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    그래핀 다중층의 제조방법
    91.
    发明公开
    그래핀 다중층의 제조방법 审中-实审
    制备多层石墨的方法

    公开(公告)号：KR1020120119789A

    公开(公告)日：2012-10-31

    申请号：KR1020110037983

    申请日：2011-04-22

    Applicant: 삼성전자주식회사

    Inventor： 우윤성 ,  최재영 ,  최원묵 ,  신현진 ,  윤선미

    IPC: C01B31/02 ,  C23C16/26 ,  B32B18/00 ,  H01B1/04

    CPC classification number: B32B37/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/02 ,  C01B2204/04 ,  H01L21/0272

    Abstract: PURPOSE: A manufacturing method of multiple graphene layers is provided to efficiently generate graphene of high density and to reduce defects in the graphene by directly forming the graphene on a substrate. CONSTITUTION: A manufacturing method of multiple graphene layers includes the following: a graphite-metal catalyst layer(14) is formed on a substrate(11); graphene(13) is formed on the graphite-metal catalyst layer; the graphite-metal catalyst layer forming process and the graphene forming process are repeated to form a stacked body of the graphite-metal catalyst layer and the graphene; and the graphite metal catalyst layer is removed from the stacked body.

    Abstract translation: 目的：提供多个石墨烯层的制造方法，以有效地产生高密度的石墨烯，并通过在基板上直接形成石墨烯来减少石墨烯中的缺陷。 构成：多个石墨烯层的制造方法包括以下：在基板（11）上形成石墨 - 金属催化剂层（14）; 石墨烯（13）形成在石墨 - 金属催化剂层上; 重复石墨 - 金属催化剂层形成工艺和石墨烯形成工艺以形成石墨 - 金属催化剂层和石墨烯的层叠体; 并且从堆叠体去除石墨金属催化剂层。

    ＣＮＴ 조성물, ＣＮＴ 막구조체, 액정표시장치, ＣＮＴ 막구조체의 제조방법 및 액정표시장치의 제조방법
    92.
    发明公开
    ＣＮＴ 조성물, ＣＮＴ 막구조체, 액정표시장치, ＣＮＴ 막구조체의 제조방법 및 액정표시장치의 제조방법 无效
    CNT组合物，CNT层结构，液晶显示装置，制备CNT层结构的方法和制备液晶显示装置的方法

    公开(公告)号：KR1020110126998A

    公开(公告)日：2011-11-24

    申请号：KR1020100046591

    申请日：2010-05-18

    Applicant: 삼성전자주식회사

    Inventor： 윤선미 ,  닝홍롱 ,  정창오 ,  최재영 ,  최원묵 ,  신현진

    IPC: B82B3/00 ,  C01B31/02

    CPC classification number: G02F1/13439 ,  B82Y10/00 ,  B82Y30/00 ,  C08L33/02 ,  Y10T428/1064 ,  C01B32/158 ,  B82B3/0009 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/06 ,  C01B2202/28

    Abstract: PURPOSE: A carbon nanotube composition, a carbon nanotube film structure, a liquid crystal display device, a method for manufacturing the carbon nanotube film structure, and a method for manufacturing the liquid crystal display device are provided to generate a chemical reaction between reactive functional groups and between a reactive functional group and a substrate by supplying external energy. CONSTITUTION: A carbon nanotube composition includes a dispersing agent with a reactive functional group and a dispersing medium. The reactive functional group includes polarity and includes at least one element selected from a group including C, H, O, N, S, and P. The dispersing medium includes first liquid and second liquid. The first liquid is hydrophilic property. The second liquid is mixed with the first liquid. A carbon nanotube film structure(120) includes a substrate and a carbon nanotube film stacked on the substrate.

