公开(公告)日：2024-01-10

申请号：EP23175892.1

申请日：2023-05-29

Applicant: STMicroelectronics S.r.l.

Inventor： SEGHIZZI, Luca ,  VERCESI, Federico ,  LONGONI, Gianluca

IPC: H02K1/14 ,  H02K3/26 ,  H02K99/00 ,  H01F41/04 ,  H02K15/02

Abstract: A stator (1) for an electric actuator or motor, comprising: a solid body (20; 35); a ferromagnetic core region (8) between the layers of semiconductor material (24, 38), electrically insulated from said layers of semiconductor material (24, 38); a plurality of conductive through vias (14) through the solid body (20; 35); a first plurality of conductive strips (10), which extend parallel to one another above the core (8); and a second plurality of conductive strips (10), which extend parallel to one another above the core and opposite to the first plurality of conductive strips; wherein the first plurality of conductive strips (10), the plurality of conductive through vias (14), and the second plurality of conductive strips (10) form a winding or coil of the stator (1).

公开(公告)号：EP4155255A1

公开(公告)日：2023-03-29

申请号：EP22195564.4

申请日：2022-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： LONGONI, Gianluca ,  SEGHIZZI, Luca ,  NOMELLINI, Andrea

IPC: B81C1/00

Abstract: A process for manufacturing a MEMS device (101) including: forming a first sacrificial dielectric region (15) on a semiconductor wafer (4,6,10,12,14); forming a structural layer (25) of semiconductor material on the first sacrificial dielectric region (15); forming a plurality of first openings (35) through the structural layer (25), which laterally delimit at least one functional element (44, 46, 48) and give out onto the first sacrificial dielectric region (15); forming a second sacrificial dielectric region (57) on the structural layer (25) so as to close the first openings (35); forming a ceiling layer (75) of semiconductor material on the second sacrificial dielectric region (57); forming a plurality of second openings (77) through the ceiling layer (75); forming on the ceiling layer (77) a permeable layer (80) of polysilicon, which closes the second openings (77); selectively removing the first and the second sacrificial dielectric regions (15, 57) causing a gas to flow through the permeable layer (80) so as to release the functional element (44, 46, 48); and then forming on the permeable layer (80) a sealing layer (75) of semiconductor material.