Abstract:
Une source de particules chargées (14) produit un faisceau (20) qui est aligné sur une première plaque d'ouverture ayant une première ouverture (28). Le faisceau passant au travers est dévié par des plaques de déviation (32, 34, 38 et 40) par rapport à une seconde ouverture (46) dans une seconde plaque d'ouverture (44). L'image (50) de la seconde ouverture (46) est focalisée sur le porte-cible (16) et l'image virtuelle de l'empreinte (58) du faisceau dévié est focalisée sur le porte-cible (16) également. Lorsque ces image se chevauchent, un faisceau modelé (56) passe au travers. Le balayage par les plaques de déviation (52 et 54) du faisceau sur le porte-cible permet de produire par exposition des tracés (62) aux contours nets en positionnant l'image (60a) à l'intérieur de la marge (64) et puis en balayant l'image (50b) pour obtenir par exposition le contour net, et ensuite en captant l'image (60) de manière à balayer le tracé à produire par exposition.
Abstract:
이온 주입기의 분석기 모듈은 이온 빔의 말단 이온 빔 부분이 방출되는 분해 개구에 인접하게 배치된 빔 편향 장치를 포함한다. 빔 편향 장치는 제1 동작 상태에서 실질적으로 0볼트를 갖는 빔 편향 전압의 제1의 값에 응답하여, 소스 이온 빔 부분을 분해 개구로 향하게 하여 말단 이온 빔 부분을 생성시킨다. 빔 편향 전압이 제2 동작 상태에서 더 높은 제2의 값을 가질 때, 빔 편향 장치는 소스 이온 빔 부분을 분해 개구로부터 이탈하는 방향으로 향하게 하여 말단 이온 빔 부분이 소멸된다. 빔 제어 회로는 제2 동작 상태 중에 제2 빔 편향 전압을 제1 빔 편향 전압으로 신속하게 스위칭 하여 제2 동작 상태에서 제1 동작 상태로 전이되도록 동작한다. 주입 중에 발생된 글리치를 복구함에 있어 전술한 특징을 포함하는 주입 방식을 채용하면, 주입되는 웨이퍼의 수율이 향상된다.
Abstract:
In one embodiment, a charged particle beam writing apparatus includes a current limiting aperture, a blanking deflector switching between beam ON and beam OFF so as to control an irradiation time by deflecting the charged particle beam having passed through the current limiting aperture, a blanking aperture blocking the charged particle beam deflected by the blanking deflector in such a manner that the beam OFF state is entered, and an electron lens disposed between the current limiting aperture and the blanking aperture. A lens value set for the electron lens is substituted into a given function to calculate an offset time. The offset time is added to an irradiation time for writing a pattern to correct the irradiation time. The blanking deflector switches between the beam ON and the beam OFF based on the corrected irradiation time.
Abstract:
A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.
Abstract:
In one embodiment, a multi charged particle beam writing apparatus includes an emitter that emits a charged particle beam, an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings, a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams, a stage on which a substrate irradiated with the multiple beams, a detector that detects a reflection charged particle from the substrate, feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector, and aberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount.
Abstract:
A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.
Abstract:
An ozone supplying apparatus according to an embodiment of the present invention is an ozone gas supplying apparatus which supplies an ozone gas to a vacuum apparatus. The ozone supplying apparatus includes an ozone generator configured to generate the ozone gas, a first flow controller configured to control a flow rate of the ozone gas generated by the ozone generator, a second flow controller configured to control a flow rate of the ozone gas supplied to the vacuum apparatus, and a main pipe provided on a secondary side of the first flow controller and on a primary side of the second flow controller, with the ozone gas being introduced into the main pipe at such a flow rate that an internal pressure of the main pipe is controlled to be lower than atmospheric pressure by the first flow controller.
Abstract:
A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.