    Abstract translation: 目的：提供碳纳米管组合物，碳纳米管膜结构，液晶显示装置，碳纳米管膜结构体的制造方法以及液晶显示装置的制造方法，以产生反应性官能团 并且通过提供外部能量在反应性官能团和基底之间。 构成：碳纳米管组合物包括具有反应性官能团的分散剂和分散介质。 反应性官能团包括极性，并且包括选自C，H，O，N，S和P中的至少一种元素。分散介质包括第一液体和第二液体。 第一液体具有亲水性。 第二液体与第一液体混合。 碳纳米管膜结构（120）包括基板和层叠在基板上的碳纳米管膜。

    박막 트랜지스터 및 이를 구비한 평판표시장치
    93.
    发明公开
    박막 트랜지스터 및 이를 구비한 평판표시장치 有权
    薄膜晶体管及其平板显示器

    公开(公告)号：KR1020110045252A

    公开(公告)日：2011-05-04

    申请号：KR1020090101727

    申请日：2009-10-26

    Applicant: 삼성전자주식회사

    Inventor： 최재영 ,  신현진 ,  윤선미

    IPC: H01L29/786

    CPC classification number: H01L29/78684 ,  H01L29/1606 ,  H01L29/78696

    Abstract: PURPOSE: A thin film transistor and flat panel display device with the same are provided to use a graphene layer as a semiconductor layer, thereby enhancing electrical features. CONSTITUTION: A substrate supports a thin film transistor. A semiconductor layer is composed of a graphene layer and a control layer. The size of grapheme is larger than 1 mm∧2. A metal atomic layer is interposed between the graphene layer and the control layer. A light emitting device is electrically connected to the thin film transistor.

    Abstract translation: 目的：提供一种薄膜晶体管及其平板显示装置，以使用石墨烯层作为半导体层，从而增强电气特性。 构成：衬底支撑薄膜晶体管。 半导体层由石墨烯层和控制层构成。 字形大小大于1 mm ^ 2。 金属原子层介于石墨烯层和控制层之间。 发光器件电连接到薄膜晶体管。

    나노도트 형성방법, 이 방법으로 형성된 나노도트를포함하는 메모리 소자 및 그 제조방법
    97.
    发明公开
    나노도트 형성방법, 이 방법으로 형성된 나노도트를포함하는 메모리 소자 및 그 제조방법 有权
    形成纳米片的方法，包含使用其形成的纳米片的存储器件及其制造方法

    公开(公告)号：KR1020090039229A

    公开(公告)日：2009-04-22

    申请号：KR1020070104734

    申请日：2007-10-17

    Applicant: 삼성전자주식회사

    Inventor： 최재영 ,  신현진 ,  윤선미

    IPC: H01L27/115 ,  H01L21/20 ,  B82Y10/00

    CPC classification number: H01L29/42332 ,  B82Y10/00 ,  G11C11/5671 ,  G11C2216/06 ,  H01L21/28273 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/7881 ,  Y10T428/26 ,  H01L21/28282

    Abstract: A method for forming a nano dot, a memory device using the same, and a manufacturing method thereof are provided to suppress diffusion of metal component by forming a graphene shell or a graphene layer on a surface of a metal nano dot. A metal nano dot(10) is prepared. Material of the metal nano dot is Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, or Zr. The metal nano dot has a function of a graphitization catalyst. A polymer corning process is performed(S1). A polymer(12) is coated on a surface of the metal nano dot. A thermal process about the metal nano dot including the polymer is performed under an inert atmosphere or a reducing atmosphere(S2). The polymer is thermally decomposed by the graphitization catalyst in the thermal process. A surface of the metal nano dot is covered with a graphene layer(14) or a graphene shell. A dot graphene shell is obtained by melting a metal component of the nano dot coated by the graphene layer with acid.

    Abstract translation: 提供一种形成纳米点的方法，使用其的存储装置及其制造方法，以通过在金属纳米点的表面上形成石墨烯壳或石墨烯层来抑制金属成分的扩散。 制备金属纳米点（10）。 金属纳米点的材料是Ni，Co，Fe，Pt，Au，Al，Cr，Cu，Mg，Mn，Mo，Rh，Si，Ta，Ti，W，U，V或Zr。 金属纳米点具有石墨化催化剂的功能。 进行聚合物胶化处理（S1）。 聚合物（12）涂覆在金属纳米点的表面上。 包括聚合物的金属纳米点的热处理在惰性气氛或还原气氛下进行（S2）。 聚合物在热处理中被石墨化催化剂热分解。 金属纳米点的表面被石墨烯层（14）或石墨烯壳覆盖。 通过用酸熔化由石墨烯层涂覆的纳米点的金属成分获得点状石墨烯壳。

