公开(公告)号：US20050142687A1

公开(公告)日：2005-06-30

申请号：US11011898

申请日：2004-12-13

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: B81C1/00 ,  H01L21/00 ,  H01L29/84

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115

Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

Abstract translation: 微机械振动膜传感器的制造方法包括提供具有至少部分地位于隔膜下方的第一区域，隔膜和空腔的半导体基板。 在第一区域的至少一部分上方，在半导体衬底的表面中或表面上产生第二区域，第二区域的至少一部分被设置为十字形。 隔膜由沉积的密封层形成，并且包括至少一部分挡条。

公开(公告)号：US20050016949A1

公开(公告)日：2005-01-27

申请号：US10492009

申请日：2002-09-04

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  H01B13/00

CPC classification number: B81C1/00047 ,  B81C1/00246 ,  B81C2201/0115 ,  B81C2201/014

Abstract: A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.

Abstract translation: 提出了一种通过使用微系统技术的标准方法，能够简单且成本有效地在部件中产生具有光学透明壁的空腔的方法。 为此目的，首先制造出硅区域，其通过至少一个光学透明覆层在所有侧面上被包围。 然后在包层中产生至少一个开口。 在该开口上，由包覆层包围的硅被溶出，在包覆层内形成空腔。 在本文中，包覆层用作蚀刻阻挡层。

公开(公告)号：US06832523B2

公开(公告)日：2004-12-21

申请号：US10017772

申请日：2001-10-29

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: G01L100

CPC classification number: G01N25/68 ,  B81B3/0081 ,  B81B2203/0127 ,  B81C2201/0115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A micromechanical component having a substrate and a diaphragm positioned on the substrate. Underneath the diaphragm a region made of porous material is provided, which mechanically supports the diaphragm and thermally insulates it.

Abstract translation: 具有基板和位于基板上的隔膜的微机械部件。 在隔膜下方设置有由多孔材料制成的区域，该区域机械地支撑隔膜并将其热绝缘。

公开(公告)号：US20040212028A1

公开(公告)日：2004-10-28

申请号：US10852833

申请日：2004-05-24

Inventor： George M. Dougherty

IPC: H01L021/00 ,  H01L029/82

CPC classification number: B81C1/00158 ,  B01D67/0072 ,  B01D71/02 ,  B01D2323/10 ,  B01D2325/02 ,  B01D2325/04 ,  B81B2201/10 ,  B81C2201/0115 ,  B81C2201/017 ,  H01L21/28525 ,  H01L29/16

Abstract: A membrane structure comprising a silicon film having a grain structure including grains defining pores therebetween.

Abstract translation: 一种膜结构，其包括具有晶粒结构的硅膜，所述晶粒结构包括在其间限定孔的颗粒。

公开(公告)号：US20040188808A1

公开(公告)日：2004-09-30

申请号：US10742055

申请日：2003-12-18

Inventor： Hans Artmann ,  Thorsten Pannex ,  Hans-Peter Trah ,  Franz Laermer

IPC: H01L029/04

CPC classification number: C04B38/007 ,  B81C1/00492 ,  B81C2201/0115 ,  C04B2111/28 ,  C04B35/14

Abstract: A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described. In particular, in a porization of crystalline silicon, starting from an edge area of the region, the crystalline orientation of the silicon relative to the edge area is selected such that a thermal conductivity comes about along a direction perpendicular to the edge area that differs from, in particular is lower than, the thermal conductivity, that comes about in this direction in an otherwise analogous porization of crystalline silicon having a orientation or an equivalent orientation relative to this edge area.

Abstract translation: 具有多孔硅或多孔氧化硅区域的结构元件，其从至少大部分为晶体硅的区域的边缘区域开始从孔化获得。 相对于边缘区域，晶体硅具有取向不同于<100>取向的晶体取向或者由于对称原因等同的取向。 该结构元件适用于质量流量传感器，用于传感器和/或致动器结构或气体传感器的热解耦的部件。 此外，描述了用于设定结构元件的多孔硅或多孔氧化硅区域的热导率的方法。 特别地，在从区域的边缘区域开始的晶体硅的孔化中，选择硅相对于边缘区域的晶体取向，使得热导率沿垂直于与边缘区域不同的边缘区域的方向 ，特别是低于导热率，其在相对于该边缘区域具有<100>取向或等同取向的晶体硅的另外类似的孔化中在该方向上。

公开(公告)号：US20040147057A1

公开(公告)日：2004-07-29

申请号：US10473762

申请日：2004-03-30

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: H01L021/00

CPC classification number: B81C1/00047 ,  B81B2201/0278 ,  B81C2201/0115 ,  B81C2201/0139

Abstract: A method for manufacturing a semiconductor component (100; . . . ; 700), a multilayer semiconductor component in particular, preferably a micromechanical component, such as a heat transfer sensor in particular having a semiconductor substrate (101), in particular made of silicon, and a sensor region (404). For inexpensive manufacture of a thermal insulation between the semiconductor substrate (101) and the sensor region (404) a porous layer (104; 501) is provided in the semiconductor component (100; . . . ; 700).

Abstract translation: 一种用于制造半导体部件（100 ... ... 700）的方法，特别是多层半导体部件，优选微机械部件，例如特别是具有半导体衬底（101）的传热传感器，特别是由硅 ，和传感器区域（404）。 为了廉价地制造半导体衬底（101）和传感器区域（404）之间的绝热，在半导体部件（100 ... 700）中设置多孔层（104; 501）。

公开(公告)号：US20020170875A1

公开(公告)日：2002-11-21

申请号：US10070286

申请日：2002-07-08

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: C23F001/00

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

Abstract: A method is described for producing a semiconductor component (100; . . . ; 2200) particularly a multilayer semiconductor element, preferably a micromechanical component, particularly a pressure sensor, having a semiconductor substrate (101), particularly made of silicon, and a semiconductor component produced according to the method. In particular in order to reduce the production cost of such a semiconductor component, it is suggested that the method be refined so that in a first step a first porous layer (104; 1001; 1301) is produced in the semiconductor component, and in a second step a hollow or cavity (201; 1101; 1201; 1401; 2101; 2201) is produced under or from the first porous layer (104; 1001; 1301) in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract translation: 描述了用于制造半导体部件（100 ... 2200）的方法，特别是具有特别是由硅制成的半导体衬底（101）的多层半导体元件，优选微机械部件，特别是压力传感器，以及半导体 根据该方法生产的组分。 特别是为了降低这种半导体元件的制造成本，建议该方法被精炼，使得在第一步骤中，半导体元件中产生第一多孔层（104; 1001; 1301），并且在 第二步骤，在半导体部件中的第一多孔层（104; 1001; 1301）之下或之下制造中空或空腔（201; 1101; 1201; 1401; 2101; 2201），所述中空或空腔能够设置有 外部通道开口。

公开(公告)号：US20020045287A1

公开(公告)日：2002-04-18

申请号：US09881744

申请日：2001-06-18

Applicant: RANDOX LABORATORIES LIMITED

Inventor： Harold S. Gamble ,  S.J. Neil Mitchell ,  Andrzej Prochaska ,  Stephen Peter Fitzgerald

IPC: H01L021/00

CPC classification number: B81C1/00158 ,  B41J2/16 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1639 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0146

Abstract: A method of manufacturing a diaphragm utilizing a precision grinding technique after etching a cavity in a wafer. A technique for preventing distortion of the diaphragm based on use of a sacrificial layer of porous silicon is disclosed.

Abstract translation: 在蚀刻晶片中的空腔之后利用精密研磨技术制造隔膜的方法。 公开了一种基于使用多孔硅牺牲层防止隔膜变形的技术。

公开(公告)号：US5665250A

公开(公告)日：1997-09-09

申请号：US622877

申请日：1996-03-29

Applicant: Hitoshi Iwata ,  Makoto Murate

Inventor： Hitoshi Iwata ,  Makoto Murate

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L21/00

CPC classification number: B81C1/00047 ,  G01P15/0802 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0115 ,  G01P2015/0828 ,  Y10S438/96

Abstract: A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

Abstract translation: 表面型加速度传感器包括p型单晶硅基板，用作悬臂结构部分的悬臂和多个应变计。 悬臂设置在形成在p型单晶硅基板的正面上的凹部中，使得悬臂可以在向上和向下的方向上移位。 悬臂包括主要由n型单晶硅制成的外延生长层。 应变片由p型硅制成，并形成在悬臂的基端部的上表面上。

公开(公告)号：US3962052A

公开(公告)日：1976-06-08

申请号：US567656

申请日：1975-04-14

Applicant: Shakir A. Abbas ,  Robert C. Dockerty ,  Michael R. Poponiak

Inventor： Shakir A. Abbas ,  Robert C. Dockerty ,  Michael R. Poponiak

IPC: H01L21/306 ,  H01L21/3063 ,  H01L21/308 ,  C25F3/00

CPC classification number: B81C1/00087 ,  H01L21/3063 ,  H01L21/308 ,  B81C2201/0115 ,  Y10S438/924 ,  Y10S438/96

Abstract: A process for forming holes with precisely controlled dimension and position in monocrystalline silicon wafers wherein the holes are fabricated with vertical sides. In the preferred process, both sides of the silicon body are masked, opposite registered openings made in the masking layers, an impurity introduced through the openings into the body forming low resistivity regions, the body anodically etched through the openings until a porous silicon region is formed completely through the body, and subsequently removing the resultant porous silicon region with a silicon etchant.