    환원제를 이용하여 전자가 주입된 탄소 나노튜브와 그 제조방법 및 그를 이용한 전기 소자
    99.
    发明公开
    환원제를 이용하여 전자가 주입된 탄소 나노튜브와 그 제조방법 및 그를 이용한 전기 소자 失效
    由还原剂电子得到的碳纳米管，使用其制造和电气设备的方法

    公开(公告)号：KR1020090009422A

    公开(公告)日：2009-01-23

    申请号：KR1020070072673

    申请日：2007-07-20

    Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

    Inventor： 윤선미 ,  신현진 ,  최재영 ,  최성재 ,  이영희 ,  김기강

    IPC: B82B3/00 ,  B82Y40/00 ,  B82Y10/00

    CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/168 ,  H01L51/0048

    Abstract: A carbon nanotube(CNT) in which electronic is injected is provided to control easily doping of the carbon nanotube and electrical property such as band-gap etc. by diversifying treatment condition of reducing agent. A carbon nanotube(CNT) in which electronic is injected is generated using a reducing agent, and p-type doped CNT, neutral doped CNT, n-type doped CNT and a mixture thereof. An optical extinction rate of S11/S22 is 0.5 or greater. The reducing agent is a metal hydride, an organic reduction solvent or a hydrogen gas. The metal hydride is a borohydride system or an aluminum hydride. The organic reduction solvent is a hydrazine(N2H4), a glycol or a diol solvent.

    Abstract translation: 提供电子注入的碳纳米管（CNT），以通过使还原剂的处理条件多样化来控制碳纳米管的容易掺杂和带隙等电性能。 使用还原剂，p型掺杂CNT，中性掺杂CNT，n型掺杂CNT及其混合物来生成注入电子的碳纳米管（CNT）。 S11 / S22的光消光率为0.5以上。 还原剂是金属氢化物，有机还原溶剂或氢气。 金属氢化物是硼氢化物体系或氢化铝。 有机还原溶剂是肼（N 2 H 4），二醇或二醇溶剂。

    아민 화합물을 포함하는 탄소 나노튜브(ＣＮＴ) 박막 및 그제조방법
    100.
    发明公开
    아민 화합물을 포함하는 탄소 나노튜브(ＣＮＴ) 박막 및 그제조방법 失效
    碳纳米管（CNT）薄膜包含胺化合物及其制造方法

    公开(公告)号：KR1020080109197A

    公开(公告)日：2008-12-17

    申请号：KR1020070057236

    申请日：2007-06-12

    Applicant: 삼성전자주식회사

    Inventor： 신현진 ,  윤선미 ,  최재영 ,  최성재

    IPC: B82B3/00 ,  B82Y40/00

    CPC classification number: H01B1/04 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/28 ,  H01L51/0026 ,  H01L51/0049 ,  H01L51/0059

    Abstract: A carbon nanotube (CNT) composition containing an amine compound, a CNT thin film using the composition, a method for preparing the CNT thin film and a CNT electrode containing the thin film are provided to reduce the resistance of an electrode for improving electrical conductivity. A carbon nanotube composition containing an amine compound comprises a carbon nanotube; and an amine compound which is used as a dispersion solvent and has a boiling point less than 150 deg.C. Preferably the amine compound can be removed by heat treatment. Preferably the amine compound is butylamine, triethylamine or pyridine.

    Abstract translation: 提供含有胺化合物的碳纳米管（CNT）组合物，使用该组合物的CNT薄膜，制备CNT薄膜的方法和含有薄膜的CNT电极，以降低电极的电阻以提高导电性。 含有胺化合物的碳纳米管组合物包括碳纳米管; 和用作分散溶剂并且沸点低于150℃的胺化合物。 优选地，可以通过热处理除去胺化合物。 胺化合物优选为丁胺，三乙胺或吡啶。

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